JPS5816041A - High-tensile fine au alloy wire - Google Patents

High-tensile fine au alloy wire

Info

Publication number
JPS5816041A
JPS5816041A JP56110827A JP11082781A JPS5816041A JP S5816041 A JPS5816041 A JP S5816041A JP 56110827 A JP56110827 A JP 56110827A JP 11082781 A JP11082781 A JP 11082781A JP S5816041 A JPS5816041 A JP S5816041A
Authority
JP
Japan
Prior art keywords
wire
fine
strength
alloy
alloy wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56110827A
Other languages
Japanese (ja)
Other versions
JPS6026822B2 (en
Inventor
Naoyuki Hosoda
細田 直之
Tamotsu Mori
保 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP56110827A priority Critical patent/JPS6026822B2/en
Publication of JPS5816041A publication Critical patent/JPS5816041A/en
Publication of JPS6026822B2 publication Critical patent/JPS6026822B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Conductive Materials (AREA)

Abstract

PURPOSE:To enhance the strength of Au in the state of a fine wire by adding specified very small amounts of Ca and Si or Sn to Au. CONSTITUTION:In order to enhance the strength of a fine Au wire having <=0.05mm. diameter used as a lead wire of a semoconductor device, an Au alloy contg. 0.0003-0.0010% Ca and 0.0003-0.0050% Si and/or Sn is used as the material of the wire. The resulting fine Au alloy wire has higher strength and heat resistance than a fine pure Au wire, and it has superior performance as a lead wire of a semiconductor device.

Description

【発明の詳細な説明】 この発明は、特に断面直径がQ、051fiφ以下での
使用にも耐える高張力Au合金細線に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention particularly relates to a high tensile strength Au alloy fine wire that can withstand use with a cross-sectional diameter of Q, 051 fiφ or less.

従来より装飾用、あるいは半導体装置(トランジスタ、
IC,LSIなど)のリード線(基板と半導体素子との
結線に用いられる細線)用などとして金線が使用されて
いることは良く知られるところであるが、近年、装飾分
野においては多様化の面から、また半導体装置分野にお
いては、経済性、集積度の高密化、並びに接続の高速化
の面から、よシ細く(直径:0.05mφ以下)、かつ
より強度のある(切れづらい)金線の要望が強くなって
いる。
Traditionally, it has been used for decoration or semiconductor devices (transistors,
It is well known that gold wire is used for lead wires (thin wires used to connect substrates and semiconductor elements) for ICs, LSIs, etc., but in recent years, gold wire has become more diverse in the decorative field. In addition, in the field of semiconductor devices, thinner (diameter: 0.05 mφ or less) and stronger (harder to break) gold wire is used from the viewpoints of economy, higher integration density, and faster connection. There is a growing demand for

そこで、本発明者等は、上述のような観点から、直径:
0.05inφ以下の細線とした状態で、上記のような
使用分野で十分に使用に耐える高張力(高強度)をもっ
た金細線を得べく研究を行なった結果、Oa : 0.
0003〜0.0010 %を含有し、さらにSiおよ
びanのうちの1種または2種:O,OOO3〜0.0
050%を含有し、残りがAuと不可避不純物からなる
組成(以上重量%)を有するAu合金は、高張力(高強
度)および良好な伸線加工性を有し、したがって1.直
径を0.05.lφ以下の細線とした、状態で、十分に
使用に耐える高張力を示すという知見を得たのである。
Therefore, from the above-mentioned viewpoint, the present inventors determined that the diameter:
As a result of conducting research to obtain a thin gold wire with a diameter of 0.05 inφ or less that has high tensile strength (high strength) that can be used in the above-mentioned fields of use, we found that Oa: 0.
0003 to 0.0010%, and further contains one or two of Si and an: O, OOO3 to 0.0
050%, and the remainder consisting of Au and unavoidable impurities (weight percent) has high tensile strength (high strength) and good wire drawability, and thus has 1. Set the diameter to 0.05. They found that a thin wire with a diameter of 1φ or less exhibits a high tensile strength sufficient to withstand use.

この発明は、上記知見にもとづいてなされたものであっ
て、上記の通りに成分組成を限定したのは次に示す理由
によるものである。すなわち、種々の合金成分について
強度および耐熱性の面から実験を行なった結果、Oaと
、Siおよび/またはSnとを共存させた場合に、所望
の高強度(高張力)並びに耐熱性(特に300℃以下で
の軟化抑制)が得られ、かつ伸線加工性も良好であるこ
とが経験的に判明したのである。したがって、Ca、並
びにSi(および/またはSn)の含有量のいずれかが
上記の下限値未満、すなわちOa: 0.0003 %
未満、Si(および/またはSn): 0,0003%
未満でも所望の前記特性を確保することができず、一方
OaおよびSi(および/またはSn)のいずれかでも
上記の上限値、すなわちOa: 0.0010 %、 
Si(および/またはSn) : O,OO’50 %
を越えると、脆化が現われるようになると共に、電気抵
抗の増大をきたすようになることから、それぞれの含有
量を、Oa: 0.0003〜0.0010%、siお
よび/lたはSn:0.0003〜0.0050チと定
めたのである。
This invention was made based on the above findings, and the reason why the component composition was limited as described above is as follows. That is, as a result of experiments conducted on various alloy components from the viewpoint of strength and heat resistance, it was found that when Oa and Si and/or Sn coexist, desired high strength (high tensile strength) and heat resistance (especially 300 It has been empirically found that the wire can be suppressed from softening at temperatures below 30°F (°C) and has good wire drawability. Therefore, either the content of Ca or Si (and/or Sn) is less than the above lower limit, that is, Oa: 0.0003%
Less than, Si (and/or Sn): 0,0003%
If the content is less than 0.0010%, the desired characteristics cannot be ensured, and on the other hand, if either Oa or Si (and/or Sn) has the above upper limit, that is, Oa: 0.0010%,
Si (and/or Sn): O, OO'50%
If the content exceeds Oa: 0.0003 to 0.0010%, Si and /l or Sn: It was set at 0.0003 to 0.0050 chi.

