JPS577956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577956A
JPS577956A JP8234180A JP8234180A JPS577956A JP S577956 A JPS577956 A JP S577956A JP 8234180 A JP8234180 A JP 8234180A JP 8234180 A JP8234180 A JP 8234180A JP S577956 A JPS577956 A JP S577956A
Authority
JP
Japan
Prior art keywords
layer
surface separating
type
diode
separating layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8234180A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8234180A priority Critical patent/JPS577956A/en
Publication of JPS577956A publication Critical patent/JPS577956A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a diode in which a depletion layer does not reach an ohmic layer even in a thin epitaxial layer by a method wherein a lower surface separating layer functioning as an anode of the diode is formed in a divided shape, and the N type epitaxial layer is grown. CONSTITUTION:The lower surface separating layers 15, 16, 17 made up in separated shapes are formed on an N type silicon substrate 5, the epitaxial layer 7 is made up, and side surface separating layers 9, 10 and the N<+> type ohmic layer 12 are built up. When inverse voltage is applied to the diode which uses the P type seprating layer as an anode and the N type epitaxial layer 7 as a cathode, the depletion layer 18 expands gradually to the epitaxial N layer 7, but expands along the side surface separating layers 9, 10 at first because the lower surface separating layers 15, 16, 17 are formed at intervals in the horizontal direction, and reaches the lower surface separating layer 16 and expands in the vertical direction. The depletion layer due to surge voltage does not reach the ohmic layer even in the thin epitaxial layer.
JP8234180A 1980-06-17 1980-06-17 Semiconductor device Pending JPS577956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8234180A JPS577956A (en) 1980-06-17 1980-06-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8234180A JPS577956A (en) 1980-06-17 1980-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577956A true JPS577956A (en) 1982-01-16

Family

ID=13771855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8234180A Pending JPS577956A (en) 1980-06-17 1980-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577956A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (en) * 1983-09-19 1985-04-13 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (en) * 1983-09-19 1985-04-13 Hitachi Ltd Semiconductor device

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