JPS5820719A - Compound represented by formula tmgazno4 and having hexagonal lamellar structure, and its preparation - Google Patents
Compound represented by formula tmgazno4 and having hexagonal lamellar structure, and its preparationInfo
- Publication number
- JPS5820719A JPS5820719A JP11833081A JP11833081A JPS5820719A JP S5820719 A JPS5820719 A JP S5820719A JP 11833081 A JP11833081 A JP 11833081A JP 11833081 A JP11833081 A JP 11833081A JP S5820719 A JPS5820719 A JP S5820719A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- gallium
- thulium
- atmosphere
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 19
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims 3
- 230000000537 coughlike effect Effects 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 235000009419 Fagopyrum esculentum Nutrition 0.000 description 1
- 240000008620 Fagopyrum esculentum Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000036770 blood supply Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000000968 medical method and process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
不発明は、社風化合物で6る1m Ga Zn04で水
爆れる六方晶系の層状構造を有する化合物およびその製
造法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a compound having a hexagonal layered structure that is hydrogen bombed with 6 m Ga ZnO4, and a method for producing the same.
恢米、 YFe204で示される六方晶系の層状構造を
有する化合物は、本出厭人らによって合成され、その存
在が既に知られている。この化合vilJは、Y j
+ iI’ e jl + H’ e J +042−
で示1tLる↓うに、妖の2価イ万ンと3tibイオ/
は、5配位の成木イオンによって囲まれ、イツトリウム
(Y)は、6配位のat索イオンをその周わりに持って
いる化合物であり、磁性をもっている。A compound having a hexagonal layered structure represented by YFe204 was synthesized by Keito Motoide et al., and its existence is already known. This compound vilJ is Y j
+ iI' e jl + H' e J +042-
Shown with 1tL↓Uni, the demon's bivalent Iman and 3tib Io/
is surrounded by five-coordinated mature ions, and yttrium (Y) is a compound that has six-coordinated at-chord ions around it, and is magnetic.
木兄1311は、前記、Ya +p e2 + peX
+ 02−化合物のY3+の代わシに、’I’m”、
k’e” の代わりにz1!+を、(j’e3+の代わ
シにGa”w ) IMきかえた糾規な化合物dよび−
1−0勇這出を提供するにめる・本@ Hv ’lin
ua Zn04で示される化合mr工、こQ化酋匈甲
、ツリウムはTm” イオン、ガリウムは(ja’+兜
舶ムZn”+ として4征してよ・ハTm”Ua”、+
lan”弓−として衣Vすことができる・ この結晶u
、s祷1図に示すようにバ方晶層状襦遺を神っている。Kinoe 1311 is the above-mentioned, Ya + p e2 + peX
+ 'I'm' in place of Y3+ in the 02-compound,
z1!+ instead of k'e''(Ga"w instead of j'e3+) IM changed compound d and -
Nimeru Book @ Hv'lin to provide a 1-0 courageous exit
The compound mr shown by ua Zn04, this Q compound, thulium is Tm" ion, and gallium is (ja' + helmet ship Zn"+), HA Tm"Ua", +
This crystal can be used as a bow.
As shown in Figure 1, it is said to have a crystalline layered structure.
蝋大の丸は販系、甲丸iよツリワム蛾少の黒丸はガリウ
ムと亜鉛を示している。ガリやムと他1島ラノダムに分
和している。The wax-sized circles represent sales, and the small black circles represent gallium and zinc. It is divided into Gariyamu and one other island, Ranodam.
!!IL醗02呻イ万/とカリウムの3価イオンは。! ! The trivalent ion of IL and potassium is.
5配位のm−イオンによって凹lれている。結晶学的に
は同一の位置を占りている。tた、ツリクム電よ6配置
O歳嵩tでの胸4)9に神りている。−イオンでめる#
を素紘緘密構造tとりている。8% tおよびUは単位
格子内に於ける位置を示す。It is depressed by a five-coordinated m-ion. Crystallographically, they occupy the same position. t, Tsurikumu Den, 6 placement O years old, chest 4) 9 is divine. -Ion Demerit#
It has a dense structure. 8% t and U indicate the position within the unit cell.
する相対ス射mit%l(至)区画1表のとお如である
。As shown in Table 1, the relative radiation %l (to) is as shown in table 1.
第 1 パ T+n da &no4 仝閥#はl弓mでりり1その融涛は11−でめシ。Part 1 Part T+n da &no4 The faction # is l bow m and riri 1, and the melting wave is 11-.
格子にaは次のと&)で勘る。In the grid, a is interpreted as the following and &).
