JPS5775475A - Magnetoresistance effect element - Google Patents

Magnetoresistance effect element

Info

Publication number
JPS5775475A
JPS5775475A JP55151804A JP15180480A JPS5775475A JP S5775475 A JPS5775475 A JP S5775475A JP 55151804 A JP55151804 A JP 55151804A JP 15180480 A JP15180480 A JP 15180480A JP S5775475 A JPS5775475 A JP S5775475A
Authority
JP
Japan
Prior art keywords
core
stripe
winding
bias
magnetoresistance effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55151804A
Other languages
Japanese (ja)
Other versions
JPH028468B2 (en
Inventor
Kaoru Toki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55151804A priority Critical patent/JPS5775475A/en
Publication of JPS5775475A publication Critical patent/JPS5775475A/en
Publication of JPH028468B2 publication Critical patent/JPH028468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To increase the regenerative sensitivity of a magnetoresistance effect element and to contrive the extension of element usage by a method wherein the magnetoresistance effect element and a high-magnetic permeability magnetic substance are contacted. CONSTITUTION:A plane having the fixed width GL gap of a core 7 consisting of a high-magnetic permeability magnetic substance filled with a nonmagnetic substance 6 is formed in flat plane and an MR stripe 1 having broader width W than width GL is formed on oblong shape to directly contact the side end of the stripe 1 with the core 7 at the opposite sides of the gap. The electric resistance value of the core 7 consisting of the high-magnetic permeability magnetic substance is made a value of one figure or more higher than the electric resistance of the MR strip 1. And a winding 8 is applied to the core 7 to flow a DC current into the winding 8 and a bias magnetic field is generated on the core 7 and an AC bias magnetic field is also generated by flowing an AC current into the winding 8. And the regenerative sensitivity of the MR stripe 1 is increased to expand element usage by forming the DC bias or AC bias magnetic field.
JP55151804A 1980-10-29 1980-10-29 Magnetoresistance effect element Granted JPS5775475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55151804A JPS5775475A (en) 1980-10-29 1980-10-29 Magnetoresistance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55151804A JPS5775475A (en) 1980-10-29 1980-10-29 Magnetoresistance effect element

Publications (2)

Publication Number Publication Date
JPS5775475A true JPS5775475A (en) 1982-05-12
JPH028468B2 JPH028468B2 (en) 1990-02-23

Family

ID=15526660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55151804A Granted JPS5775475A (en) 1980-10-29 1980-10-29 Magnetoresistance effect element

Country Status (1)

Country Link
JP (1) JPS5775475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0577775U (en) * 1991-04-12 1993-10-22 明子 稲木 Current detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130187A (en) * 1979-03-30 1980-10-08 Sony Corp Magnetoelectric transducer
JPS55134969A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130187A (en) * 1979-03-30 1980-10-08 Sony Corp Magnetoelectric transducer
JPS55134969A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0577775U (en) * 1991-04-12 1993-10-22 明子 稲木 Current detector

Also Published As

Publication number Publication date
JPH028468B2 (en) 1990-02-23

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