JPS5797621A - Boat for liquid phase epitaxial growth - Google Patents
Boat for liquid phase epitaxial growthInfo
- Publication number
- JPS5797621A JPS5797621A JP17602480A JP17602480A JPS5797621A JP S5797621 A JPS5797621 A JP S5797621A JP 17602480 A JP17602480 A JP 17602480A JP 17602480 A JP17602480 A JP 17602480A JP S5797621 A JPS5797621 A JP S5797621A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- slider
- melt liquid
- plate
- dividable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/066—Injection or centrifugal force system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To make a saturated Ga melt liquid to be distributed on substrates uniformly by a method wherein dividable plates to be divided on both sides respectively by sliding plates are provided between an upper chamber and a lower chamber. CONSTITUTION:The plate 12 dividable on both sides and the slider 6 are provided in the boat main body 1. The saturated Ga melt liquid 8 is filled up in the upper chamber 2, and the substrates 9 are provided in a holding device 10. The device 10 is provided in a middle chamber 3 separated by the plate 13 dividable on both sides and the slider 7. Then the plate 12 is separated by sliding the slider 6 leftward, and the melt liquid 8 drops in the chamber 3. Epitaxial growth is performed in this condition. When the slider 6 is transferred leftward moreover, the slider 7 slides, the plate 13 is divided, and the melt liquid 8 in the chamber 3 is accommodated in a drawer 5 in the chamber 4. Accordingly because the melt liquid 8 becomes as to be poured from the center of the substrates 9, uniform distribution can be attained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17602480A JPS5797621A (en) | 1980-12-10 | 1980-12-10 | Boat for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17602480A JPS5797621A (en) | 1980-12-10 | 1980-12-10 | Boat for liquid phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797621A true JPS5797621A (en) | 1982-06-17 |
Family
ID=16006384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17602480A Pending JPS5797621A (en) | 1980-12-10 | 1980-12-10 | Boat for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797621A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270818A (en) * | 1985-05-25 | 1986-12-01 | Mitsubishi Electric Corp | Liquid phase epitaxial growth equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380965A (en) * | 1976-12-27 | 1978-07-17 | Toshiba Corp | Liquid-phase growth method |
-
1980
- 1980-12-10 JP JP17602480A patent/JPS5797621A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380965A (en) * | 1976-12-27 | 1978-07-17 | Toshiba Corp | Liquid-phase growth method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270818A (en) * | 1985-05-25 | 1986-12-01 | Mitsubishi Electric Corp | Liquid phase epitaxial growth equipment |
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