JPS5776865A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776865A
JPS5776865A JP55153106A JP15310680A JPS5776865A JP S5776865 A JPS5776865 A JP S5776865A JP 55153106 A JP55153106 A JP 55153106A JP 15310680 A JP15310680 A JP 15310680A JP S5776865 A JPS5776865 A JP S5776865A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
film
thermal
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153106A
Other languages
English (en)
Inventor
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55153106A priority Critical patent/JPS5776865A/ja
Publication of JPS5776865A publication Critical patent/JPS5776865A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP55153106A 1980-10-31 1980-10-31 Manufacture of semiconductor device Pending JPS5776865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153106A JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153106A JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776865A true JPS5776865A (en) 1982-05-14

Family

ID=15555096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153106A Pending JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776865A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983537A (en) * 1986-12-29 1991-01-08 General Electric Company Method of making a buried oxide field isolation structure
US5422300A (en) * 1992-12-03 1995-06-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit
CN1050932C (zh) * 1994-07-06 2000-03-29 现代电子产业株式会社 半导体器件场氧化层的形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983537A (en) * 1986-12-29 1991-01-08 General Electric Company Method of making a buried oxide field isolation structure
US5422300A (en) * 1992-12-03 1995-06-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit
CN1050932C (zh) * 1994-07-06 2000-03-29 现代电子产业株式会社 半导体器件场氧化层的形成方法

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