JPS58172010A - Capacitive reactance circuit - Google Patents

Capacitive reactance circuit

Info

Publication number
JPS58172010A
JPS58172010A JP57054822A JP5482282A JPS58172010A JP S58172010 A JPS58172010 A JP S58172010A JP 57054822 A JP57054822 A JP 57054822A JP 5482282 A JP5482282 A JP 5482282A JP S58172010 A JPS58172010 A JP S58172010A
Authority
JP
Japan
Prior art keywords
transistors
current
current source
pair
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57054822A
Other languages
Japanese (ja)
Other versions
JPH0348686B2 (en
Inventor
Kanji Tanaka
寛次 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP57054822A priority Critical patent/JPS58172010A/en
Publication of JPS58172010A publication Critical patent/JPS58172010A/en
Publication of JPH0348686B2 publication Critical patent/JPH0348686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/54Modifications of networks to reduce influence of variations of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/46One-port networks
    • H03H11/48One-port networks simulating reactances
    • H03H11/481Simulating capacitances
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/46One-port networks
    • H03H11/48One-port networks simulating reactances
    • H03H11/483Simulating capacitance multipliers

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To obtain capacitive reactance stable against fluctuations of temperature by using the 1st differential amplifier consisting of transistors (TR), a capacitance, and the 1st constant current source and the 2nd differential amplifier which is connected at bases to the 1st differential amplifier and has the 2nd constant current source. CONSTITUTION:A constant current source 13 is connected to the common emitter of the differential amplifying circuit consisting of common emitter TRs 10 and 11, a scamm-capacity capacitor C12 is connected between the collector and base of the TR10, and the current mirror circuit 19 consisting of a TR20 and a diode 21 is connected to the collectors TRs 10 and 11. To the common connection emitter of the differential amplifying circuit 14 consisting of TRs 15 and 16 connected at bases to the TRs 10 and 11 in common, a constant current source 17 is connected; and the TR15 is diode-connected and the current mirror circuit 22 consisting of a TR23 and a diode 24 is connected to the collectors of the TRs 15 and 16. When currents flowing from the current sources 13 and 17 are I and IE respectively, equivalent reactance viewed from a terminal 25 is Cx(I/IE) and a stable reactance circuit irrelevant to fluctuations of temperature is obtained.

Description

【発明の詳細な説明】 本発明は、大容量IJアクタンスをIC(集積回路)内
に等測的に形成する為の回路に関するもので、特に温度
変化に対して安定な容量リアクタンスを得んとするもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a circuit for isometrically forming a large-capacity IJ actance in an IC (integrated circuit). It is something to do.

音響機器等のIC化が盛んであるが、コイル等の誘導リ
アクタンスや大容量のコンデンサ等の容量リアクタンス
は、モノリシックIC内に組み込むことが出来ないので
、従来はICから接続ビンを出し、それに外付けするの
が一般的であった。
The use of ICs in audio equipment, etc. is popular, but inductive reactances such as coils and capacitive reactances such as large capacitors cannot be incorporated into monolithic ICs. It was common to attach

しかして、誘導リアクタンスについては、トランジスタ
や抵抗等のIC化が容易な回路素子を用いて等測的KI
C内に形成する技術が開発されており、現実KIC内に
組み込まれている例もあるが、大容量リアクタンスにつ
いては、末だIC化の例を見ない。
However, for inductive reactance, it is possible to calculate isometric KI using circuit elements such as transistors and resistors that can be easily integrated into ICs.
Technology has been developed to form a large-capacity reactance in a KIC, and there are examples of it being incorporated into an actual KIC, but there are no examples of large-capacity reactance being integrated into an IC.

