JPS5779680A - Manufacture of silicon avalanche photodiode - Google Patents

Manufacture of silicon avalanche photodiode

Info

Publication number
JPS5779680A
JPS5779680A JP55156088A JP15608880A JPS5779680A JP S5779680 A JPS5779680 A JP S5779680A JP 55156088 A JP55156088 A JP 55156088A JP 15608880 A JP15608880 A JP 15608880A JP S5779680 A JPS5779680 A JP S5779680A
Authority
JP
Japan
Prior art keywords
type
layer
manufacture
covered
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156088A
Other languages
English (en)
Inventor
Seiichi Nagai
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156088A priority Critical patent/JPS5779680A/ja
Publication of JPS5779680A publication Critical patent/JPS5779680A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP55156088A 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode Pending JPS5779680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156088A JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156088A JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Publications (1)

Publication Number Publication Date
JPS5779680A true JPS5779680A (en) 1982-05-18

Family

ID=15620034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156088A Pending JPS5779680A (en) 1980-11-05 1980-11-05 Manufacture of silicon avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5779680A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606115A (en) * 1985-05-14 1986-08-19 Motorola, Inc. Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606115A (en) * 1985-05-14 1986-08-19 Motorola, Inc. Method of manufacturing optically sensitive semiconductor devices including anti-reflective coatings

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