JPS5777093A - Synthesizing method for compound semiconductor - Google Patents

Synthesizing method for compound semiconductor

Info

Publication number
JPS5777093A
JPS5777093A JP55150808A JP15080880A JPS5777093A JP S5777093 A JPS5777093 A JP S5777093A JP 55150808 A JP55150808 A JP 55150808A JP 15080880 A JP15080880 A JP 15080880A JP S5777093 A JPS5777093 A JP S5777093A
Authority
JP
Japan
Prior art keywords
ampul
semiconductor
compound semiconductor
synthesized
constituent component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150808A
Other languages
Japanese (ja)
Inventor
Takao Yamamoto
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55150808A priority Critical patent/JPS5777093A/en
Publication of JPS5777093A publication Critical patent/JPS5777093A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To inexpensively obtain a semiconductor not polluted by Si by charging oxide of a constituent component of a compound semiconductor contg. P as a component into an ampul made of quartz glass together with the constituent components when the semiconductor is synthesized in the ampul.
CONSTITUTION: When a compound semiconductor contg. P as a constituent component such as InP or GaP is synthesized in an ampul made of quartz glass, oxide of one of the constituent component of the semiconductor such as In2O3 or P2O5 is charged into the ampul together with the components such as In and P. For example, when In2O3 is added, P is oxidized to form P2O5, and the partial pressure of gaseous P2O5 in the ampul is raised as if P2O5 is added, so that progress of the reaction of quartz with P represented by the equation is controlled. Accordingly, the formation of SiO2 is inhibited, and SiO2 is prevented from being taken in the synthesized compound from the vapor phase.
COPYRIGHT: (C)1982,JPO&Japio
JP55150808A 1980-10-29 1980-10-29 Synthesizing method for compound semiconductor Pending JPS5777093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150808A JPS5777093A (en) 1980-10-29 1980-10-29 Synthesizing method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150808A JPS5777093A (en) 1980-10-29 1980-10-29 Synthesizing method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5777093A true JPS5777093A (en) 1982-05-14

Family

ID=15504866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150808A Pending JPS5777093A (en) 1980-10-29 1980-10-29 Synthesizing method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5777093A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214003A (en) * 1989-05-31 1993-05-25 Nippon Mining Co., Ltd. Process for producing a uniform oxide layer on a compound semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5015470A (en) * 1973-06-07 1975-02-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5015470A (en) * 1973-06-07 1975-02-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214003A (en) * 1989-05-31 1993-05-25 Nippon Mining Co., Ltd. Process for producing a uniform oxide layer on a compound semiconductor substrate

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