JPS5779625A - Gettering of silicon wafer - Google Patents
Gettering of silicon waferInfo
- Publication number
- JPS5779625A JPS5779625A JP55156291A JP15629180A JPS5779625A JP S5779625 A JPS5779625 A JP S5779625A JP 55156291 A JP55156291 A JP 55156291A JP 15629180 A JP15629180 A JP 15629180A JP S5779625 A JPS5779625 A JP S5779625A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- plasma
- stacking faults
- treatment
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To collect stacking faults into etching damage and to reduce stacking faults of a silicon wafer by a method wherein plasma etching with CF4 is performed to the back of the silicon wafer. CONSTITUTION:Plasma etching with Freon gas is performed to the back of the silicon wafer to form etching damage within thickness of several hundred Angstrom , the factors of stacking faults are collected in the etching damage, and then the plasma cleaning treatment with oxygen gas for removal of contamination generated during the plasma treatment is performed. Accordingly the stacking faults in an oxide film generated by thermal oxidation are removed, characteristic of the wafer element is stabilized, and the treatment of the back of wafer with the plasma treatment is simplified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156291A JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156291A JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779625A true JPS5779625A (en) | 1982-05-18 |
Family
ID=15624593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55156291A Pending JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779625A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103348A (en) * | 1982-12-06 | 1984-06-14 | Toyota Central Res & Dev Lab Inc | Manufacture of semiconductor device |
| JPS6047426A (en) * | 1983-08-26 | 1985-03-14 | Komatsu Denshi Kinzoku Kk | Bsd-imparted semiconductor substrate |
| KR100405015B1 (en) * | 1999-09-10 | 2003-11-07 | 가부시끼가이샤 도시바 | A method of manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051665A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
-
1980
- 1980-11-05 JP JP55156291A patent/JPS5779625A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051665A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103348A (en) * | 1982-12-06 | 1984-06-14 | Toyota Central Res & Dev Lab Inc | Manufacture of semiconductor device |
| JPS6047426A (en) * | 1983-08-26 | 1985-03-14 | Komatsu Denshi Kinzoku Kk | Bsd-imparted semiconductor substrate |
| KR100405015B1 (en) * | 1999-09-10 | 2003-11-07 | 가부시끼가이샤 도시바 | A method of manufacturing semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE811531L (en) | Manufacturing a semiconductor device using a gas mixture | |
| JPS5779625A (en) | Gettering of silicon wafer | |
| JPS54161275A (en) | Etching method by gas containing hydrogen fluoride | |
| JPS57197827A (en) | Semiconductor substrate | |
| JPS5651580A (en) | Plasma etching method | |
| JPS5721825A (en) | Increasing method for gettering effect due to internal defect in semiconductor substrate | |
| JPS5513955A (en) | Method for forming thin insulation film | |
| JPS5544772A (en) | Manufacture of semiconductor | |
| JPS5754333A (en) | Semiconductor device and preparation thereof | |
| JPS57194547A (en) | Manufacture of semiconductor device | |
| JPS53111277A (en) | Semiconductor wafer and its fabricating method | |
| JPS57170536A (en) | Dry etching method | |
| JPS56105631A (en) | Electrode formation of semiconductor device | |
| JPS57138139A (en) | Etching method for insulating film of semiconductor device | |
| JPS56158443A (en) | Manufacture of semiconductor device | |
| JPS5691474A (en) | Manufacture of semiconductor memory | |
| JPS5515287A (en) | Manufacturing method of smeiconductor device | |
| JPS6481229A (en) | Manufacture of semiconductor device | |
| JPS54101273A (en) | Manufacture for semiconductor device | |
| JPS57102048A (en) | Manufacture of semiconductor device | |
| JPS5651579A (en) | Plasma etching method | |
| JPS56118367A (en) | Preparation of semiconductor device | |
| JPS5461867A (en) | Production of semiconductor wafer | |
| JPS5565438A (en) | Semiconductor substrate treatment | |
| JPS57204166A (en) | Manufacture of semiconductor device |