ところで、第1図に示される如き容量リアクタンス回路
が、本発明と同一の出願人により出願されている。これ
は、エミッタが共通接続された第1及び第2トランジス
タ(1)及び(2)と、該第1トランジスタ(1)のコ
レクタ・ベース間に接続された容易KIC化が出来る小
容量コンデンサ(3)と、前記第1及び第2トランジス
タ(1)及び(2)のベース間に接続された抵抗と、前
記第1及び第2トランジスタ(1)及び(2)の共通エ
ミッタに接続された電流源(5)とを備えるもので、端
子(6)から見た場合に1等価的な大容量リアクタンス
を得ることが出来るものである。第1図の回路において
、端子(6)の電圧を”Os入力電流を11、コンデン
サ(Jに流れる電流を1、とすれば、第1トランジスタ
(1)のベース電EEe1  は、第2トランジスタ(
2)のベース電圧を基準(ただしRは抵抗(4)の抵抗
値) となり、入力電流11は、 11 m・1 ・gm+12    …………e拳・…
…    (2)(ただしgmは第1トランジスタ(1
)の相互コンダクタンス) となる。ところで一般的に第1トランジスタ(1)のコ
レクタ電流は、コンデンサ(3)K流れる電流よりも十
分に大であるので、第(2)式は 11寓・1−gm  ・・・・・・・・・・・・・・・
・・・・・・・・・・・・+2)トナル。また、コンデ
ンサ(3)に流れる電流12は、II (ただし、Cはコンデンサ(3)の容量リアクタンス、
ωは角周波数) となる。従って、第(1)、(2)及び(3)式から、
入力電流1啼は、 11厘          ・・・・・・・・・・・・
+41と表わすことが出来、これは第1図の回路が、第
2図に示す如く、抵抗値が1/gmの抵抗(7)と、容
量リアクタンスがR−gm−Cのコンデンサ(8)との
直列回路と等価であることを示している。第(4)式に
おける相互コンダクタンス(gm)は、更に第(5)式
の如く電q+51に流れる電流工の関数として示される
Incidentally, a capacitive reactance circuit as shown in FIG. 1 has been filed by the same applicant as the present invention. This consists of first and second transistors (1) and (2) whose emitters are commonly connected, and a small-capacity capacitor (3) connected between the collector and base of the first transistor (1) that can be easily converted into a KIC. ), a resistor connected between the bases of the first and second transistors (1) and (2), and a current source connected to a common emitter of the first and second transistors (1) and (2). (5), and can obtain a large capacitance reactance equivalent to one when viewed from the terminal (6). In the circuit shown in Fig. 1, if the voltage at the terminal (6) is ``Os'', the input current is 11, and the current flowing through the capacitor (J is 1), the base voltage EEe1 of the first transistor (1) is
The base voltage of 2) is the reference (R is the resistance value of resistor (4)), and the input current 11 is 11 m・1・gm+12 ……e fist・…
... (2) (where gm is the first transistor (1
) is the mutual conductance of ). By the way, the collector current of the first transistor (1) is generally sufficiently larger than the current flowing through the capacitor (3), so the equation (2) is expressed as 11/1-gm...・・・・・・・・・
・・・・・・・・・・・・+2) Tonal. Also, the current 12 flowing through the capacitor (3) is II (where C is the capacitive reactance of the capacitor (3),
ω is the angular frequency). Therefore, from equations (1), (2) and (3),
1 input current is 11 rin...
This can be expressed as +41, which means that the circuit shown in Figure 1 has a resistor (7) with a resistance value of 1/gm and a capacitor (8) with a capacitance reactance of R-gm-C, as shown in Figure 2. This shows that it is equivalent to a series circuit of The mutual conductance (gm) in Equation (4) is further expressed as a function of the current flowing in the electric current q+51 as shown in Equation (5).

2に7   4kT 従って、第(5)式より等価容量リアクタンスは、R’
 gm ” C富、 w T ’ R” C”工 ・・
・・・・・・・・・・  (6)となり、電流源(5)
に流れる電流工に比例したものとなる。それ故、前記電
流源(5)K流れる電流工を変化すれば、第1図の回路
は、可変容量りアクタンスともなる。
2 to 7 4kT Therefore, from equation (5), the equivalent capacitance reactance is R'
gm ” C wealth, w T' R” C” engineering...
・・・・・・・・・・・・ (6) becomes current source (5)
It is proportional to the electric current flowing through the area. Therefore, if the current flowing through the current source (5) is changed, the circuit of FIG. 1 becomes a variable capacitance or actance.

上述の如く、第1図の回路は、IC化の可能な素子のみ
の使用で等価容量リアクタンスを得ることが出来るので
、IC化の自由度が増すという便利なものであるが、I
の項が温度に対して不安定な為に、前記s1図の回路を
発振素子の並列容量として用いる場合には、発振周波数
の変動が生じる等の欠点を有していた。
As mentioned above, the circuit shown in Figure 1 is convenient because it can obtain equivalent capacitance reactance by using only elements that can be integrated into an IC, increasing the degree of freedom in integrating it into an IC.
Since the term is unstable with respect to temperature, when the circuit shown in the s1 diagram is used as a parallel capacitor of an oscillation element, it has the disadvantage that the oscillation frequency fluctuates.

本発明は、上述の点に@み成されたもので、以下実施例
に基づき、図面を参照しながら説明する。
The present invention has been achieved in the above points, and will be described below based on embodiments and with reference to the drawings.

