JPS577963A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS577963A
JPS577963A JP8263080A JP8263080A JPS577963A JP S577963 A JPS577963 A JP S577963A JP 8263080 A JP8263080 A JP 8263080A JP 8263080 A JP8263080 A JP 8263080A JP S577963 A JPS577963 A JP S577963A
Authority
JP
Japan
Prior art keywords
diffusion region
impurity diffusion
charge transfer
type
transfer element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8263080A
Other languages
Japanese (ja)
Inventor
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8263080A priority Critical patent/JPS577963A/en
Publication of JPS577963A publication Critical patent/JPS577963A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enlarge the maximum charge transfer quantity of a charge transfer element by a method wherein a well of electric potential distribution in the condition existing no free electron is made as deep. CONSTITUTION:A p type impurity diffusion region 10 of the samely conductive type with a semiconductor substrate is formed on the whole surface of an n type impurity diffusion region 2 of the inversely conductive type to the substrate. Impurity concentration and thickness of the layer of the impurity diffusion region 10 is so instituted as when the impurity diffusion region 2 is in the minimum potential condition being completely depleted, namely in the minimum voltage in order to have no existence of free electron in the n type region 2, the impurity diffusion region 10 is to be depleted completely at the same time.
JP8263080A 1980-06-17 1980-06-17 Charge transfer element Pending JPS577963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8263080A JPS577963A (en) 1980-06-17 1980-06-17 Charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8263080A JPS577963A (en) 1980-06-17 1980-06-17 Charge transfer element

Publications (1)

Publication Number Publication Date
JPS577963A true JPS577963A (en) 1982-01-16

Family

ID=13779760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8263080A Pending JPS577963A (en) 1980-06-17 1980-06-17 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS577963A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137252A (en) * 1982-02-09 1983-08-15 Nec Corp charge transfer device
WO2006070598A1 (en) * 2004-12-28 2006-07-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137252A (en) * 1982-02-09 1983-08-15 Nec Corp charge transfer device
WO2006070598A1 (en) * 2004-12-28 2006-07-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing same
US7948048B2 (en) 2004-12-28 2011-05-24 Panasonic Corporation Semiconductor device and method for manufacturing same

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