JPS5797672A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797672A
JPS5797672A JP55174224A JP17422480A JPS5797672A JP S5797672 A JPS5797672 A JP S5797672A JP 55174224 A JP55174224 A JP 55174224A JP 17422480 A JP17422480 A JP 17422480A JP S5797672 A JPS5797672 A JP S5797672A
Authority
JP
Japan
Prior art keywords
phosphor
doped polysilicon
contact part
impurities
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55174224A
Other languages
Japanese (ja)
Other versions
JPS641942B2 (en
Inventor
Toshiyuki Ishijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55174224A priority Critical patent/JPS5797672A/en
Publication of JPS5797672A publication Critical patent/JPS5797672A/en
Publication of JPS641942B2 publication Critical patent/JPS641942B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To level the surface of a semiconductor by growing a phosphor-doped polysilicon at a contact part and a gate electrode part. CONSTITUTION:After forming a separation region, source, drain and a gate oxide film, phosphor-doped polysilicon 37 is grown. Said phosphor-doped polysilicon is etched to grow a silicon dioxide film 42c on the surface excepting a contact part and a groove of gate electrode part. Next, hot resistance 43b is formed and being masked by said hot resistance the silicon dioxide film 42c of the contact part is removed followed by removing the hot resist 43b to perform aluminium wiring. Accordingly, after injecting the impurities into the drain region, the silicon surface can be levelled with no heat treatment to shorten the size of the gate with no change in the distribution of the impurities.
JP55174224A 1980-12-10 1980-12-10 Manufacture of semiconductor device Granted JPS5797672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55174224A JPS5797672A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55174224A JPS5797672A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5797672A true JPS5797672A (en) 1982-06-17
JPS641942B2 JPS641942B2 (en) 1989-01-13

Family

ID=15974888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55174224A Granted JPS5797672A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797672A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250486A (en) * 1996-03-08 1996-09-27 Semiconductor Energy Lab Co Ltd Semiconductor device
WO1998053492A1 (en) * 1997-05-20 1998-11-26 Advanced Micro Devices, Inc. Mofset in a trench and method of manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250486A (en) * 1996-03-08 1996-09-27 Semiconductor Energy Lab Co Ltd Semiconductor device
WO1998053492A1 (en) * 1997-05-20 1998-11-26 Advanced Micro Devices, Inc. Mofset in a trench and method of manufacture thereof
US5846862A (en) * 1997-05-20 1998-12-08 Advanced Micro Devices Semiconductor device having a vertical active region and method of manufacture thereof
US6323524B1 (en) 1997-05-20 2001-11-27 Advanced Micro Devices, Inc. Semiconductor device having a vertical active region and method of manufacture thereof

Also Published As

Publication number Publication date
JPS641942B2 (en) 1989-01-13

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