JPS5783059A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS5783059A
JPS5783059A JP55158548A JP15854880A JPS5783059A JP S5783059 A JPS5783059 A JP S5783059A JP 55158548 A JP55158548 A JP 55158548A JP 15854880 A JP15854880 A JP 15854880A JP S5783059 A JPS5783059 A JP S5783059A
Authority
JP
Japan
Prior art keywords
layer
implanted
channel region
polycrystalline
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55158548A
Other languages
Japanese (ja)
Other versions
JPS6244819B2 (en
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55158548A priority Critical patent/JPS5783059A/en
Publication of JPS5783059A publication Critical patent/JPS5783059A/en
Publication of JPS6244819B2 publication Critical patent/JPS6244819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To form the element of buried gate structure for the subject semiconductor device by a method wherein a semiconductor layer is provided on the substrate, on which a reverse conductive layer was formed on the surface, through the intermediary of an insulating film, and two kinds of ion implanting processes are performed using a channel region as a mask. CONSTITUTION:An oxide film 2 is provided on a P type substrate 1, and after an N<+> layer 3 has been implanted on the above, a P type polycrystalline Si layer 4 is laminated. Then, a resist mask 5 is provided in an expected channel region, a high density of oxygen, for example, is ion-implanted in the N<+> layer 3, and subsequently As, for example, is ion-implanted in the polycrystalline Si layer 4. Then, the mask 5 is removed, a heat-treatment is performed, a gate electrode 7 is formed by turning the oxygen implanted section into an SiO2 film, and at the same time, the As implanted section is activated to an N<+> type. Subsequently, a patterning is performed on the polycrystalline Si layer, and a self- matched channel region 8 is laid out on the source and drain regions 9 and 10 and the gate electrode 7. Through procedures, a buried gate structure can be formed microscopically.
JP55158548A 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device Granted JPS5783059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158548A JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158548A JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5783059A true JPS5783059A (en) 1982-05-24
JPS6244819B2 JPS6244819B2 (en) 1987-09-22

Family

ID=15674108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158548A Granted JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5783059A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182570A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
JPS63112124A (en) * 1986-10-31 1988-05-17 Nippon Zeon Co Ltd Reaction injection molding method
JPH05211166A (en) * 1991-12-02 1993-08-20 Nec Corp Thin film field-effect trasistor
WO2001097290A3 (en) * 2000-06-16 2002-08-15 Advanced Micro Devices Inc Buried inverted gate field-effect transistor (bigfet)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182570A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
JPS63112124A (en) * 1986-10-31 1988-05-17 Nippon Zeon Co Ltd Reaction injection molding method
JPH05211166A (en) * 1991-12-02 1993-08-20 Nec Corp Thin film field-effect trasistor
WO2001097290A3 (en) * 2000-06-16 2002-08-15 Advanced Micro Devices Inc Buried inverted gate field-effect transistor (bigfet)

Also Published As

Publication number Publication date
JPS6244819B2 (en) 1987-09-22

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