JPS5776856A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5776856A JPS5776856A JP55152669A JP15266980A JPS5776856A JP S5776856 A JPS5776856 A JP S5776856A JP 55152669 A JP55152669 A JP 55152669A JP 15266980 A JP15266980 A JP 15266980A JP S5776856 A JPS5776856 A JP S5776856A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- layer
- oxide film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55152669A JPS5776856A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55152669A JPS5776856A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776856A true JPS5776856A (en) | 1982-05-14 |
Family
ID=15545502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55152669A Pending JPS5776856A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776856A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58194382A (ja) * | 1982-05-08 | 1983-11-12 | Matsushita Electric Ind Co Ltd | 発光装置用電極構体 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US5002898A (en) * | 1989-10-19 | 1991-03-26 | At&T Bell Laboratories | Integrated-circuit device isolation |
| US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
| US5432113A (en) * | 1992-08-04 | 1995-07-11 | Nippon Steel Corporation | Method of making a semiconductor memory device |
-
1980
- 1980-10-30 JP JP55152669A patent/JPS5776856A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58194382A (ja) * | 1982-05-08 | 1983-11-12 | Matsushita Electric Ind Co Ltd | 発光装置用電極構体 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US5002898A (en) * | 1989-10-19 | 1991-03-26 | At&T Bell Laboratories | Integrated-circuit device isolation |
| JPH03145730A (ja) * | 1989-10-19 | 1991-06-20 | American Teleph & Telegr Co <Att> | 集積回路半導体デバイスの製造方法 |
| US5432113A (en) * | 1992-08-04 | 1995-07-11 | Nippon Steel Corporation | Method of making a semiconductor memory device |
| US5338750A (en) * | 1992-11-27 | 1994-08-16 | Industrial Technology Research Institute | Fabrication method to produce pit-free polysilicon buffer local oxidation isolation |
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