第3図は本発明の一実施例を示すもので、(9)はエミ
ッタが共通、接続された第1及び第2トランジスタαG
及びaυから成る第1差動増幅回路、@は前記第1トラ
ンジスタ埠のコレクタ・ベース間に接続された小容量の
コンデンサ、1mは前記$1及び第2トランジスタfl
l及びαυの共通エミッタに接続された第1電流源、東
はダイオード接続され、そのベースが前記第1トランジ
スタα〔のベースに接続された第3トランジスタ0Sと
、ベースが前記第2トランジスタ(2)のベースに接続
された第4トランジスタ+IIとから成る第2差動増幅
回路、(lηは前記第3及び第4トランジスタu9及び
u19の共通エミッタに接続された1l12電流源、(
11は前記第2及び第4トランジスタα劾及びI19の
ベースに基準電圧を供給する為の定電圧源、りはPNP
 )ランジスタ(至)とダイオード(211とから成り
、第1及び第2トランジスタ+1(I及びfillのコ
レクタ電流を供給する為の第1電流ミラー回路、及び■
はPIP)ランジスタ(至)とダイオード(至)とから
成り、第3及び第4トランジスタ(社)及び(]eのコ
レクタ電流を供給する為の第2電流ミラー回路である。
FIG. 3 shows an embodiment of the present invention, in which (9) shows first and second transistors αG whose emitters are common and connected.
and aυ, @ is a small capacitor connected between the collector and base of the first transistor terminal, and 1m is the $1 and second transistor fl.
a first current source connected to the common emitter of l and αυ; ) a second differential amplifier circuit consisting of a fourth transistor +II connected to the base of the transistor +II, (lη is a 1l12 current source connected to the common emitter of said third and fourth transistors u9 and u19, (
11 is a constant voltage source for supplying a reference voltage to the bases of the second and fourth transistors α and I19;
) A transistor (to) and a diode (211), a first current mirror circuit for supplying the collector current of the first and second transistors +1 (I and fill, and
is a second current mirror circuit consisting of a PIP transistor (to) and a diode (to) for supplying the collector current of the third and fourth transistors and (]e.

しかして、j83図において、第3トランジスタ09の
ベース・エミッタ間の接合抵抗R1は、第2電流源11
ηの電流をxBとすれば、 となり、第4トランジスタα・のベース・エミッタ間の
接合抵抗RMも第(7)式の如くなる。従って、第3ト
ランジスタ(至)のベースから第4トランジスタ(ls
のベースを見た等価インピーダンスRzはとなり、前記
第(6)及び第(8)式から、第5図の回路における端
子−から見た等価容量りアクタンスは、となる。第(9
)式から明らかな如<、 11IS図に示される回路の
等価容量リアクタンスは、コンデンサα湯の容量Cと、
JIIN及び第2電流jlU及びa詐に流れる電流I及
び工Eの比jとによって決まり、晶という要素を含まな
い。その為、第3図の回路は温度に対して極めて安定な
回路となり、特に発振器に利用して好適なものとなる。
Therefore, in the diagram j83, the junction resistance R1 between the base and emitter of the third transistor 09 is equal to the junction resistance R1 of the second current source 11
If the current of η is xB, then the junction resistance RM between the base and emitter of the fourth transistor α is also as shown in equation (7). Therefore, from the base of the third transistor (to) to the fourth transistor (ls
The equivalent impedance Rz when looking at the base of is, and from equations (6) and (8) above, the equivalent capacitance/actance when looking from the terminal in the circuit of FIG. 5 is as follows. No. 9
) As is clear from the equation, the equivalent capacitance reactance of the circuit shown in Figure 11 IS is the capacitance C of the capacitor α,
It is determined by JIIN, the second current jlU, and the ratio j of current I flowing through a and E, and does not include the crystal element. Therefore, the circuit shown in FIG. 3 is extremely stable with respect to temperature, and is particularly suitable for use in an oscillator.

また、第(9)式から明らかな如く、第1電流源(1m
の電流工と第2電流源0ηの電流工Eの少くとも一方を
制御信号により可変とすれば、等価容量リアクタンスを
変化させることが出来、第3図の回路を可変容量りアク
タンスとして利用出来る。特に、第1電流源(13の電
流工を変化させると容量リアクタンスを直線的に変化さ
せることが出来、電圧制御発振器の如く、温度に対して
安定でかつ直線的に変化する可変容量りアクタンスを必
要とする機器のIC化が極めて容易となる。
Furthermore, as is clear from equation (9), the first current source (1 m
If at least one of the current generator E of the second current source 0η and the current generator E of the second current source 0η is made variable by a control signal, the equivalent capacitance reactance can be changed, and the circuit of FIG. 3 can be used as a variable capacitor actance. In particular, by changing the first current source (13), the capacitance reactance can be changed linearly, and like a voltage controlled oscillator, a variable capacitor reactance that is stable and changes linearly with respect to temperature can be used. It becomes extremely easy to integrate the necessary equipment into ICs.

