JPS58201376A - Solar battery device - Google Patents
Solar battery deviceInfo
- Publication number
- JPS58201376A JPS58201376A JP57083923A JP8392382A JPS58201376A JP S58201376 A JPS58201376 A JP S58201376A JP 57083923 A JP57083923 A JP 57083923A JP 8392382 A JP8392382 A JP 8392382A JP S58201376 A JPS58201376 A JP S58201376A
- Authority
- JP
- Japan
- Prior art keywords
- expansion
- coefficient
- cell
- lead
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は太陽電池装置に関し、特に太陽電池パネルの構
造の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a solar cell device, and particularly to improvements in the structure of a solar cell panel.
（発明の技術的背景）
第１図により従来の基板型太陽電池装置の構造を説明す
る。厚さｌ■の炭素鋼製の基板（１）上には、厚さ０．
３〜１ ａｓ Ｉｉ度のｇＶＡ（Ｅｔｈｙｌｅｎｅ ｖ
ｉｎｙｌａｃｅｔａｔｅ）やＰＶＢ （Ｐｏｌｙｖｉｎ
ｙｌ ｂｕｔｙｒａｌ）等の透明接着剤（２）が被覆さ
れる。この接着剤（２）のｈＶｃ豪数のリード（３）で
電気的に接続されたシリコン太陽電池セル（４）が配設
され、さらにこの上に透明接着剤（２）が被覆される。(Technical Background of the Invention) The structure of a conventional substrate type solar cell device will be explained with reference to FIG. On a carbon steel substrate (1) with a thickness of 1.
3 to 1 as II degrees of gVA (Ethylene v
inylacetate) and PVB (Polyvin
A transparent adhesive (2) such as yl butyral) is coated. A silicon solar cell (4) electrically connected to the hVc lead (3) of the adhesive (2) is disposed, and a transparent adhesive (2) is further coated thereon.
最上部には耐薬品性の強いテトラでなるフロントカバー
（５）が設けられる。前記リードは８ｎメツキした１０
０μｍ＠度のＣＵ リボンである。排気を害鳥にするた
めにリード（３）と接着剤（２）との間にガラス不織布
（６）を敷くこともある。A front cover (5) made of tetra, which has strong chemical resistance, is provided at the top. The lead is 10 plated with 8n.
It is a CU ribbon of 0μm@degree. A glass nonwoven fabric (6) may be placed between the reed (3) and the adhesive (2) to make the exhaust air harmful to birds.
（背景接衝の問題点）
太陽電池装置は通常、太陽光の直射する場所に置いて使
用するが、 １１１ｍが大型である４力用のものけ夜間
でも屋外に放置される。そのため装置は日中と夜間とで
温ば差が６０℃にも運する。このような過酷な条件下で
太陽電池装置をすると太陽電池セルがクラックを生ずる
ことがある。これを防止するために接着剤（２）の厚さ
を増すことが考えられるが杼済的【みて不利であり、又
放熱特性が悪くなってしまうので好ましくない。(Problems with background contact) Solar battery devices are normally placed in a place where they are exposed to direct sunlight, but the 4-power monometer, which is 111 meters large, is left outdoors even at night. As a result, the temperature of the equipment can vary by as much as 60 degrees Celsius between day and night. If a solar battery device is operated under such harsh conditions, cracks may occur in the solar battery cells. In order to prevent this, it is conceivable to increase the thickness of the adhesive (2), but this is not preferable since it is disadvantageous from a mechanical standpoint and the heat dissipation properties deteriorate.
又別の対策としＣＩＪ−ド（３）に弛みをもたせるため
にリード（３）の長さを長くしてもこれも確実な対策と
はなり得ない。特にストリング（セルの直列岐）が奇数
の場合には入力と出力の端子を片方に集める関係でリー
ド（３）が著しく長なると色にはり−ド１３）の先端に
セル（４）のシリコン片を“りけたま＼剥れる現象が多
発する。Another countermeasure is to increase the length of the lead (3) in order to give slack to the CIJ-cord (3), but this is also not a reliable countermeasure. Especially when the string (series branch of cells) is an odd number, the input and output terminals are gathered on one side, so if the lead (3) becomes extremely long, the tip of the lead (13) will turn into a colored silicone piece of the cell (4). The phenomenon of peeling occurs frequently.
