JPS5777098A - Method and apparatus for growing znse in liquid phase - Google Patents

Method and apparatus for growing znse in liquid phase

Info

Publication number
JPS5777098A
JPS5777098A JP55149693A JP14969380A JPS5777098A JP S5777098 A JPS5777098 A JP S5777098A JP 55149693 A JP55149693 A JP 55149693A JP 14969380 A JP14969380 A JP 14969380A JP S5777098 A JPS5777098 A JP S5777098A
Authority
JP
Japan
Prior art keywords
section
crystal
znse
depositing
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55149693A
Other languages
Japanese (ja)
Other versions
JPS6128640B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP55149693A priority Critical patent/JPS5777098A/en
Publication of JPS5777098A publication Critical patent/JPS5777098A/en
Publication of JPS6128640B2 publication Critical patent/JPS6128640B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a high purity ZnSe crystal by using Se as a solvent, keeping a crystal depositing section and a source crystal section at different constant temps., and depositing a ZnSe crystal at the constant temp.
CONSTITUTION: A crystal depositing section 11 and a source crystal section 12 in a crucible made of quartz are kept at different constant temps., and a heating means capable of providing a temp. difference between the sections is set. Se 13 as a solvent is poured in the section 11, and ZnSe source crystals having a small grain size are put in the upper section 12. The crucible is then sealed at a high vacuum degree and placed in a heating furnace to keep the section 11 at about 800W900°C and the section 12 at about 850W950°C, and ZnSe crystal is deposited at the constant temp. Thus, a high purity ZnSe crystal is grown.
COPYRIGHT: (C)1982,JPO&Japio
JP55149693A 1980-10-24 1980-10-24 Method and apparatus for growing znse in liquid phase Granted JPS5777098A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55149693A JPS5777098A (en) 1980-10-24 1980-10-24 Method and apparatus for growing znse in liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55149693A JPS5777098A (en) 1980-10-24 1980-10-24 Method and apparatus for growing znse in liquid phase

Publications (2)

Publication Number Publication Date
JPS5777098A true JPS5777098A (en) 1982-05-14
JPS6128640B2 JPS6128640B2 (en) 1986-07-01

Family

ID=15480740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55149693A Granted JPS5777098A (en) 1980-10-24 1980-10-24 Method and apparatus for growing znse in liquid phase

Country Status (1)

Country Link
JP (1) JPS5777098A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
US4909998A (en) * 1982-06-24 1990-03-20 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
JP2009051322A (en) * 2007-08-24 2009-03-12 Yamaha Motor Co Ltd Motorcycle

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62157231U (en) * 1986-03-28 1987-10-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4909998A (en) * 1982-06-24 1990-03-20 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
US4968491A (en) * 1982-07-14 1990-11-06 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof
JP2009051322A (en) * 2007-08-24 2009-03-12 Yamaha Motor Co Ltd Motorcycle

Also Published As

Publication number Publication date
JPS6128640B2 (en) 1986-07-01

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