JPS58110038A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58110038A
JPS58110038A JP56208797A JP20879781A JPS58110038A JP S58110038 A JPS58110038 A JP S58110038A JP 56208797 A JP56208797 A JP 56208797A JP 20879781 A JP20879781 A JP 20879781A JP S58110038 A JPS58110038 A JP S58110038A
Authority
JP
Japan
Prior art keywords
etching
resist
silicon
etched
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56208797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542810B2 (2
Inventor
Shinji Matsui
真二 松井
Nobuhiro Endo
遠藤　伸裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56208797A priority Critical patent/JPS58110038A/ja
Publication of JPS58110038A publication Critical patent/JPS58110038A/ja
Publication of JPH0542810B2 publication Critical patent/JPH0542810B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56208797A 1981-12-23 1981-12-23 パタ−ン形成方法 Granted JPS58110038A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56208797A JPS58110038A (ja) 1981-12-23 1981-12-23 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56208797A JPS58110038A (ja) 1981-12-23 1981-12-23 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58110038A true JPS58110038A (ja) 1983-06-30
JPH0542810B2 JPH0542810B2 (2) 1993-06-29

Family

ID=16562271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56208797A Granted JPS58110038A (ja) 1981-12-23 1981-12-23 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58110038A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6125141A (ja) * 1984-07-16 1986-02-04 Tokyo Denshi Kagaku Kabushiki パターン形成方法
JPS62291119A (ja) * 1986-06-11 1987-12-17 Toray Ind Inc 半導体素子の製造方法
JPS6316623A (ja) * 1986-07-08 1988-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63140539A (ja) * 1986-12-02 1988-06-13 Nec Corp 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
JPS5649540A (en) * 1979-06-21 1981-05-06 Fujitsu Ltd Semiconductor device
JPS5858734A (ja) * 1981-05-07 1983-04-07 ハネウエル・インコ−ポレ−テツド 感度の高いポジ電子レジスト映像を発生する方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
JPS5649540A (en) * 1979-06-21 1981-05-06 Fujitsu Ltd Semiconductor device
JPS5858734A (ja) * 1981-05-07 1983-04-07 ハネウエル・インコ−ポレ−テツド 感度の高いポジ電子レジスト映像を発生する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6125141A (ja) * 1984-07-16 1986-02-04 Tokyo Denshi Kagaku Kabushiki パターン形成方法
JPS62291119A (ja) * 1986-06-11 1987-12-17 Toray Ind Inc 半導体素子の製造方法
JPS6316623A (ja) * 1986-07-08 1988-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63140539A (ja) * 1986-12-02 1988-06-13 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0542810B2 (2) 1993-06-29

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