つぎに、この発明のAu合金細線を実施例によシ実誰何 通常の溶解法によシそれぞれ第1表に示される成分組成
をもったAu合金溶湯を調製し、鋳造した後、公知の溝
型圧延機を用いて圧延し、引続いて線引加工を行なうこ
とによって直径: 0.02511φの本発明Au合金
細線1〜8をそれぞれ製造した。
Next, the Au alloy fine wire of the present invention was prepared by a conventional melting method according to an embodiment of the present invention, and a molten Au alloy having the composition shown in Table 1 was prepared and cast. Au alloy thin wires 1 to 8 of the present invention each having a diameter of 0.02511φ were manufactured by rolling using a groove type rolling mill and subsequently drawing.

ついで、この結果得られた本発明Au合金細線1〜8に
ついて引張試験を行ない、常温における破断強度および
伸び、さらに250℃に30秒保持直後の破断強度を測
定した。この測定結果を同直径の純金細線の同測定値と
ともに第1表に併せて示した。
Next, the resulting thin Au alloy wires 1 to 8 of the present invention were subjected to a tensile test, and the breaking strength and elongation at room temperature and the breaking strength immediately after being held at 250°C for 30 seconds were measured. These measurement results are shown in Table 1 together with the same measurement values for pure gold thin wires of the same diameter.

第1表に示される結果から、本発明Au合金細線1〜8
は、いずれも純金細線に比して高い強度(高張力)を有
し、かつ耐熱性も具備していることが明らかである。
From the results shown in Table 1, the Au alloy fine wires 1 to 8 of the present invention
It is clear that both have higher strength (higher tensile strength) than fine pure gold wire and also have heat resistance.

上述の□ように、この発明のAu合金細線は、高張力並
びに耐熱性を有しているので、多様化する装飾分野は勿
論のこと、半導体装置のリード線などとして使用した場
合にすぐれた性能を発揮するのである。
As mentioned above, the Au alloy thin wire of the present invention has high tensile strength and heat resistance, so it has excellent performance when used not only in the diversifying decorative field but also as lead wires for semiconductor devices. It demonstrates this.

出願人  三菱金属株式会社 代理人  富 、1)和 夫Applicant: Mitsubishi Metals Corporation Agent Tomi, 1) Kazuo

Claims (1)

【特許請求の範囲】[Claims] Oa : 0.0003〜0.0010%を含有し、さ
らにSlおよびSnのうちの1種または2種:O,0O
03〜0.0050%を含有し、残りがAuと不可避不
純物からなる組成(以上重量%)を有することを特徴と
する高張力Au合金細線。
Oa: Contains 0.0003 to 0.0010%, and further contains one or two of Sl and Sn: O, 0O
A high-tensile Au alloy thin wire characterized by having a composition (the above weight %) containing 0.03 to 0.0050%, and the remainder consisting of Au and unavoidable impurities.
JP56110827A 1981-07-17 1981-07-17 High tensile strength Au alloy thin wire Expired JPS6026822B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56110827A JPS6026822B2 (en) 1981-07-17 1981-07-17 High tensile strength Au alloy thin wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56110827A JPS6026822B2 (en) 1981-07-17 1981-07-17 High tensile strength Au alloy thin wire

Publications (2)

Publication Number Publication Date
JPS5816041A true JPS5816041A (en) 1983-01-29
JPS6026822B2 JPS6026822B2 (en) 1985-06-26

Family

ID=14545653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56110827A Expired JPS6026822B2 (en) 1981-07-17 1981-07-17 High tensile strength Au alloy thin wire

Country Status (1)

Country Link
JP (1) JPS6026822B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02170931A (en) * 1988-09-29 1990-07-02 Mitsubishi Metal Corp Fine gold-alloy wire for gold bump
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
JPH04304335A (en) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp Pure gold foil for noble metal card
JPH0770671A (en) * 1993-09-06 1995-03-14 Mitsubishi Materials Corp Gold ornament material hardened by alloying a small amount of components
JPH07316689A (en) * 1994-05-19 1995-12-05 Ishifuku Metal Ind Co Ltd High-purity hard gold material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02170931A (en) * 1988-09-29 1990-07-02 Mitsubishi Metal Corp Fine gold-alloy wire for gold bump
US4938923A (en) * 1989-04-28 1990-07-03 Takeshi Kujiraoka Gold wire for the bonding of a semiconductor device
JPH04304335A (en) * 1991-03-30 1992-10-27 Mitsubishi Materials Corp Pure gold foil for noble metal card
JPH0770671A (en) * 1993-09-06 1995-03-14 Mitsubishi Materials Corp Gold ornament material hardened by alloying a small amount of components
WO1995007367A1 (en) * 1993-09-06 1995-03-16 Mitsubishi Materials Corporation Golden ornament material hardened by alloying with minor components
JPH07316689A (en) * 1994-05-19 1995-12-05 Ishifuku Metal Ind Co Ltd High-purity hard gold material

Also Published As

Publication number Publication date
JPS6026822B2 (en) 1985-06-26

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