JPS5779626A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5779626A
JPS5779626A JP55156087A JP15608780A JPS5779626A JP S5779626 A JPS5779626 A JP S5779626A JP 55156087 A JP55156087 A JP 55156087A JP 15608780 A JP15608780 A JP 15608780A JP S5779626 A JPS5779626 A JP S5779626A
Authority
JP
Japan
Prior art keywords
metal plate
supporting metal
plate
stuck
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156087A
Other languages
Japanese (ja)
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156087A priority Critical patent/JPS5779626A/en
Publication of JPS5779626A publication Critical patent/JPS5779626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE:To make electric and thermal resistance characteristic of a semiconductor element satisfactory when a solder material metal is to be stuck on a supporting metal plate by a method wherein after the supporting metal plate is treated at a high temperature, the plate is held at a middle temperature and the solder material metal is stuck thereon. CONSTITUTION:The supporting metal plate 3 is heat-treated at first in a hydrogen atmospheric furnace of 600 deg.C or more, contamination and gas adhered inside and on the surface are removed, and then the plate is heated at 100-400 deg.C in a vacuum deposition furnace, an Al layer is formed on the surface thereof in condition wherein the grain boundary between crystal grains is extended as it is, the eutectic crystal 5 of aluminum silicon is made to generated, and the eutectic crystal thereof makes wetness to the supporting metal plate 3 to satisfactory to enable close adhesion. Accordingly adhesion between the wafer 1 and the supporting metal plate 3 is made satisfactorily, and electric and thermal characteristics are also enhanced.
JP55156087A 1980-11-05 1980-11-05 Manufacture of semiconductor element Pending JPS5779626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156087A JPS5779626A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156087A JPS5779626A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5779626A true JPS5779626A (en) 1982-05-18

Family

ID=15620012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156087A Pending JPS5779626A (en) 1980-11-05 1980-11-05 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5779626A (en)

Similar Documents

Publication Publication Date Title
JPS5477588A (en) Heat insulating single piece semiconductor die and method of producing same
JPS56142630A (en) Manufacture of semiconductor device
JPH03215670A (en) Substrate heater
JPS5530846A (en) Method for manufacturing fixed memory
JPS6456867A (en) Method for metallizing aln ceramic
JPS54155770A (en) Manufacture of semiconductor device
JPS6459866A (en) Manufacture of mos transistor
JPS5659694A (en) Manufacture of thin film
JPS5512752A (en) Semiconductor device manufacturing method
JPS5522863A (en) Manufacturing method for semiconductor device
JPS5795661A (en) Thin film semiconductor device
JPS5776832A (en) Method for forming palladium silicide
JPS54156473A (en) Protective film forming method for semiconductor substrate
JPS57166025A (en) Heat treatment method for compound semiconductor device
JPS6425409A (en) Junction formation of metallic silicide
JPS6473745A (en) Semiconductor device and manufacture thereof
JPS57107031A (en) Manufacture of semiconductor device
JPS54115070A (en) Manufacture for semiconductor element
JPS54113253A (en) Bonding method of semiconductor pellet
JPS5658241A (en) Manufacture of semiconductor device
JPS5651829A (en) Glassivating method for bevel-type semiconductor element
JPS6457625A (en) Manufacture of semiconductor device
JPS5483373A (en) Heating-up method of semiconductor substrate
JPS5624932A (en) Method of forming ohmic electrode on semiconductor of n type, 3-5 group compound in periodic table
JPS57169268A (en) Ohmic electrode material of n type 3-5 group compound semiconductor and formation of ohmic electrode therewith