JPS577895A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS577895A
JPS577895A JP7978680A JP7978680A JPS577895A JP S577895 A JPS577895 A JP S577895A JP 7978680 A JP7978680 A JP 7978680A JP 7978680 A JP7978680 A JP 7978680A JP S577895 A JPS577895 A JP S577895A
Authority
JP
Japan
Prior art keywords
crystal
capsuling
agent
liq
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7978680A
Other languages
Japanese (ja)
Inventor
Satao Yashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7978680A priority Critical patent/JPS577895A/en
Publication of JPS577895A publication Critical patent/JPS577895A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the formation of a polycrystal by wetting the inner wall of a crucible with a liq. capasuling agent before melting starting material when a crystal with high vapor pressure at the m.p. is manufactured by a liq. capsuling method.
CONSTITUTION: Starting material for a crystal with high vapor pressure at the m.p. such as polycrystalline GaP lumps is put into a crucible 11 internally wetted with a B2O3 capsuling agent 13, and the polycrystalline GaP is melted by heating while being covered with the capsuling agent 13. A seed crystal is then stuck to the melt 12 to pull up a single crystal 15 from the melt 12. By this method a crystal with less crystal devects is obtd., and the formation of a polycrstal is prevented.
COPYRIGHT: (C)1982,JPO&Japio
JP7978680A 1980-06-13 1980-06-13 Manufacture of single crystal Pending JPS577895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7978680A JPS577895A (en) 1980-06-13 1980-06-13 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7978680A JPS577895A (en) 1980-06-13 1980-06-13 Manufacture of single crystal

Publications (1)

Publication Number Publication Date
JPS577895A true JPS577895A (en) 1982-01-16

Family

ID=13699885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7978680A Pending JPS577895A (en) 1980-06-13 1980-06-13 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS577895A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131597A (en) * 1983-01-18 1984-07-28 Agency Of Ind Science & Technol Production of high-quality gallium arsenide single crystal
JPS6022308U (en) * 1983-07-20 1985-02-15 アロン化成株式会社 Core mold for injection molding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131597A (en) * 1983-01-18 1984-07-28 Agency Of Ind Science & Technol Production of high-quality gallium arsenide single crystal
JPS6022308U (en) * 1983-07-20 1985-02-15 アロン化成株式会社 Core mold for injection molding

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