JPS5776874A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5776874A
JPS5776874A JP55152119A JP15211980A JPS5776874A JP S5776874 A JPS5776874 A JP S5776874A JP 55152119 A JP55152119 A JP 55152119A JP 15211980 A JP15211980 A JP 15211980A JP S5776874 A JPS5776874 A JP S5776874A
Authority
JP
Japan
Prior art keywords
thyristor
positive bevel
junction plane
bevel
metal reinforcement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152119A
Other languages
Japanese (ja)
Inventor
Masato Ito
Sozaburo Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Denki Seizo KK, Toyo Electric Manufacturing Ltd filed Critical Toyo Denki Seizo KK
Priority to JP55152119A priority Critical patent/JPS5776874A/en
Publication of JPS5776874A publication Critical patent/JPS5776874A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To avoid formation of a chipped part when a positive bevel is formed on a side of a semiconductor substrate placed on a metal reinforcement by a method wherein a diameter of a junction plane of the metal reinforcement is slightly less than that of a junction plane of the semiconductor substrate after the positive bevel is formed. CONSTITUTION:A diameter of a junction plane of a metal reinforcement 11 which is joined to a thyristor 3 with soldering substance 2 is formed slightly less than that of a junction plane of the thyristor 3 after a positive bevel is formed and the bevel surface 3' of the thyristor 3 after the positive bevel is formed forms an angle alpha of not less than 90 deg. with the periphery of the metal reinforcement 11. Then abrasives G is blasted inthe direction A by a sand-blast method while the metal substrate 11 is being rotated and the positive bevel is formed on the periphery of the thyristor 3. With above method, the formation of the deficit portion on the thyristor, when the positive bevel is formed, is avoided.
JP55152119A 1980-10-31 1980-10-31 Semiconductor element Pending JPS5776874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152119A JPS5776874A (en) 1980-10-31 1980-10-31 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152119A JPS5776874A (en) 1980-10-31 1980-10-31 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5776874A true JPS5776874A (en) 1982-05-14

Family

ID=15533469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152119A Pending JPS5776874A (en) 1980-10-31 1980-10-31 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5776874A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151970A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Semiconductor device
FR2658662A1 (en) * 1990-02-22 1991-08-23 Mitsubishi Electric Corp PROCESS FOR PRODUCING A SEMICONDUCTOR DEVICE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940679A (en) * 1972-08-23 1974-04-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940679A (en) * 1972-08-23 1974-04-16

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151970A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Semiconductor device
FR2658662A1 (en) * 1990-02-22 1991-08-23 Mitsubishi Electric Corp PROCESS FOR PRODUCING A SEMICONDUCTOR DEVICE

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