JPS5776829A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS5776829A
JPS5776829A JP55153127A JP15312780A JPS5776829A JP S5776829 A JPS5776829 A JP S5776829A JP 55153127 A JP55153127 A JP 55153127A JP 15312780 A JP15312780 A JP 15312780A JP S5776829 A JPS5776829 A JP S5776829A
Authority
JP
Japan
Prior art keywords
single crystal
crystal silicon
substrate
film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153127A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55153127A priority Critical patent/JPS5776829A/en
Publication of JPS5776829A publication Critical patent/JPS5776829A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain the excellent substrate without degradation in mobility by removing the concave and convex parts of the entire surface of non-single crystal film on the semiconductor substrate caused by a laser spot by mechanical polishing or ion etching and flattening the surface. CONSTITUTION:A silicon oxide film 3 is formed on the surface of the single crystal silicon substrate 1, and a window part 2 is provided therein. Non-single crystal silicon 4 is formed on the surface of a film 3. Annealing is performed by the argon pulse laser spot 5 so that lines are overlapped by about 50%, respectively. Fine corundum powder 6 is placed on the surface of the non-single crystal silicon 4 which is melted by annealing and on which the concave and convex parts 4a and generated. Water is dropped on the surface and the polishing is performed so as to obtain film thickness of non-single crystal silicon 4 of about 1mum. In this method, the surface of the substrate is flattened highly accurately and the degradation of the mobility is not caused. Said flattening can be accomplished by the reactive ion etching.
JP55153127A 1980-10-31 1980-10-31 Manufacture of semiconductor substrate Pending JPS5776829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153127A JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153127A JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5776829A true JPS5776829A (en) 1982-05-14

Family

ID=15555565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153127A Pending JPS5776829A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5776829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61244019A (en) * 1985-04-22 1986-10-30 Agency Of Ind Science & Technol Method for processing fusion-recrystallized film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137979A (en) * 1976-05-14 1977-11-17 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137979A (en) * 1976-05-14 1977-11-17 Fujitsu Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61244019A (en) * 1985-04-22 1986-10-30 Agency Of Ind Science & Technol Method for processing fusion-recrystallized film

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