一方テドラ製フロントカバー（５）は埃が付かないとの
り利点はあるが、湿気に対しては炭素鋼に比べると看し
く弱Ｂので、リード（３）とセル＋４３との接１（
着に用ｌている軟鑞が結晶粒界に増って酸化され、その
結果太陽１ｇ池の直列抵抗が増え、特性劣化金蔵こすと
いう欠点がある。これを防止するために熱疲労の強い鑞
剤會遍ふとそれはコスト的に或いは酸化の見地から硬質
のものに限定され、その結果セル＋４）にかかるストレ
スが増大し、クラックが生じやすくなる。On the other hand, the Tedra front cover (5) has the advantage of being dust-free, but its resistance to moisture is rather weak compared to carbon steel, so it is difficult to connect the lead (3) to the cell +43. The soft solder used increases at the grain boundaries and oxidizes, resulting in an increase in the series resistance of the solar cell and a deterioration of the properties.To prevent this, a solder system with strong thermal fatigue is Generally, it is limited to hard materials from the viewpoint of cost or oxidation, and as a result, the stress applied to the cell +4) increases and cracks are more likely to occur.
（発明の目的）
本発明は以上のような従来の欠点に鑑みなされたもので
、過酷な条件で使用してもセルのクラックが生じること
のない優れた太陽電池装置を提供することを目的とする
。(Purpose of the Invention) The present invention was made in view of the above-mentioned conventional drawbacks, and an object of the present invention is to provide an excellent solar cell device that does not cause cell cracks even when used under harsh conditions. do.
（発明の概要）
本発明は基体と、この基体の上に配設される複数の太陽
電池セルと、この複数のセルを電気的に接続するリード
とを備えた太陽電池装置において、前記基体の膨張係数
（又は見かけの膨張係数）とリードの膨張係数（又は見
かけの膨張保ａ）とをはゾ等しくしたことを特徴とする
太陽−池装置である。(Summary of the Invention) The present invention provides a solar cell device including a base, a plurality of solar cells disposed on the base, and a lead for electrically connecting the plurality of cells. This solar-pond device is characterized in that the expansion coefficient (or apparent expansion coefficient) and the expansion coefficient (or apparent expansion coefficient a) of the reeds are made equal to Z.
又Ｉ４１紀基板の膨張係数と太陽１−ヒルの膨張係数と
リードとの膨張係数をは望等しくしたことを特赦とする
。Also, the expansion coefficient of the I41 period substrate, the expansion coefficient of the Sun 1-Hill, and the expansion coefficient of the lead are made equal to each other as desired.
このような本願独特の構成Ｖこよれば、過酷な条件で使
用してもセルのクラックは生じなｌＡ浚れた太陽１池装
置となる。According to the unique configuration of the present invention, a single solar cell device with 1A drying can be obtained, which does not cause cell cracks even when used under severe conditions.
（発明の実施例） 以丁実施例により本発明の詳細な説明する。(Example of the invention) The present invention will now be described in detail with reference to Examples.
実施例１ 第２図は本発明の太陽・電池装置の概略断面図である。Example 1 FIG. 2 is a schematic cross-sectional view of the solar/battery device of the present invention.
厚さ１ＩＩｓ、幅４フィート、長さ１１フイートの４２
俤Ｎｉ−Ｆｅ合金製基板Ｏ９上には厚さ０．３〜ｌａｗ
程度のＥＶＡやＰＶＢの透明接着剤（２）が被覆される
２、この接着剤ａコの、ヒに３１のＮ＋Ｐ型シリコン太
陽′成池セル０４）およびこれらセルを接続する４５μ
ｍ Ｊ）Ａ ｇメッキを施した３９チＮｉ−Ｆｅ倉金ｍ
（膨張係数−２ｘ １Ｏ−７′０）のリードＩ（晃かけ
の膨張係数＝５入１ｏ−”Ｉｃ］）が配役される。こ＼
でリード０４の形状は第３図のセル平面図に示すように
最大幅３關×５５μｍ１１の３角形伏をなす。42 1IIs thick, 4 feet wide, 11 feet long
俤The thickness is 0.3~law on the Ni-Fe alloy substrate O9.
