JPS58147033A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58147033A
JPS58147033A JP57028765A JP2876582A JPS58147033A JP S58147033 A JPS58147033 A JP S58147033A JP 57028765 A JP57028765 A JP 57028765A JP 2876582 A JP2876582 A JP 2876582A JP S58147033 A JPS58147033 A JP S58147033A
Authority
JP
Japan
Prior art keywords
resist
layer
gas
pattern
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57028765A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234453B2 (da
Inventor
Hideo Akitani
秋谷　秀夫
Kazuo Hirata
一雄 平田
Yutaka Sakakibara
裕 榊原
Toyoki Kitayama
北山　豊樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57028765A priority Critical patent/JPS58147033A/ja
Publication of JPS58147033A publication Critical patent/JPS58147033A/ja
Publication of JPH0234453B2 publication Critical patent/JPH0234453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
JP57028765A 1982-02-26 1982-02-26 パタ−ン形成方法 Granted JPS58147033A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57028765A JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57028765A JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58147033A true JPS58147033A (ja) 1983-09-01
JPH0234453B2 JPH0234453B2 (da) 1990-08-03

Family

ID=12257495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57028765A Granted JPS58147033A (ja) 1982-02-26 1982-02-26 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58147033A (da)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263435A (ja) * 1984-06-11 1985-12-26 Rohm Co Ltd パタ−ニング方法
JPH01200628A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
JPH047829A (ja) * 1990-04-26 1992-01-13 Sony Corp 多層レジスト層のエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS56140351A (en) * 1980-04-04 1981-11-02 Fujitsu Ltd Formation of pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS56140351A (en) * 1980-04-04 1981-11-02 Fujitsu Ltd Formation of pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263435A (ja) * 1984-06-11 1985-12-26 Rohm Co Ltd パタ−ニング方法
JPH01200628A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
JPH047829A (ja) * 1990-04-26 1992-01-13 Sony Corp 多層レジスト層のエッチング方法

Also Published As

Publication number Publication date
JPH0234453B2 (da) 1990-08-03

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