JPS5776831A - Liquid phase growing method - Google Patents
Liquid phase growing methodInfo
- Publication number
- JPS5776831A JPS5776831A JP15313780A JP15313780A JPS5776831A JP S5776831 A JPS5776831 A JP S5776831A JP 15313780 A JP15313780 A JP 15313780A JP 15313780 A JP15313780 A JP 15313780A JP S5776831 A JPS5776831 A JP S5776831A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- growth
- bottles
- growing
- blended
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To reduce the cost and to equalize the quality of solution based on a burning effect, by using the second solution having a replenishing composition in addition to the first growing solution, and reusing the growing solution whith has been used before. CONSTITUTION:Solution bottles in a plurality of lines on a growing boat are provided so that they can be divided by a separating pieces 4 of partitioning plate 3. In the botles 1-1'' in one line, the specified first solutionIfor growing is put. In the bottles 2-2'' in the other line, the second solution II with the replinishing composition which becomes the same composition as the solutionIwhen the solutionsI and II are blended after the growth of a crystal film by the solutionIis put. After the growth of the crystal film by the solutionI, the separating pieces 4 are operated, and the solutionsIand II are blended. When the second growth is performed, said blended liquid is heated to the growth starting temperature, the blended liquid is separated into the bottles 1-1'' and 2-2''. The second growth of the crystal film is performed by using the bottles 1-1''. The same procedure is repeated hereinager.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15313780A JPS5776831A (en) | 1980-10-31 | 1980-10-31 | Liquid phase growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15313780A JPS5776831A (en) | 1980-10-31 | 1980-10-31 | Liquid phase growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776831A true JPS5776831A (en) | 1982-05-14 |
Family
ID=15555807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15313780A Pending JPS5776831A (en) | 1980-10-31 | 1980-10-31 | Liquid phase growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776831A (en) |
-
1980
- 1980-10-31 JP JP15313780A patent/JPS5776831A/en active Pending
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