JPS5780717A - Diffusing method - Google Patents
Diffusing methodInfo
- Publication number
- JPS5780717A JPS5780717A JP55156670A JP15667080A JPS5780717A JP S5780717 A JPS5780717 A JP S5780717A JP 55156670 A JP55156670 A JP 55156670A JP 15667080 A JP15667080 A JP 15667080A JP S5780717 A JPS5780717 A JP S5780717A
- Authority
- JP
- Japan
- Prior art keywords
- nitrided
- substrate
- sih4
- maintained
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To prevent abnornal lateral diffusion of Zn when diffusing Zn to GaP or GaAsP by employing a mask formed by laminating a plurality of nitrided Si of different quality. CONSTITUTION:3%-SiH4 is branched by 1l with N2 as carrier, NH3 is flowed, is maintained at 1 Torr, an N type GaP substrate 6 is maintained at 320 deg.C to form the first layer 7a, the flow rate of SiH4 is lowered by approx. 10%, the second layer 7b is laminated, and Nitrided Si mask is formed. Then, the layers 7a, 7b are different in quality of films. The surface of the substrate is affected by stress due to the thermal expansion difference between the nitrided Si and the substrate by the abnormal diffusion of Zn to produce crystalline strain, and is produced due to large diffusing speed. Since the thermal expansions are cancelled by a plurality of laminated layers of different quality, it can prevent the lateral abnormal diffusion of Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156670A JPS5780717A (en) | 1980-11-06 | 1980-11-06 | Diffusing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156670A JPS5780717A (en) | 1980-11-06 | 1980-11-06 | Diffusing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780717A true JPS5780717A (en) | 1982-05-20 |
Family
ID=15632732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55156670A Pending JPS5780717A (en) | 1980-11-06 | 1980-11-06 | Diffusing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780717A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60233819A (en) * | 1984-05-04 | 1985-11-20 | Oki Electric Ind Co Ltd | Formation of diffused layer |
| JP4663813B2 (en) * | 2008-02-20 | 2011-04-06 | 裕 道脇 | Both screw body and female screw body |
-
1980
- 1980-11-06 JP JP55156670A patent/JPS5780717A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60233819A (en) * | 1984-05-04 | 1985-11-20 | Oki Electric Ind Co Ltd | Formation of diffused layer |
| JP4663813B2 (en) * | 2008-02-20 | 2011-04-06 | 裕 道脇 | Both screw body and female screw body |
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