A transparent adhesive (2) of EVA or PVB of about 200 mL is coated on the 31 N+P type silicon solar cell 04) and a 45μ membrane connecting these cells.
m J) A 39-chi Ni-Fe Kurakane plated m
(Expansion coefficient - 2x 1O-7'0) Lead I (Expansion coefficient by Akira = 5 in 1o-"Ic]) is cast.
The shape of the lead 04 is a triangular shape with a maximum width of 3 dimensions x 55 μm 11, as shown in the cell plan view of FIG.
Ｏｎはグリッド′−極である。On is the grid'-pole.
このように本発明において、リードＱ３１の見かけの膨
張係数は５Ｘ１０−＠、／’０であってこれはセル０尋
の膨張係数４．２Ｘ １０”／’Ｏにはソ等しい。Thus, in the present invention, the apparent expansion coefficient of lead Q31 is 5X10-@,/'0, which is equal to the expansion coefficient of cell 0 fathom, 4.2X10''/'O.
リード（Ｉｍとセルａ４とを接層する半１４３として従
来用いていた８ｎ−Ｐｂ（１０チ）半田（ヤング率−４
Ｘ １０’ｄ ｙ ｎ ａ ／ｃｙｌで５ｈｅａｒ ｒ
ｎｏｄｕｌｕｓはこれに比例）からｆａｔ！ｇｕｅ ｄ
ｕｒａｂｉｌｉｔｙ の高い８ｎ−ｓｂ（ｔｏｅ） （
ヤング率＝６ｘ １０’ ｄｙｎｅ、々−）の硬い半田
に変更し、リードも１とセル６尋とのボンディングは第
３図の破線に示すように全面ボンディングとした。8n-Pb (10-chi) solder (Young's modulus -4) conventionally used as the half 143 that connects the lead (Im and cell a4)
X 10'd y na / cyl and 5hear r
nodulus is proportional to this) from fat! gue d
8n-sb (toe) with high urability (
The solder was changed to a hard solder with a Young's modulus of 6 x 10' dyne, etc., and the bonding between the lead 1 and the cell 6 fathom was made as a full-surface bond as shown by the broken line in FIG.
ボンディング後のクラック発生率は第１図に示すような
従来のセルのクラック発生率が１２．５％であるに対し
、本実施例のそれははソゼロであった。The crack occurrence rate after bonding was 12.5% in the conventional cell as shown in FIG. 1, but the crack occurrence rate in this example was zero.
又、第４図に示すよりなｌサイクル６時間の温度サイク
ルテストｔ−５０サイｚＩ′Ｌ／行なったところ従来例
の直列抵抗が１６．７％増ＪＪＩＩするのに対し、本実
施例のものは４．５価しか増加しな′かった。Furthermore, when a temperature cycle test of 1 cycle 6 hours as shown in FIG. The valence increased by only 4.5.
父、本実施例のｉＩ置におり で、パネルの組立に際し
、リードにわずかのたわみを持たするだけで、−紀温度
サイクルテスト中のり一ド断巌事故がなくなり、組立て
が容易になった。In this example, when assembling the panel, by giving a slight bend to the lead, the accident of the lead breaking during the -temperature cycle test was eliminated, and the assembly became easier.
実施例２
４′１のセルを使用する場合、リードのセルの直列抵抗
を３″セルより更に下げねばならない。其処で圧延した
スーパーアムバー（３２チＮｉ、４チＣｏ。Example 2 When using a 4'1 cell, the series resistance of the lead cell must be lower than that of a 3'' cell. There rolled super amber (32 inches Ni, 4 inches Co).
６４９ｂＦｅ 、 （１＝０．ｌＸ１０−’／’Ｏ）の
１００／ｊのリボンをｉｌｌい１００μのＣｕ メッ
キを施した。一般に圧延した金属はアニールした金属よ
り膨張係数ａが小さいので圧延した金−を用りた。途中
工程でアニールされない様、半ＩＢｆｏ目 を用い、ｐ
ａｒｒａｒｅｌｌ ｇａｐｂｏｎｄｅｒ で数秒つｂ
ｏｎｄ ｉｎｇを行った。A 100/j ribbon of 649bFe, (1=0.1×10-'/'O) was plated with 100μ of Cu. Generally, rolled metal has a smaller coefficient of expansion a than annealed metal, so rolled gold was used. In order to avoid annealing during the process, half IBfo is used, and p
Arrarel gapbonder for a few seconds
Ond ing was performed.
