JPS5776821A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS5776821A
JPS5776821A JP15313880A JP15313880A JPS5776821A JP S5776821 A JPS5776821 A JP S5776821A JP 15313880 A JP15313880 A JP 15313880A JP 15313880 A JP15313880 A JP 15313880A JP S5776821 A JPS5776821 A JP S5776821A
Authority
JP
Japan
Prior art keywords
wafers
holding body
liquid phase
crucible
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15313880A
Other languages
English (en)
Inventor
Shinichi Kasahara
Toshihiro Suzuki
Kazuyuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15313880A priority Critical patent/JPS5776821A/ja
Publication of JPS5776821A publication Critical patent/JPS5776821A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15313880A 1980-10-31 1980-10-31 Liquid phase epitaxial growing method Pending JPS5776821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15313880A JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15313880A JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5776821A true JPS5776821A (en) 1982-05-14

Family

ID=15555831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15313880A Pending JPS5776821A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5776821A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231667B1 (en) * 1997-11-28 2001-05-15 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
US6338755B1 (en) * 1999-07-08 2002-01-15 The University Of Tokyo Method for producing a single crystalline member
US6802900B2 (en) 2000-12-28 2004-10-12 Canon Kabushiki Kaisha Liquid phase growth methods and liquid phase growth apparatus
JP2015006975A (ja) * 2013-05-27 2015-01-15 住友金属鉱山株式会社 窒化アルミニウム結晶の製造方法及び製造装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231667B1 (en) * 1997-11-28 2001-05-15 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
US6338755B1 (en) * 1999-07-08 2002-01-15 The University Of Tokyo Method for producing a single crystalline member
US6802900B2 (en) 2000-12-28 2004-10-12 Canon Kabushiki Kaisha Liquid phase growth methods and liquid phase growth apparatus
JP2015006975A (ja) * 2013-05-27 2015-01-15 住友金属鉱山株式会社 窒化アルミニウム結晶の製造方法及び製造装置

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