JPS5814535A - Purifying method for wafer - Google Patents

Purifying method for wafer

Info

Publication number
JPS5814535A
JPS5814535A JP56111882A JP11188281A JPS5814535A JP S5814535 A JPS5814535 A JP S5814535A JP 56111882 A JP56111882 A JP 56111882A JP 11188281 A JP11188281 A JP 11188281A JP S5814535 A JPS5814535 A JP S5814535A
Authority
JP
Japan
Prior art keywords
wafer
dust
electrode
plasma discharge
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56111882A
Other languages
Japanese (ja)
Other versions
JPH0732147B2 (en
Inventor
Naomichi Abe
阿部　直道
Moritaka Nakamura
守孝 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56111882A priority Critical patent/JPH0732147B2/en
Publication of JPS5814535A publication Critical patent/JPS5814535A/en
Publication of JPH0732147B2 publication Critical patent/JPH0732147B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only

Landscapes

  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To easily separate and remove unnecessary substances adhering to a wafer therefrom the charging them with electrons by plasma discharge. CONSTITUTION:A wafer 1 to which dust 2 adheres is placed on an electrode 4 coated with an insulator 5. Ar is introduced into a vessel 10 and exhausted therefrom, and plasma discharge is generated between the electrode 4 and an electrode 3 by a high-frequency power source 7. Then the dust 2 is charged with electrons. Next, when negative voltage is applied to the electrode 4 by a DC power source 9, the dust 2 is separated from the wafer 1, and thus the dust, which has been hard to remove in the conventional method, can be removed with ease.

Description

【発明の詳細な説明】 本始明はウェハ上に付着した不要物、即ちゴミをウェハ
から除く、ウェハの清浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer cleaning method for removing unnecessary matter, ie, dust, attached to the wafer from the wafer.

従来、ウェハ上のゴミを除去する方法としては、ウェハ
に窒素（１４）ガスを吹き付けてゴミを吹きとばす方法
があったが、ゴ（がウェハに対して静電的に付着してい
る場合にはこれを除去することが、かなシ因難であった
。Conventionally, the method of removing dust on a wafer was to blow nitrogen (14) gas onto the wafer to blow the dust away, but if the dust was electrostatically attached to the wafer, It was difficult to remove this.

本発明は、従来のこのような欠点を解決して静電的に付
着したゴミまでも除去し得る方法を提供することを目的
とする。かかる目的は１本発明によればウェハ上に付着
した不要物をプラズマ放電によシ帯電させ静電界により
ウェハから遊離させることにより４にされる。SUMMARY OF THE INVENTION An object of the present invention is to provide a method that can overcome these conventional drawbacks and remove even electrostatically attached dust. According to the present invention, such objects are achieved by electrifying unnecessary substances attached to the wafer by plasma discharge and releasing them from the wafer by an electrostatic field.

以下１図面を用いて本発明の一実施例を説明するＯ 図は本発明の冥施例を適用した装置を示す断面図である
。An embodiment of the present invention will be described below with reference to one drawing. The drawing is a sectional view showing an apparatus to which a second embodiment of the present invention is applied.

ウェハｌにはゴミ２が付着しておシ、このウニ／−１は
電極３と番の間で、テフロン等の絶縁物５で頒覆された
電極４上にｌ１ｌｃＩｉｃされているＯ電極番には直流
カット用のコンデンサ６とｌｓＬ５６ＭＨｚの高周波電
源）の直列回路と、高周波カット用のチ嘗−クコイル８
と直流電源９の直列回路とが並列接続されて接地されて
いる。電極３も接地されている。There is dust 2 attached to the wafer l, and this sea urchin/-1 is attached to the O electrode number l1lcIic on the electrode 4, which is covered with an insulator 5 such as Teflon, between the electrode 3 and the number. is a series circuit of a capacitor 6 for DC cut and a high frequency power supply of lsL56MHz), and a check coil 8 for high frequency cut.
and the series circuit of the DC power supply 9 are connected in parallel and grounded. Electrode 3 is also grounded.

