JPS5780738A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPS5780738A
JPS5780738A JP55157188A JP15718880A JPS5780738A JP S5780738 A JPS5780738 A JP S5780738A JP 55157188 A JP55157188 A JP 55157188A JP 15718880 A JP15718880 A JP 15718880A JP S5780738 A JPS5780738 A JP S5780738A
Authority
JP
Japan
Prior art keywords
fuse
aluminum
film
thin part
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55157188A
Other languages
Japanese (ja)
Inventor
Ryuhei Miyagawa
Hiroyoshi Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55157188A priority Critical patent/JPS5780738A/en
Publication of JPS5780738A publication Critical patent/JPS5780738A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the structure of the final configuration of a semiconductor integrated circuit by depositing a thin aluminum film on an insulating film having a stepwise difference on a semiconductor substrate, welding the aluminum by an electric energy and breaking the brittle part. CONSTITUTION:A polysilicon layer 3 is superposed on an SiO2 2 on an Si substrate 1, and a hole is opened at the layer 3. Only the SiO2 2 are lightly etched to form a small overhang 7 at the bottom of the polysilicon 3. When a PSG 5 is covered and aluminum 6 is deposited, an extremely thin part 9 of aluminum film is formed. When a voltage of approx. 10 volts is applied in a pulse manner to the thin part 9, the thin part 9 can be readily molten and cut, and the protective film 4 on the aluminum film is not thermally broken. When an aluminum fuse thus composed is used, it does not deteriorate the effect of the protective film due to fusion of the fuse, but selectively melts the fuse, to fusion of the fuse, but selectively melts the fuse, thereby completing the final configuration of the circuit.
JP55157188A 1980-11-07 1980-11-07 Semiconductor integrated device Pending JPS5780738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55157188A JPS5780738A (en) 1980-11-07 1980-11-07 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55157188A JPS5780738A (en) 1980-11-07 1980-11-07 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
JPS5780738A true JPS5780738A (en) 1982-05-20

Family

ID=15644115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55157188A Pending JPS5780738A (en) 1980-11-07 1980-11-07 Semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS5780738A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344739A (en) * 1986-08-12 1988-02-25 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344739A (en) * 1986-08-12 1988-02-25 Fujitsu Ltd Manufacture of semiconductor device

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