JPS5775031A - Gate circuit of thyristor - Google Patents

Gate circuit of thyristor

Info

Publication number
JPS5775031A
JPS5775031A JP15072880A JP15072880A JPS5775031A JP S5775031 A JPS5775031 A JP S5775031A JP 15072880 A JP15072880 A JP 15072880A JP 15072880 A JP15072880 A JP 15072880A JP S5775031 A JPS5775031 A JP S5775031A
Authority
JP
Japan
Prior art keywords
diodes
gate
thyristor
rise characteristic
gate circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15072880A
Other languages
Japanese (ja)
Inventor
Eiji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15072880A priority Critical patent/JPS5775031A/en
Publication of JPS5775031A publication Critical patent/JPS5775031A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To make the rise characteristic of the gate current uniform, by connecting diodes, which are formed on an N type plate, in series to the gate of a main thyristor. CONSTITUTION:Plural diodes 1 to increase the noise rating quantity are connected in series to the gate of a main thyristor 4. Since diodes formed on an N type substrate have a good rise characteristic, diodes formed on the N type substrate are used as diodes 1 to make the rise characteristic of the gate current uniform, and the variance of the ignition time is eliminated.
JP15072880A 1980-10-29 1980-10-29 Gate circuit of thyristor Pending JPS5775031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15072880A JPS5775031A (en) 1980-10-29 1980-10-29 Gate circuit of thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15072880A JPS5775031A (en) 1980-10-29 1980-10-29 Gate circuit of thyristor

Publications (1)

Publication Number Publication Date
JPS5775031A true JPS5775031A (en) 1982-05-11

Family

ID=15503106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15072880A Pending JPS5775031A (en) 1980-10-29 1980-10-29 Gate circuit of thyristor

Country Status (1)

Country Link
JP (1) JPS5775031A (en)

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