以上述べた如く、本発明に係る容ffl IJアクタン
ス回路は、IC化に適し、かつ温度に対して安定な特性
を有する優れたものである。
As described above, the IJ actance circuit according to the present invention is suitable for IC implementation and has excellent characteristics that are stable with respect to temperature.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の基本となる容量リアクタンス回路を
示す回路図、第2図はその等価回路図、及び第3図は本
発明の一実施例を示す回路図である。 主な図番の説明 (1tl11υ(15[1i9・・・トランジスタ、α
湯・・・コンデンサ、止・・・第114[源、αη・・
・第2電流源。
FIG. 1 is a circuit diagram showing a capacitive reactance circuit which is the basis of the present invention, FIG. 2 is an equivalent circuit diagram thereof, and FIG. 3 is a circuit diagram showing an embodiment of the present invention. Explanation of main drawing numbers (1tl11υ(15[1i9...transistor, α
Hot water...condenser, stop...114th source, αη...
-Second current source.

Claims (2)

【特許請求の範囲】[Claims] (1)エミッタが共通接続された第1の一対のトランジ
スタと、該一対のトランジスタのうちの一方のトランジ
スタのコレクタ・ベース間に接続さレタコンデンサと、
前記一対のトランジスタのエミッタ電流を定める為の第
1電流源と、前記一対のトランジスタのベースにそれぞ
れ共通接続されるベースを有する第2の一対のトランジ
スタと、該第2の一対のトランジスタのエミッタ電流を
定める為の第2電流源とから成り、前記第1の一対のト
ランジスタのうちの一方のトランジスタのコレクタから
見た等価容量を、前記コンデンサの容量と前記第1及び
第2電流源の電流比とKよって定める様に成したことを
特徴とする容量リアクタンス回路。
(1) a first pair of transistors whose emitters are commonly connected; a reta capacitor connected between the collector and base of one of the pair of transistors;
a first current source for determining emitter currents of the pair of transistors; a second pair of transistors each having a base commonly connected to the bases of the pair of transistors; and an emitter current of the second pair of transistors. and a second current source for determining the equivalent capacitance seen from the collector of one of the first pair of transistors, the capacitance of the capacitor and the current ratio of the first and second current sources. A capacitive reactance circuit characterized by being formed as defined by and K.
(2)前記第1及び第2電流源の少(とも一方は、制御
信号に応じて流れる電流が変化する可変電流源であり、
前記可変電流源に流れる電流に応じた可変等価容量が得
られる様に成したことを特徴とする特許請求の範囲第1
項記載の容量リアクタンス回路。
(2) At least one of the first and second current sources is a variable current source whose flowing current changes according to a control signal,
Claim 1, characterized in that a variable equivalent capacitance is obtained according to the current flowing through the variable current source.
Capacitive reactance circuit described in section.
JP57054822A 1982-04-01 1982-04-01 Capacitive reactance circuit Granted JPS58172010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57054822A JPS58172010A (en) 1982-04-01 1982-04-01 Capacitive reactance circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57054822A JPS58172010A (en) 1982-04-01 1982-04-01 Capacitive reactance circuit

Publications (2)

Publication Number Publication Date
JPS58172010A true JPS58172010A (en) 1983-10-08
JPH0348686B2 JPH0348686B2 (en) 1991-07-25

Family

ID=12981371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57054822A Granted JPS58172010A (en) 1982-04-01 1982-04-01 Capacitive reactance circuit

Country Status (1)

Country Link
JP (1) JPS58172010A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218010A (en) * 1983-05-25 1984-12-08 Sony Corp Variable frequency oscillating circuit
JPS6326017A (en) * 1986-07-17 1988-02-03 Rohm Co Ltd Variable reactance circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218010A (en) * 1983-05-25 1984-12-08 Sony Corp Variable frequency oscillating circuit
JPS6326017A (en) * 1986-07-17 1988-02-03 Rohm Co Ltd Variable reactance circuit

Also Published As

Publication number Publication date
JPH0348686B2 (en) 1991-07-25

Similar Documents

Publication Publication Date Title
JPS6155806B2 (en)
US3986145A (en) Variable reactance circuit including differentially-connected transistor device providing a variable reactance input impedance
JP2706501B2 (en) Filter configuration and control
JPH0414526B2 (en)
JPH07113864B2 (en) Current source device
EP0295704A2 (en) Reactance circuit
JPS63136707A (en) Filter circuit and filter device employing the same
US4335359A (en) Monolithically integrable lowpass filter circuit
JP3072002B2 (en) Active bandpass filter
JPH0122262Y2 (en)
JPH0348686B2 (en)
JP3116544B2 (en) Delay circuit
JPH0117603B2 (en)
JPS6125242B2 (en)
JP2877564B2 (en) Semiconductor capacitance element
JPH0148697B2 (en)
JPS6022845B2 (en) voltage controlled oscillator
JPS6238322Y2 (en)
JPH0540585Y2 (en)
JPH0125249B2 (en)
JPH0513063Y2 (en)
JPS6132847B2 (en)
KR820001193B1 (en) Filter circuit
JPH0154884B2 (en)
JPS6348980Y2 (en)