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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP10450575ApriorityCriticalpatent/JPS5228865A/en
Publication of JPS5228865ApublicationCriticalpatent/JPS5228865A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To prevent contamination of solution and to grow high quality epitxial GaAlAs layer by putting plate of GaAs under supporting block of the solution.
COPYRIGHT: (C)1977,JPO&Japio
JP10450575A1975-08-301975-08-30Process for multilayer epitaxial growth in liquid phase
PendingJPS5228865A
(en)