JPS5780754A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS5780754A
JPS5780754A JP55155923A JP15592380A JPS5780754A JP S5780754 A JPS5780754 A JP S5780754A JP 55155923 A JP55155923 A JP 55155923A JP 15592380 A JP15592380 A JP 15592380A JP S5780754 A JPS5780754 A JP S5780754A
Authority
JP
Japan
Prior art keywords
resistors
resistor
base diffusion
bias
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55155923A
Other languages
Japanese (ja)
Inventor
Akira Shibata
Kazuo Kondo
Koichi Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55155923A priority Critical patent/JPS5780754A/en
Publication of JPS5780754A publication Critical patent/JPS5780754A/en
Priority to US06/721,132 priority patent/US4689579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To largely rduce the capacity of an input coupling capacitor by using a resistor for supplying a DC bias as an ion injection resistor. CONSTITUTION:Resistors R1, R2 for supplying DC bias are used as ion injection resistors, the input resistance is remarkably increased, and the capacity of the input coupling capacitor 10 is decreased inversely proportional threto. The inconvenience when the input resistance is enhanced is the feasibility of the influence of the DC amplification factor hFE and the deterioration of the frequency characteristics due to mirror effect, but can be solved by driving a differential amplifier of transistors (TR) Q5, Q6 by emitter followers TRQ1, Q2. In this circuit, the resistances of the resistors R5-R7, R10 are small, and the base diffusion resistance is accordingly used. The resistor loads R8, R9 are necessarily formed in base diffusion. This is necessary because the resistors R6, R7 are base diffusion resistors to suppress the iregularity in the gain.
JP55155923A 1980-11-07 1980-11-07 Integrated circuit Pending JPS5780754A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55155923A JPS5780754A (en) 1980-11-07 1980-11-07 Integrated circuit
US06/721,132 US4689579A (en) 1980-11-07 1985-04-08 Analog integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155923A JPS5780754A (en) 1980-11-07 1980-11-07 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS5780754A true JPS5780754A (en) 1982-05-20

Family

ID=15616457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155923A Pending JPS5780754A (en) 1980-11-07 1980-11-07 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS5780754A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689579A (en) * 1980-11-07 1987-08-25 Hitachi, Ltd. Analog integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157060A (en) * 1974-06-07 1975-12-18
JPS5342576A (en) * 1976-09-29 1978-04-18 Nec Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157060A (en) * 1974-06-07 1975-12-18
JPS5342576A (en) * 1976-09-29 1978-04-18 Nec Corp Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689579A (en) * 1980-11-07 1987-08-25 Hitachi, Ltd. Analog integrated circuit

Similar Documents

Publication Publication Date Title
GB1453732A (en) Current mirror amplifiers
GB1276375A (en) Transistor differential amplifiers
JPS5760710A (en) Adjusting circuit for input bias of amplifier
GB1357092A (en) Differential amplifiers
JPS5780754A (en) Integrated circuit
SE8204839L (en) AUDIO FORSTER KARE
GB1506881A (en) Current divider
GB1411040A (en) High frequency amplifiers
GB1148416A (en) Dc amplifier
ES421791A1 (en) AN AMPLIFIER WITH HIGH INPUT IMPEDANCE.
JPS5646314A (en) Equalizing amplifier
GB849316A (en) Improvements in or relating to transistor amplifier circuits
GB1199540A (en) Circuit Arrangements Employing Complementary Pairs of Transistors.
GB1130060A (en) Improvements in and relating to electric amplifiers
JPS5552605A (en) Detector circuit
JPS5545215A (en) Transistor amplifier
GB1298126A (en) Amplifier arrangement
GB971308A (en) Improvements in or relating to a differential amplifier
JPS5267547A (en) Transistor amplifying circuit
JPS56161712A (en) Filter circuit
GB809207A (en) Improvements in and relating to transistor amplifiers
JPS6444110A (en) Amplifier
JPS5537072A (en) Semiconductor amplifier circuit device
JPS5660107A (en) Balanced differential feedback amplifier
JPS55115706A (en) Push pull amplifier