、1.l =、i、a3uuu ±uuoo+
(X)C,+=23.066 ±α(
J(J6 (Xンこの化合*は、午尋捧材料お
よび蕎媒として有用な%りでめる。, 1. l =, i, a3uuu ±uuoo+
(X)C, +=23.066 ±α(
J(J6 (Xn) This compound* is a compound useful as a dipping sauce material and a soba broth.
この1L−&備は、医の方法Vζよりて線速し侍られ4
、J
゛41t^ツリクム(’rm)如るいはぼ1Lツリウム
(1石20jJちしくlよ%/AIMされることによっ
て欲化ツリクム(’l’lll 2(J 3ハこ分解ざ
Cる化合物と金llI4ガリワム、めるいは醸化カリウ
ム(Ua2(J、l/もしくは、加熱さオLることkC
より酸化7Jリウム(ua2U;、)に分解される化合
物とMJL鉛りるいは献化亜蛤(Zn(J)もしくは加
熱されることVこより分解さnてば化亜鉛(乙nL))
τ生ノ′る化合物とt、ツリウム、カリウム、亜縮の剖
酋〃孟菖子比でl刈I XJ lになるように混合して
h 13tJO℃以上の一度で、大気中、酸化雰」ヌ
41 りるいtよガク2ムVよひ血給p1谷々3価イオ
ン仏雇s2mイオン仏−よシ瀘元dれない楓にの1:2
°1j
本発明に用匹る出発物質は%riim04のをそのiま
使用してもよ−が、出発物質相互2間の化学反応を運や
かKA行させ4た6に#i、 袢径がちい妾い根よく、
特にlOFm以下でめゐCとが好ましい。This 1L-&bi is linearly served by the medical method Vζ and served 4
, J ゛41t^Thuricum ('rm) is like 1L Thulium (1 stone 20j and gold llI4 galiwaum, mei is fermented potassium (Ua2 (J, l/or kC)
Compounds that are decomposed into 7J lithium oxide (UA2U;,) and MJL lead phosphorus (Zn (J)) or zinc oxide (Ua2U;) that are decomposed by heating.
Mix the raw compounds with t, thulium, potassium, and subcontractors so that the ratio is 1 x 1, and then remove the oxidizing atmosphere in the atmosphere at a temperature of 13 tJO℃ or higher. 41 Rirui tyo Gaku2mu V Yohi blood supply p1 valley trivalent ion Buddha employment s2m ion Buddha - Yoshi filtration original d Kaede's 1:2 °1j The starting material used in the present invention is % You can use riim04 for now, but luckily the chemical reaction between the starting materials 2 is carried out in KA, and #i is small in diameter.
In particular, it is preferable that the value is less than lOFm.
を九、牛導体材料として用いる場合には不純物の混入を
きらうので、出発轡科*買は開直が高iはど好まし−、
この原料を七〇籠f1あるい・エアルスール鋺もしくは
アセトンと共に充分に−合すす。9. When using it as a conductor material, it is preferable to avoid contamination with impurities, so it is preferable to start with a high degree of openness.
Thoroughly combine this raw material with 70 baskets of F1, airsour, or acetone.
これらの混合割合は、ツリウム、ガリウム、亜鉛の割合
が總子ルとして1対l対lの割合でるる。The mixing ratio of these materials is such that the ratio of thulium, gallium, and zinc is 1:1:1.
この割合tはずすと目的とする化合物f:侍ること鉱出
米ない。この混合物を大気中%あるいは絃化性XS気も
しくは、カリウムおよび、翌浦が3価イオン状層および
2mイオン状−から還元され憎なりh一度の鳳元雰囲気
のもとで、1300℃以上の一度で加熱する。m熱#関
嬬、1日tしくにそれ以上でhゐ、加熱01liiIl
の昇1&&遍碇には制nはなZn04 化合物は、#&
色を示し、横木X@回折法によって結晶構造を有するこ
とがわかった。その結晶構造線、既に本出朧人が得九Y
Fez04 と同型であることがわかりた。出発1合試
料と反応生成物の#C科Jlttt一槽密に秤量し、得
られ九試料の化学および試a脣mo*化亜鉛(ZnO)
粉末i、モル比−t’ 1 対1 対2 (0割合11
Cfff友し、乳wFPI3でエチルアルコールを加え
て充分に混合し、平均粒径数pmの値11本t−得た。If this ratio t is removed, the target compound f: Samurai will not be produced. This mixture was heated to 1,300°C or higher under an atmosphere of 1,300°C or more, so that the mixture could be reduced from the trivalent ionic layer and the 2m ionic layer. Heat at once. m fever
The Zn04 compound is #&
It showed a color and was found to have a crystalline structure by cross-gid X@ diffraction method. The crystal structure line has already been obtained by Oboro Honde.