史に基板の放熱効果を向ヒさせる為、基板とし°Ｃ０，
９ａｕｇ厚の３９チ＋Ｎ１−Ｆ’６身金に約１００μの
Ｃ１ｌメッキを行った。之に依り従来Ｍｉニ時にセル破
１卓が７．５−存在した物が２俤以下に減少した。更に
日中の微風下で基板裏面が従来的５５°０を示した物が
本実施例により４５℃に下り、之に伜な°つで効率が向
上した。In order to improve the heat dissipation effect of the board, the board was set at °C0,
Approximately 100μ of C1l plating was applied to a 9aug thick 39chi+N1-F'6 body metal. As a result, the number of cell breaks that existed in the previous version of Mi was reduced to 2 or less, compared to 7.5. Furthermore, under a light wind during the day, the temperature of the back surface of the substrate, which was conventionally 55° 0, was reduced to 45° C. in this example, and the efficiency was improved at such a low temperature.
２専の実施例を通じて、リードも基体も見掛けの膨張係
数αがセルのそれに近ければ良い。従ノーＣ，７１Ｊコ
ンセルと膨張係数の近い％ ４２４Ｎｉ −Ｆｅ合金を
はじめ、それより小さい３９・茶Ｎ１−Ｆ’ｅ、３６チ
Ｎ１−Ｆｅ（Ｉｎｖａｒ）、８ｕｐｅｒ Ｉｎｖａｒ
等に膨張係数αと１気・熱伝導層の大き１ＡＣｕ、Ａｇ
、Ａ／等を被着して見掛けの＃Ｊ張係数を合わせた物を
使用して良い、此の他Ｋ ４． Ｃ−Ｃｕ （マイナス
のαを示すグラファイトファイバーと良導体７） （、
’ ＋＋の複舒材）等も使＃ｌＩＣ１ｒ能である。In the second embodiment, it is sufficient that the apparent expansion coefficient α of both the lead and the substrate is close to that of the cell. Including %424Ni-Fe alloys with expansion coefficients similar to J-No.C and 71J Concel, smaller 39.Brown N1-F'e, 36th N1-Fe (Invar), and 8upper Invar.
etc., the expansion coefficient α and the size of the thermal conductive layer 1ACu, Ag
, A/, etc. can be used to match the apparent tensile coefficient of #J. In addition to this, K4. C-Cu (graphite fiber showing negative α and good conductor 7) (,
' ++ compound shod material) etc. can also be used.
（変形例）
熱・毘ハイブリット最陽鑵池パネルは、基本的には基板
型構造に似ている。実施例２に於（八でセルに迩択吸収
膿をコートシ、基板セしてステンンス管ｔ−被讐したＣ
ｕメッキ３９係Ｎｉ−Ｐｅ、′ｇ金を用いた。上記パネ
ルを発泡ポリスチロール等の保温剤の入った箱の中へ入
れ、辷にガラスのｉｌをした新約８０係のエネルギー効
率を示すと共に゛空だきした時の七々の破損が無くなっ
た、
通常・・イブリッド用パネルの１考、膨張糸数バランナ
ーとしてＡｊ！ｇＯｓ ｋ ｍ ｆ集熱促間に挿むが、
之は基だ高−であり、集光ＮＴ：無い限り、上記実施例
の物で光分実用に耐え得る。−付けする配ａはスデンレ
ス以外にＡ１．Ｃｕ、Ａｇ等でよく、被着法は必ずしも
鑞付けでなく、エポキシ等でも良い。(Modified example) The thermal/bi hybrid Saiyo Aike panel basically resembles a substrate type structure. In Example 2, the cell was coated with absorbed pus, the substrate was placed, and a stainless steel tube was coated.
