JPS5778132A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS5778132A
JPS5778132A JP15425380A JP15425380A JPS5778132A JP S5778132 A JPS5778132 A JP S5778132A JP 15425380 A JP15425380 A JP 15425380A JP 15425380 A JP15425380 A JP 15425380A JP S5778132 A JPS5778132 A JP S5778132A
Authority
JP
Japan
Prior art keywords
liquid
density
molten
maintained
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15425380A
Other languages
Japanese (ja)
Inventor
Toshiharu Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15425380A priority Critical patent/JPS5778132A/en
Publication of JPS5778132A publication Critical patent/JPS5778132A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a green LED of high performance by reducing the density of P in molten Ga-P contacted with a substrate at a growing step from a balanced density of solid phase deposition and increasing the density of N by the much. CONSTITUTION:Liquid temperature is heated to T7 in a balanced system of solid GaP and molten Ga-P liquid, the Ga-P liquid is maintained in unsaturated P state at the time t4, and NH3 is introduced thereto. The NH3 is reacted with Ga to produce GaN, and molten Ga-P liquid is dissolved in large quantity. After the system temperature is maintained at T7 for the prescribed time, cooling is started. Then, the N is doped in the grown epitaxial layer in high density. Or, the molten liquid atmosphere is reduced under pressed or is maintained in vacuum to evaporate the P to be feasibly evaporated, and the N is introduced instead. According to this configuration, the N can be added in high density with good controllability only in the light emitting region of the green LED of the GaP, thereby obtaining a green diode of high performance.
JP15425380A 1980-10-31 1980-10-31 Liquid phase epitaxial growing method Pending JPS5778132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15425380A JPS5778132A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15425380A JPS5778132A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5778132A true JPS5778132A (en) 1982-05-15

Family

ID=15580169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15425380A Pending JPS5778132A (en) 1980-10-31 1980-10-31 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5778132A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1439572A3 (en) * 2003-01-20 2008-03-26 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1972 *
NATIONAL TECHNICAL REPORT=1979 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1439572A3 (en) * 2003-01-20 2008-03-26 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate
US7524691B2 (en) 2003-01-20 2009-04-28 Panasonic Corporation Method of manufacturing group III nitride substrate

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