JPS56146253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56146253A
JPS56146253A JP4920980A JP4920980A JPS56146253A JP S56146253 A JPS56146253 A JP S56146253A JP 4920980 A JP4920980 A JP 4920980A JP 4920980 A JP4920980 A JP 4920980A JP S56146253 A JPS56146253 A JP S56146253A
Authority
JP
Japan
Prior art keywords
film
bonding
hole
photoetching
piled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4920980A
Other languages
Japanese (ja)
Inventor
Mitsumasa Koyanagi
Naoki Yamamoto
Nobuo Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4920980A priority Critical patent/JPS56146253A/en
Publication of JPS56146253A publication Critical patent/JPS56146253A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a good bonding in low contact resistance by a method wherein a part of the upper electrode wiring is removed to form a contact formation region or a bonding region in a multilayer electrode wiring structure. CONSTITUTION:A MOS transistor is formed in an Si substrate 10, and a field oxide film 5 and a PSG film 7 are formed. Then, a contact hole is opened to alloy an Al film 20 and an SiO2 film 30 to be piled up. An Al electrode is formed by a photoetching to permit the PSG film or CVD-SiO2 film 40 to be piled up. Then, a hole 33 is formed in the PSG film 40 by the photoetching and the Si film 30 in the hole 33 is removed. The contact resistance at a time when the bonding 25 and the Al two- layered wiring are formed is reduced and the satisfactory bonding can be attained.
JP4920980A 1980-04-16 1980-04-16 Semiconductor device Pending JPS56146253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4920980A JPS56146253A (en) 1980-04-16 1980-04-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4920980A JPS56146253A (en) 1980-04-16 1980-04-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56146253A true JPS56146253A (en) 1981-11-13

Family

ID=12824580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4920980A Pending JPS56146253A (en) 1980-04-16 1980-04-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56146253A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01233739A (en) * 1988-03-14 1989-09-19 Hitachi Ltd Manufacture of semiconductor device
JPH02237135A (en) * 1989-03-10 1990-09-19 Fujitsu Ltd Manufacture of semiconductor device
JPH02312235A (en) * 1989-05-26 1990-12-27 Fujitsu Ltd Manufacture of semiconductor device
JP2008164408A (en) * 2006-12-28 2008-07-17 Yokogawa Electric Corp Electrical transmission mechanism and residual chlorine meter utilizing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984788A (en) * 1972-11-29 1974-08-14
JPS52155971A (en) * 1976-06-19 1977-12-24 Mitsubishi Electric Corp Electrode formation method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984788A (en) * 1972-11-29 1974-08-14
JPS52155971A (en) * 1976-06-19 1977-12-24 Mitsubishi Electric Corp Electrode formation method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01233739A (en) * 1988-03-14 1989-09-19 Hitachi Ltd Manufacture of semiconductor device
JPH02237135A (en) * 1989-03-10 1990-09-19 Fujitsu Ltd Manufacture of semiconductor device
JPH02312235A (en) * 1989-05-26 1990-12-27 Fujitsu Ltd Manufacture of semiconductor device
JP2008164408A (en) * 2006-12-28 2008-07-17 Yokogawa Electric Corp Electrical transmission mechanism and residual chlorine meter utilizing the same

Similar Documents

Publication Publication Date Title
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
JPS5745967A (en) Semiconductor device
JPS6421967A (en) Semiconductor device and manufacture thereof
JPS5658254A (en) Manufacture of mos type semiconductor memory device
JPS56161668A (en) Semiconductor device
JPS56146253A (en) Semiconductor device
JPS56164578A (en) Manufacture of mos type semiconductor device
JPS54141585A (en) Semiconductor integrated circuit device
JPS57100755A (en) Semiconductor device
JPS55113344A (en) Electrode wiring and its manufacture
JPS5571055A (en) Semiconductor device and its manufacturing method
JPS5512766A (en) Semiconductor device manufacturing method
JPS5649542A (en) Integrated circuit device of mos type
JPS6447075A (en) Semiconductor device
JPS55162270A (en) Semiconductor device
JPS57138160A (en) Formation of electrode
JPS57100725A (en) Semiconductor device
JPS5263069A (en) Semiconductor device
JPS6445147A (en) Semiconductor device
JPS558090A (en) Semiconductor device
JPS56164557A (en) Tin bump
JPS54162463A (en) Semiconductor device and its manufacture
JPS6472558A (en) Iii-v compound semiconductor device
JPS54162458A (en) Manufacture for semiconductor device
JPS5736865A (en) Semiconductor device