U plating 39 Ni-Pe and 'g gold were used. The above panel was placed in a box containing a heat insulator such as foamed polystyrene, and it showed the energy efficiency of the New Testament 80 section with a glass insulator on the sleeve, as well as eliminating the damage that would occur when the panel was left empty.・・One thought on the hybrid panel, Aj as an expansion thread count runner! gOs km fInsert during heat collection acceleration,
This is basically high, and as long as there is no condensing NT, the one in the above embodiment can withstand practical use of optical components. - The placement a to be attached is A1 in addition to Sudenres. It may be made of Cu, Ag, etc., and the deposition method is not necessarily brazing, but may also be epoxy or the like.
第１図は従来の太陽電池装置の概略断面図、第２図は本
発明の太陽１を池装置の概略断面図、第３図は第２図に
係るセルの平面図、第４図は温度サイクルテストの条Ｖ
＋を説明する図である。
１．１１ ・基板 ３，１３ リード４．１４
・セル ５，１５ フロントｂ／（−（７
３１７） 代理人 升哩士 則 近 ｍ 市 （ほ
か１名）第 １ 図
第 ２ 図Fig. 1 is a schematic sectional view of a conventional solar cell device, Fig. 2 is a schematic sectional view of a solar cell device of the present invention, Fig. 3 is a plan view of the cell according to Fig. 2, and Fig. 4 is a temperature Cycle test article V
It is a figure explaining +. 1.11 ・Board 3,13 Lead 4.14
・Cell 5,15 Front b/(-(7
317) Agent: Noriyoshi Chika (and 1 other person) Figure 1 Figure 2
Claims (1)
の太陽電池セルと、この複数のセルを電気的に接続する
リードとを備えた太陽電池装置において、前記基体のｌ
ｌ張係数（又は見かけの膨張係数）とリード、″）Ｉ！
１４１［Ｘ畝（又は見かけの膨張保ｄＬ）とを２乏ｙ等
しくしたことを特徴とする太陽電池ａｉｉ０（２）
前記基体の膨張係数を太陽電池セルの膨張係数にはソ等
しくしたことを特徴とする特ｆＦｆ祷求の範囲第１項記
載の太陽電池装置。 （３） 嶋紀太１１１′ｗＬ池セルがノリ、コン太−
電池七νであり％−配基体が旧−ｒｅ合金又はこの合金
に４熱伝導皐物Ｗを僚嶺したものであることｔ峙敏とす
る特許請求のａ＃Ｍ譲１項記載の太陽題池偵１゜ｔ４Ｊ
ｄ紀Ｎｔ −ｒｅ 合金に加工硬化を幀したま＼使
用することｔ−特徴とする特許請求の範囲嬉ｌ槙ｍｌ載
の太１１１１電池装置。[Claims] +1) A solar cell device comprising a Jii body, a plurality of solar cells disposed on the base, and a lead electrically connecting the plurality of cells, wherein the base l of
l tension coefficient (or apparent expansion coefficient) and lead, ″) I!
141 [Solar cell aii0(2) characterized in that
The solar cell device according to item 1, characterized in that the expansion coefficient of the base is equal to the expansion coefficient of the solar cell. (3) Kita Shima 111'wL pond cell is glue, Konta-
The solar title described in Assignment 1 of the patent claim is that the battery is seven ν and the substrate is an old-RE alloy or this alloy combined with 4 thermally conductive wires W. Ikeda 1゜t4J
A battery device according to claim 1, characterized in that a Nt-re alloy is used while being work hardened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57083923A JPS58201376A (en) | 1982-05-20 | 1982-05-20 | Solar battery device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57083923A JPS58201376A (en) | 1982-05-20 | 1982-05-20 | Solar battery device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58201376A true JPS58201376A (en) | 1983-11-24 |
Family
ID=13816116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57083923A Pending JPS58201376A (en) | 1982-05-20 | 1982-05-20 | Solar battery device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201376A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100480A (en) * | 1990-04-18 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| WO2003023869A3 (en) * | 2001-09-11 | 2003-08-28 | Boeing Co | Low cost high solar flux photovoltaic concentrator receiver |
-
1982
- 1982-05-20 JP JP57083923A patent/JPS58201376A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100480A (en) * | 1990-04-18 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and method for manufacturing the same |
| WO2003023869A3 (en) * | 2001-09-11 | 2003-08-28 | Boeing Co | Low cost high solar flux photovoltaic concentrator receiver |
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