JPS5779914A - Production of liquid crystal display cell - Google Patents
Production of liquid crystal display cellInfo
- Publication number
- JPS5779914A JPS5779914A JP15661980A JP15661980A JPS5779914A JP S5779914 A JPS5779914 A JP S5779914A JP 15661980 A JP15661980 A JP 15661980A JP 15661980 A JP15661980 A JP 15661980A JP S5779914 A JPS5779914 A JP S5779914A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- glass
- crystal display
- sio2 layer
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 238000010828 elution Methods 0.000 abstract 1
- 239000005361 soda-lime glass Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
PURPOSE:To prevent the degradation of a liquid crystal display device owing to the elution of alkaline components of glass and to extend its life by using a transparent substrate made for forming an SiO2 layer contg. a specific amt. of P2O5 and an SiO2 layer thereon on a glass substrate to specific or higher thicknesses. CONSTITUTION:An SiO2 layer 1b contg. 0.1-2wt% P2O5 is formed on a glass substrate 1a contg. alkaline components such as soda lime glass by immersing the glass 1a in a soln. of a silicic acid and a phosphoric acid then calcining the same. It is then immersed in a silicic acid soln., after which it is calcined, whereby an SiO2 layer 1c is formed on the layer 1b. The layers 1b, 1c are both formed to >=50Angstrom thicknesses. Transparent conductive patterns and orientation control films are formed respectively on two sheets of such substrates 1, and a liquid crystal is sealed between the two substrate, whereby the liquid crystal display cell is obtained. The degradation of the liquid crystal by the alkaline components eluted from the substrates 1a is prevented and the life is extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15661980A JPS5779914A (en) | 1980-11-07 | 1980-11-07 | Production of liquid crystal display cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15661980A JPS5779914A (en) | 1980-11-07 | 1980-11-07 | Production of liquid crystal display cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779914A true JPS5779914A (en) | 1982-05-19 |
Family
ID=15631671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15661980A Pending JPS5779914A (en) | 1980-11-07 | 1980-11-07 | Production of liquid crystal display cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779914A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
-
1980
- 1980-11-07 JP JP15661980A patent/JPS5779914A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
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