電極３．４やウニノ１１を収容する容器１０にはアルゴ
ン（ムｒ）ガスが尋人、排気されている。ここで、高周
波電源７により゛鴫極３．４間でプラズマ放電させると
、ゴミ２は一子により帯電する。Argon gas is evacuated into the container 10 that houses the electrodes 3.4 and the unit 11. Here, when plasma discharge is caused between the electrodes 3 and 4 by the high frequency power source 7, the dust 2 is charged by a single charge.

次いで直流電ｇＡ９によ〉電極１に負の直ｆＬ％圧を印
加するとクーロン反発によシボξ２はウェハから遊離す
る。これにより、従来除去することが―かしかったゴミ
も容易に除去することができる。Next, when a negative direct current fL% pressure is applied to the electrode 1 using a direct current gA9, the grain ξ2 is released from the wafer due to Coulomb repulsion. This makes it possible to easily remove dust that was previously difficult to remove.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例を説明するための図である。 １：　ウェハ　　２：　ゴミ（不要物）、３．４：　　
電　極、　　フ：　高周波電源、９：　直流＃ｌｔ源The figure is a diagram for explaining one embodiment of the present invention. 1: Wafer 2: Garbage (unnecessary material), 3.4:
Electrode, F: High frequency power supply, 9: DC #lt source

Claims (1)

【特許請求の範囲】[Claims] ウェハ上に付着した不要物をプラズマ放電によ）帯電さ
せ静電界によりウェハから遊離させることを特徴とする
ウェハの清浄方法。A wafer cleaning method characterized by charging unnecessary substances attached to the wafer (by plasma discharge) and releasing them from the wafer by an electrostatic field.
JP56111882A 1981-07-17 1981-07-17 Wafer cleaning method Expired - Lifetime JPH0732147B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56111882A JPH0732147B2 (en) 1981-07-17 1981-07-17 Wafer cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111882A JPH0732147B2 (en) 1981-07-17 1981-07-17 Wafer cleaning method

Publications (2)

Publication Number Publication Date
JPS5814535A true JPS5814535A (en) 1983-01-27
JPH0732147B2 JPH0732147B2 (en) 1995-04-10

Family

ID=14572511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111882A Expired - Lifetime JPH0732147B2 (en) 1981-07-17 1981-07-17 Wafer cleaning method

Country Status (1)

Country Link
JP (1) JPH0732147B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154621A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Vacuum treatment
JPH03153885A (en) * 1989-09-26 1991-07-01 Applied Materials Inc Method and device for reducing contamination of wafer particle
US5328555A (en) * 1992-11-24 1994-07-12 Applied Materials, Inc. Reducing particulate contamination during semiconductor device processing
JP2007266261A (en) * 2006-03-28 2007-10-11 Tokyo Electron Ltd Transport pick, transport apparatus, substrate processing apparatus, and transport pick cleaning method
JP2011097068A (en) * 2003-08-25 2011-05-12 Tokyo Electron Ltd Method of cleaning member in vacuum processing chamber and substrate processing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384563A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Thin film pattern forming method
JPS53124445A (en) * 1974-01-22 1978-10-30 Canon Inc Developing fluid removing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53124445A (en) * 1974-01-22 1978-10-30 Canon Inc Developing fluid removing method
JPS5384563A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Thin film pattern forming method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154621A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Vacuum treatment
JPH03153885A (en) * 1989-09-26 1991-07-01 Applied Materials Inc Method and device for reducing contamination of wafer particle
US5328555A (en) * 1992-11-24 1994-07-12 Applied Materials, Inc. Reducing particulate contamination during semiconductor device processing
JP2011097068A (en) * 2003-08-25 2011-05-12 Tokyo Electron Ltd Method of cleaning member in vacuum processing chamber and substrate processing apparatus
JP2007266261A (en) * 2006-03-28 2007-10-11 Tokyo Electron Ltd Transport pick, transport apparatus, substrate processing apparatus, and transport pick cleaning method

Also Published As

Publication number Publication date
JPH0732147B2 (en) 1995-04-10

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