It turned out to be the same type as Fez04. The starting sample and the reaction product were weighed closely in one tank, and the resulting nine samples were chemically and assayed as zinc oxide (ZnO).
Powder i, molar ratio -t' 1 to 1 to 2 (0 ratio 11
Ethyl alcohol was added to the milk wFPI3 and mixed thoroughly to obtain 11 particles with an average particle diameter of several pm.
該混合物を白金ルルツボ内にみ九して% IJ!tsO
℃に設定されえ祿臘の7リコニツトr円に入れ、2日間
加熱し、その後試料を炉外にと多出し、皇温まで1遍に
冷却した。得られ九試料は−Ga Zn04 で6p1
既に報HされているYf’@、u、と−結晶学的には、
同型であることが粉晶♀的注買を示し7C。The mixture was poured into a platinum crucible and % IJ! tsO
The sample was placed in a 7 liter oven set at ℃ and heated for 2 days, after which the sample was taken out of the oven and cooled down to temperature. The nine samples obtained were -Ga Zn04 and 6p1
Yf'@, u, which has already been reported - crystallographically,
Isomorphism indicates the purchase of powder crystal ♀ 7C.
1閣eよ、卒兄明の′■盲Ga 1an04鮎晶の図で
ろる。
域大の丸は#1!巣、中丸は、ツリウム、蹴小黒丸は亜
鉛とカリウムを示す。
i 、 ;+i”
苓ヒ、書)1.−!で1st Cabinet e, the picture of my graduate brother Akira'■blind Ga 1an04 Ayu Akira. Regional University Maru is #1! The nest and middle circle indicate thulium, and the small black circle indicates zinc and potassium. i, ;+i” Reihi, writing) 1.-!
Claims (1)
構逅を市する化合物。 2 金属ツリウム(Tm) 4Qるいはば化ツリウム(
T+r+2(J3jもしくは、加熱されるどとによシ酸
1じツリウム(’rm、o3)に分解される化合物と、
金属ガリワム(Ga) 6るいは酸化ガリウム(’d1
1.203)%hしくは、加熱されることによ)酸化ガ
リウム(Ga O)に分解される化合物と、亜m1(Z
n) おるいは酸化亜鉛(ZnO)もしくは’ 7
AIMされることにより分解されて戚化亜m1(ZnO
)を生ずる化合物とをツリウム、ガリウム、亜鉛の割合
が原子比で1対1対1になるように混合して、1300
℃以上の温度で大気中、咳1じ性雰囲気ろるいはガリウ
ムおよび亜鉛が吾々3iIIIIイオン状練、2価イオ
/状態よりiIL元されない@度の慮元寥囲気のもとで
加熱することを物値とするTm (ja Zn04で示
される六方晶系の層状栴這會有する化合物の製造法。[Scope of Claims] A compound exhibiting a layered structure of hexagonal crystal threads represented by '11~n Ua Zn04. 2 Thulium metal (Tm) 4Q thulium carbide (
T+r+2 (J3j or a compound that is decomposed into dithulium dissulfate ('rm, o3) when heated,
Metallic gallium (Ga) 6 or gallium oxide ('d1
1.203) %h or by heating) a compound that decomposes into gallium oxide (GaO) and submium (Z
n) Zinc oxide (ZnO) or '7
It is decomposed by AIM and becomes ZnO
) with a compound that produces thulium, gallium, and zinc in an atomic ratio of 1:1:1, and
Heating in the atmosphere at a temperature above ℃, in a cough-like atmosphere, or in an atmosphere where gallium and zinc are in the ionic state, and divalent ions/states are not changed from the iIL state. A method for producing a compound having a hexagonal lamellar structure represented by Zn04.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11833081A JPS606894B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by TmGaZnO↓4 and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11833081A JPS606894B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by TmGaZnO↓4 and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5820719A true JPS5820719A (en) | 1983-02-07 |
| JPS606894B2 JPS606894B2 (en) | 1985-02-21 |
Family
ID=14733989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11833081A Expired JPS606894B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by TmGaZnO↓4 and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS606894B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10115482A1 (en) * | 2001-03-29 | 2002-10-10 | Fraunhofer Ges Forschung | Solder composition used for soft soldering electronic components comprises starting solder composition based on metal having specified melting temperature |
-
1981
- 1981-07-28 JP JP11833081A patent/JPS606894B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10115482A1 (en) * | 2001-03-29 | 2002-10-10 | Fraunhofer Ges Forschung | Solder composition used for soft soldering electronic components comprises starting solder composition based on metal having specified melting temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS606894B2 (en) | 1985-02-21 |
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