JPS5789253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5789253A
JPS5789253A JP55165509A JP16550980A JPS5789253A JP S5789253 A JPS5789253 A JP S5789253A JP 55165509 A JP55165509 A JP 55165509A JP 16550980 A JP16550980 A JP 16550980A JP S5789253 A JPS5789253 A JP S5789253A
Authority
JP
Japan
Prior art keywords
metal wiring
crystal
substrate
oxide film
punching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55165509A
Other languages
Japanese (ja)
Inventor
Toshihiko Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55165509A priority Critical patent/JPS5789253A/en
Publication of JPS5789253A publication Critical patent/JPS5789253A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To decrease punching through by providing a multi-crystal Si layer between metal wiring and a diffusion layer of an MOSFET. CONSTITUTION:A gate oxide film 103 is formed on an Si substrate having a field oxide film 102 and a source drain regions. And a multi-crystal Si electrode 104 is also formed and, through an interlayer insulation film 106, metal wiring 107 is formed. This decreases a stage difference preventing a short circuit due to a misfitting at the time of photo etching and also controls punching-through that short circuits the substrate and the metal wiring below it.
JP55165509A 1980-11-25 1980-11-25 Semiconductor device Pending JPS5789253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55165509A JPS5789253A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55165509A JPS5789253A (en) 1980-11-25 1980-11-25 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63291521A Division JPH01157571A (en) 1988-11-18 1988-11-18 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5789253A true JPS5789253A (en) 1982-06-03

Family

ID=15813739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55165509A Pending JPS5789253A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789253A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
US5668027A (en) * 1991-10-16 1997-09-16 Nippon Steel Semiconductor Corporation Method of manufacturing a MOS transistor semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5490979A (en) * 1978-12-11 1979-07-19 Agency Of Ind Science & Technol Integrated circuit
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device
JPS54102883A (en) * 1978-01-30 1979-08-13 Sony Corp Manufacture for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device
JPS54102883A (en) * 1978-01-30 1979-08-13 Sony Corp Manufacture for semiconductor device
JPS5490979A (en) * 1978-12-11 1979-07-19 Agency Of Ind Science & Technol Integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
US5668027A (en) * 1991-10-16 1997-09-16 Nippon Steel Semiconductor Corporation Method of manufacturing a MOS transistor semiconductor device

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