JPS5776847A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776847A
JPS5776847A JP15311680A JP15311680A JPS5776847A JP S5776847 A JPS5776847 A JP S5776847A JP 15311680 A JP15311680 A JP 15311680A JP 15311680 A JP15311680 A JP 15311680A JP S5776847 A JPS5776847 A JP S5776847A
Authority
JP
Japan
Prior art keywords
mold substrate
substrate
repellency
fluorocarbon group
group gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15311680A
Other languages
Japanese (ja)
Inventor
Kazuaki Yamanochi
Hidetoshi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15311680A priority Critical patent/JPS5776847A/en
Publication of JPS5776847A publication Critical patent/JPS5776847A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To change the surface of a mold substrate into repellency by executing plasma treatment using a fluorocarbon group gas on the surface of the mold substrate. CONSTITUTION:The semiconductor devices 1 sealed in molds are placed in an etching tunnel 3 mounted into a reaction pipe 2, the fluorocarbon group gas is flowed into the reaction pipe 2, and adjusted at predetermined reaction pressure, and high-frequency voltage is applied to electrodes 4, 4' and the surface of the mold substrate is plasma-treated. Accordinly, the surface of the mold substrate 5 is exposed to the radicals of fluoric acid, fluorine is combined on the surface of the mold substrate 5, and the surface of the substrate is changed into repellency. Consequently, excellent reliability also to high temperature and humidity is obtained.
JP15311680A 1980-10-31 1980-10-31 Manufacture of semiconductor device Pending JPS5776847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15311680A JPS5776847A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15311680A JPS5776847A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776847A true JPS5776847A (en) 1982-05-14

Family

ID=15555313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15311680A Pending JPS5776847A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776847A (en)

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