JPS5778546A - Production of photoconductive silicon layer - Google Patents

Production of photoconductive silicon layer

Info

Publication number
JPS5778546A
JPS5778546A JP55154641A JP15464180A JPS5778546A JP S5778546 A JPS5778546 A JP S5778546A JP 55154641 A JP55154641 A JP 55154641A JP 15464180 A JP15464180 A JP 15464180A JP S5778546 A JPS5778546 A JP S5778546A
Authority
JP
Japan
Prior art keywords
sample
electric power
chamber
sih4
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55154641A
Other languages
Japanese (ja)
Other versions
JPS6237111B2 (en
Inventor
Kazuhisa Kato
Ko Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP55154641A priority Critical patent/JPS5778546A/en
Publication of JPS5778546A publication Critical patent/JPS5778546A/en
Publication of JPS6237111B2 publication Critical patent/JPS6237111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a silicon layer of high resistivity suited for an electrophotographic receptor by performing decomposition of a gaseous silicon compound by high frequency glow discharge by means of specific electric power densities and gas flow rates. CONSTITUTION:In a plasma CVD device, a sample 3 is heated to, for example, 200 deg.C with a heater 4, and is next decompressed down to 0.1 Pa (Pascal). Mixed gases of 10% SiH4 and 90% H2 are introduced into a chamber 1 at >=0.01mm.<-1> flow rates in ratio of total gas flow rate/chamber volume. When the flow rate and the degree of vacuum attains set values and stabilize, an RF electric power source is turned on. The RF electric power is set at >=0.3W/cm<2> with respect to the surface area (plasma generating side) of an electrode 2. Glow discharge takes place in the chamber and the decomposition of SiH4 initiates. When amorphous silicon is formed to prescribed thickness of the sample, the power source is switched off and the sample is removed.
JP55154641A 1980-11-05 1980-11-05 Production of photoconductive silicon layer Granted JPS5778546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154641A JPS5778546A (en) 1980-11-05 1980-11-05 Production of photoconductive silicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154641A JPS5778546A (en) 1980-11-05 1980-11-05 Production of photoconductive silicon layer

Publications (2)

Publication Number Publication Date
JPS5778546A true JPS5778546A (en) 1982-05-17
JPS6237111B2 JPS6237111B2 (en) 1987-08-11

Family

ID=15588648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154641A Granted JPS5778546A (en) 1980-11-05 1980-11-05 Production of photoconductive silicon layer

Country Status (1)

Country Link
JP (1) JPS5778546A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
DE3427826A1 (en) * 1983-07-27 1985-02-14 Stanley Electric Co. Ltd., Tokio/Tokyo SUBSTRATE FOR A PHOTO RECEPTOR MADE OF AMORPHIC SILICON
JPS6163022A (en) * 1984-09-04 1986-04-01 Ricoh Co Ltd Manufacture of amorphous semiconductor thin film
JPH01125530U (en) * 1988-05-12 1989-08-28
JPH0273978A (en) * 1988-09-08 1990-03-13 Sumitomo Electric Ind Ltd Formation of thin film
JPH02267272A (en) * 1989-04-06 1990-11-01 Sumitomo Electric Ind Ltd Thin film forming equipment
JPH02267273A (en) * 1989-04-06 1990-11-01 Sumitomo Electric Ind Ltd Thin film formation method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
DE3427826A1 (en) * 1983-07-27 1985-02-14 Stanley Electric Co. Ltd., Tokio/Tokyo SUBSTRATE FOR A PHOTO RECEPTOR MADE OF AMORPHIC SILICON
JPS6163022A (en) * 1984-09-04 1986-04-01 Ricoh Co Ltd Manufacture of amorphous semiconductor thin film
JPH01125530U (en) * 1988-05-12 1989-08-28
JPH0273978A (en) * 1988-09-08 1990-03-13 Sumitomo Electric Ind Ltd Formation of thin film
JPH02267272A (en) * 1989-04-06 1990-11-01 Sumitomo Electric Ind Ltd Thin film forming equipment
JPH02267273A (en) * 1989-04-06 1990-11-01 Sumitomo Electric Ind Ltd Thin film formation method

Also Published As

Publication number Publication date
JPS6237111B2 (en) 1987-08-11

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