JPS58111324A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58111324A
JPS58111324A JP56209219A JP20921981A JPS58111324A JP S58111324 A JPS58111324 A JP S58111324A JP 56209219 A JP56209219 A JP 56209219A JP 20921981 A JP20921981 A JP 20921981A JP S58111324 A JPS58111324 A JP S58111324A
Authority
JP
Japan
Prior art keywords
substrate
annealing
ion implantation
plasma
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209219A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451971B2 (2
Inventor
Nobuyoshi Kashu
夏秋　信義
Katsumi Tokikuchi
克己 登木口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56209219A priority Critical patent/JPS58111324A/ja
Publication of JPS58111324A publication Critical patent/JPS58111324A/ja
Publication of JPH0451971B2 publication Critical patent/JPH0451971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
JP56209219A 1981-12-25 1981-12-25 半導体装置の製造方法 Granted JPS58111324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209219A JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209219A JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58111324A true JPS58111324A (ja) 1983-07-02
JPH0451971B2 JPH0451971B2 (2) 1992-08-20

Family

ID=16569312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209219A Granted JPS58111324A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58111324A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4684319A (en) * 1985-01-29 1987-08-04 Toyota Jidosha Kabushiki Kaisha Turbocharger with variable nozzle mechanism
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH01111320A (ja) * 1987-10-26 1989-04-28 Matsushita Electric Ind Co Ltd 不純物の拡散方法
JP2005277220A (ja) * 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138921A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Method of formation for impurity introduction layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138921A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Method of formation for impurity introduction layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4684319A (en) * 1985-01-29 1987-08-04 Toyota Jidosha Kabushiki Kaisha Turbocharger with variable nozzle mechanism
JPS6362227A (ja) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Ｐ型ド−パントの特性のその他のｐ型ド−パントでの修正
JPH01111320A (ja) * 1987-10-26 1989-04-28 Matsushita Electric Ind Co Ltd 不純物の拡散方法
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法
JP2005277220A (ja) * 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置

Also Published As

Publication number Publication date
JPH0451971B2 (2) 1992-08-20

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