JPS5768014A - Manufacture of semiconductor single crystal film - Google Patents

Manufacture of semiconductor single crystal film

Info

Publication number
JPS5768014A
JPS5768014A JP55143623A JP14362380A JPS5768014A JP S5768014 A JPS5768014 A JP S5768014A JP 55143623 A JP55143623 A JP 55143623A JP 14362380 A JP14362380 A JP 14362380A JP S5768014 A JPS5768014 A JP S5768014A
Authority
JP
Japan
Prior art keywords
film
substrate
single crystal
alter
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55143623A
Other languages
Japanese (ja)
Inventor
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55143623A priority Critical patent/JPS5768014A/en
Publication of JPS5768014A publication Critical patent/JPS5768014A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a semiconductor film having less lattice defect density by injecting ions to the semiconductor film covered on an insulating single crystal substrate to remain the surface side of the film as the single crystal and to alter only the bottom to amorphous film, then emitting an energy beam of the degree so as not to melt the film, and epitaxially growing in solid phase the amorphous film from the surface side to the substrate side. CONSTITUTION:An Si single crystal film 2 is accumulated by a CVD method on an insulating single crystal substrate 1, e.g., sapphire or the like, ions are injected to the film 2 to alter the part contacting the substrate 1 on the bottom of the film 2 temporarily to amorphous film 3. At this time the substrate 1 is maintained at approx. 0 deg.C with Freon gas so as not to raise the temperature of the substrate 1. Thereafter, the film 2 retained from the surface side of the substrate 1 is emitted with Ar laser of the degree so as not to melt the film 2. The film 3 is epitaxially grown in solid phase from the film 2 to the surface of the substrate 1 to alter the film 3 to a single crystal film 4. In this manner, a semiconductor film having less crystal defect can be obtained on the substrate.
JP55143623A 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film Pending JPS5768014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55143623A JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55143623A JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Publications (1)

Publication Number Publication Date
JPS5768014A true JPS5768014A (en) 1982-04-26

Family

ID=15343051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55143623A Pending JPS5768014A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor single crystal film

Country Status (1)

Country Link
JP (1) JPS5768014A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
US7183229B2 (en) 2000-12-08 2007-02-27 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Similar Documents

Publication Publication Date Title
JPS6415912A (en) Semiconductor device
CA2055400A1 (en) Method of forming crystal
JPS56138917A (en) Vapor phase epitaxial growth
JPS5768014A (en) Manufacture of semiconductor single crystal film
JPS5493378A (en) Manufacture for semiconductor device
JPS571225A (en) Manufacture of semiconductor device
JPS57128092A (en) Imbedded type semiconductor laser device
JPS5745920A (en) Forming method for semiconductor single crystal by energy beam emission
GB2202371B (en) Semiconductor device
JPS5462777A (en) Production of compound semiconductor thin films
JPS57183091A (en) Manufacture of optical integrated circuit
JPS6439719A (en) Epitaxial growth
JPS575327A (en) Manufacture of semiconductor device
JPS5768015A (en) Manufacture of semiconductor device
JPS6430110A (en) Superconductor
JPS5344170A (en) Production of semiconductor device
JPS6427222A (en) Manufacture of thin single crystalline film
JPS5730364A (en) Manufacture of semiconductor device
JPS6428828A (en) Semiconductor device and manufacture thereof
JPS6489512A (en) Manufacture of single crystal silicon film
JPS6456424A (en) Production of organic film
JPS6430287A (en) Semiconductor laser device and manufacture thereof
JPS6421074A (en) Method for selectively growing thin metallic film
JPS6421986A (en) Manufacture of quantum fine line laser diode of current-injection type having buried structure
JPS54154269A (en) Liquid-phase growth method