JPS5779623A - Formation of silicate glass film - Google Patents

Formation of silicate glass film

Info

Publication number
JPS5779623A
JPS5779623A JP55155361A JP15536180A JPS5779623A JP S5779623 A JPS5779623 A JP S5779623A JP 55155361 A JP55155361 A JP 55155361A JP 15536180 A JP15536180 A JP 15536180A JP S5779623 A JPS5779623 A JP S5779623A
Authority
JP
Japan
Prior art keywords
gas
flow
silicate glass
tube
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55155361A
Other languages
Japanese (ja)
Other versions
JPS629214B2 (en
Inventor
Shuichi Miyamoto
Yoshimi Shiotani
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55155361A priority Critical patent/JPS5779623A/en
Priority to EP81303829A priority patent/EP0047112B1/en
Priority to DE8181303829T priority patent/DE3173066D1/en
Publication of JPS5779623A publication Critical patent/JPS5779623A/en
Priority to US06/518,329 priority patent/US4513026A/en
Publication of JPS629214B2 publication Critical patent/JPS629214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make silicate glass films to grow stably on semiconductor substrates by a method wherein hydride gas is made to flow in from a gas feeding fine tube, and oxidizing gas is made to flow in from another gas feeding fine tube. CONSTITUTION:The silicon semiconductor substrates to be treated are arranged at the heat equalizing part in a reaction tube 1, hydride gas being mixed with monosilane and phosphine is made to flow from the gas feeding fine tube 4 into the reaction tube, oxygen gas is made to flow from the gas feeding fine tube 6 into the reaction tube, and moreover oxygen gas is made to flow in from a gas flow-in port 3 of the reaction tube 1, and the silicate glass films are made to grow on the semiconductor substrates. When the silicate glass film manufactured by this way is analyzed with a spectrum analyzer, no Si-H2 is contained therein, containment of phosphorus is uniform, and etching speed is also uniform being in proportion to the contents of phophorus.
JP55155361A 1980-08-29 1980-11-05 Formation of silicate glass film Granted JPS5779623A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55155361A JPS5779623A (en) 1980-11-05 1980-11-05 Formation of silicate glass film
EP81303829A EP0047112B1 (en) 1980-08-29 1981-08-21 Method of forming phosphosilicate glass films
DE8181303829T DE3173066D1 (en) 1980-08-29 1981-08-21 Method of forming phosphosilicate glass films
US06/518,329 US4513026A (en) 1980-08-29 1983-08-01 Method for coating a semiconductor device with a phosphosilicate glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155361A JPS5779623A (en) 1980-11-05 1980-11-05 Formation of silicate glass film

Publications (2)

Publication Number Publication Date
JPS5779623A true JPS5779623A (en) 1982-05-18
JPS629214B2 JPS629214B2 (en) 1987-02-27

Family

ID=15604225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155361A Granted JPS5779623A (en) 1980-08-29 1980-11-05 Formation of silicate glass film

Country Status (1)

Country Link
JP (1) JPS5779623A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat

Also Published As

Publication number Publication date
JPS629214B2 (en) 1987-02-27

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