JPS5776542A - Material for forming pattern - Google Patents
Material for forming patternInfo
- Publication number
- JPS5776542A JPS5776542A JP15310780A JP15310780A JPS5776542A JP S5776542 A JPS5776542 A JP S5776542A JP 15310780 A JP15310780 A JP 15310780A JP 15310780 A JP15310780 A JP 15310780A JP S5776542 A JPS5776542 A JP S5776542A
- Authority
- JP
- Japan
- Prior art keywords
- org
- polymer substance
- peroxide
- copolymer
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
PURPOSE:To enhance the sensitivity of an org. polymer substance without deteriorating the superior resolving power, dry etching resistance, etc. by adding org. peroxide to the substance which increase the mol.wt. by cross-linking when irradiated. CONSTITUTION:Org. peroxide is added to an org. polymer substance which increases the mol.wt. by cross-linking when irradiated with ionized radiation such as electron beams, X-rays, ion beams, gamma-rays of neutron beams. The applied org. polymer substance is a homo- or copolymer having an allyl group in each polymn. repeating unit such as polydiallyl orthophthalate or polytriallyl cyanurate, or a styrene homo- or copolymer or a deriv. thereof such as polystyrene, acrylonitrile- styrene copolymer or halogenated polystyrene. The preferred amount of the org. peroxide added to the org. polymer substance is about 0.01-20%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15310780A JPS5776542A (en) | 1980-10-31 | 1980-10-31 | Material for forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15310780A JPS5776542A (en) | 1980-10-31 | 1980-10-31 | Material for forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776542A true JPS5776542A (en) | 1982-05-13 |
Family
ID=15555118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15310780A Pending JPS5776542A (en) | 1980-10-31 | 1980-10-31 | Material for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776542A (en) |
-
1980
- 1980-10-31 JP JP15310780A patent/JPS5776542A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO824165L (en) | PATTERNS OR ITS ELEMENTS OF POLYETHYL | |
| JPS574172A (en) | Light conductive member | |
| JPS5723694B2 (en) | ||
| JPS5776542A (en) | Material for forming pattern | |
| ATE9588T1 (en) | PROCESS FOR THE PREPARATION OF GRAFT COPOLYMERS BY RADIATION. | |
| EP0130088A3 (en) | Plasma developable negative resist compositions for electron beam, x-ray and optical lithography | |
| US3442780A (en) | Grafting of vinyl aromatic monomers onto polychlorotrifluoroethylene with irradiation | |
| JPS5786832A (en) | Pattern forming material | |
| JPS5518673A (en) | Ionized radiation sensitive negative type resist | |
| JPS5778529A (en) | Resist material | |
| JPS5684748A (en) | Radiation-resistant resin composition | |
| NO163189C (en) | COLLECTION COMPOSITION FOR PREVENTING SHALL PRESENT BY POLYMERIZATION OF AN ETHYLENIC Saturated MONOMER | |
| DE3060832D1 (en) | Colourable, peroxide curable chlorinated polymer composition | |
| JPS56110932A (en) | Compound for negative type resist | |
| JPS57159804A (en) | Radiation-sensitive organic high-molecular material | |
| JPS5260686A (en) | X-ray photoelectronic analysis | |
| OA06804A (en) | Highly sophisticated ionization section neutron accelerator tube. | |
| JPS5688134A (en) | Positive type resist | |
| DE68904421D1 (en) | CAULK. | |
| JPS5390358A (en) | Resin composition | |
| JPS5684731A (en) | Production of molding from flame-retarding high- molecular composition | |
| Bordes et al. | Eikonal corrections to hard processes | |
| JPS56147144A (en) | Negative type electron beam resist material | |
| Yamanouti et al. | 30a-GF-3 SCATTERING OF 24 MeV NEUTRONS FROM^< 58, 60> NI | |
| JPS5390766A (en) | Exposure method |