JPS5820754A - Film-forming method of electrically conductive film - Google Patents
Film-forming method of electrically conductive filmInfo
- Publication number
- JPS5820754A JPS5820754A JP11719281A JP11719281A JPS5820754A JP S5820754 A JPS5820754 A JP S5820754A JP 11719281 A JP11719281 A JP 11719281A JP 11719281 A JP11719281 A JP 11719281A JP S5820754 A JPS5820754 A JP S5820754A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- indium
- powder
- compound
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 150000003606 tin compounds Chemical class 0.000 claims description 4
- 150000002472 indium compounds Chemical class 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 7
- XALNPQXSWUMLQE-UHFFFAOYSA-K 2-hydroxypropanoate;indium(3+) Chemical compound [In+3].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O XALNPQXSWUMLQE-UHFFFAOYSA-K 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005507 spraying Methods 0.000 description 5
- NGCDGPPKVSZGRR-UHFFFAOYSA-J 1,4,6,9-tetraoxa-5-stannaspiro[4.4]nonane-2,3,7,8-tetrone Chemical compound [Sn+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O NGCDGPPKVSZGRR-UHFFFAOYSA-J 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- SKEZDZQGPKHHSH-UHFFFAOYSA-J 2-hydroxypropanoate;tin(4+) Chemical compound [Sn+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O SKEZDZQGPKHHSH-UHFFFAOYSA-J 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- LKEDUJPRSZGTHZ-UHFFFAOYSA-H indium(3+);oxalate Chemical compound [In+3].[In+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O LKEDUJPRSZGTHZ-UHFFFAOYSA-H 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/27—Oxides by oxidation of a coating previously applied
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、導電性被膜の成膜法さらに詳しくＦｉ酸化イ
ンジウムを主体とする導電性被膜の成膜法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a conductive film, and more particularly to a method for forming a conductive film mainly composed of Fi indium oxide.
ガラス基板上への導電性被膜の成膜法として、真空蒸着
法、スパッタ法、ＣＶＤ法、スプレー法、塗布法尋が従
来から知られているが、真空蒸着法、ス／々ツタ法では
量産化が困難で、かつ、製造価格が高くなる欠点を有し
ており、また、ＣＶＤ法、スプレー法、塗布法尋は大量
の溶媒を使用するため安全性、分解ガスの地理、液の管
理等の諸問題を解決しなければならない。Vacuum evaporation, sputtering, CVD, spraying, and coating methods are conventionally known as methods for forming conductive films on glass substrates, but vacuum evaporation and sputtering methods are difficult to mass-produce. CVD, spraying, and coating methods use a large amount of solvent, so there are issues with safety, the geography of decomposed gas, liquid management, etc. We must solve the following problems.
本妬明は、前記公知の成膜法の欠点を改良した安全かつ
容易な導電性被膜の成膜法を提供することを目的とする
。The object of the present invention is to provide a safe and easy method for forming a conductive film, which improves the drawbacks of the above-mentioned known film forming methods.
本発明者等は前記目的を達成すべく鋭意研究の結果、高
温に加熱し九ガラス基板面に、粉末有機金属組成物を吹
付けることにより、均質かつ、一様な厚みの金属酸化物
被膜が形成されることを見出し本発明を完成した。As a result of intensive research to achieve the above object, the present inventors have found that a homogeneous metal oxide film with a uniform thickness can be obtained by heating the glass substrate to a high temperature and spraying a powdered organometallic composition onto the surface of the glass substrate. The present invention was completed by discovering that
本発明は、高温のガラス基板表面に、気流中において粉
末有機インジウム化合物と粉末有機スズ化合物とからな
る組成物を接触せしめることを特徴とする導電性被膜の
成膜法である。The present invention is a method for forming a conductive film, which is characterized by bringing a composition consisting of a powdered organic indium compound and a powdered organic tin compound into contact with the surface of a glass substrate at a high temperature in an air flow.
本発明において、粉末有機インジウム化合物として室温
下において固体である有機インジウム化合物のいずれを
も使用しうるが、トリスアセチルアセトナトインジウム
、乳酸インジウム、ｇ酸インノウム等を使用するのが、
合成の容易さ、化合物の安定性等から好ましい。In the present invention, any organic indium compound that is solid at room temperature can be used as the powdered organic indium compound, but indium trisacetylacetonate, indium lactate, innoum g-acid, etc. are used as the powdered organic indium compound.
Preferable from the viewpoint of ease of synthesis, stability of the compound, etc.
また、粉末有機スズ化合物としては、スズの蓚酸塩、乳
酸塩、酢酸塩′Ｊ＃が使用でき、ドープ剤として使用さ
れる。ドープ剤としてのスズの使用量は、インジウム１
原子に対し、スズ０．０１〜０．３の原子比で使用出来
るが、０．０５〜０．１５の原子比が好ましい。Further, as the powdered organic tin compound, tin oxalate, lactate, and acetate 'J# can be used, and are used as a doping agent. The amount of tin used as a doping agent is indium 1
An atomic ratio of 0.01 to 0.3 tin atoms can be used, but an atomic ratio of 0.05 to 0.15 is preferred.
使用する粉末の粒径は１０μ以下が好ましく、望ましく
は、１μ以下の粉末が更に適している。The particle size of the powder used is preferably 10 μm or less, more preferably 1 μm or less.
本発明において、前記粉末有機インジウム化合物と、粉
末有機スズ化合物とからなる組成物中に一定量の空気を
吹込み浮遊せしめ、該組成物粉末を含有する気流を、゛
あらかじめ４００〜６５０℃の温度に加熱せしめたガラ
ス基板表面に一定時間吹付けることにより、酸化インジ
ウムを主体とする導電性被膜が該ガラス基板表面に形成
される。ガラス基板の温度は、使用する化合物の１１類
により異なるが、５００〜６００℃が好ましい。また、
吹付は時間を調整することにより、任意の膜厚および表
面抵抗値を得ることができる。In the present invention, a certain amount of air is blown into the composition consisting of the powdered organic indium compound and the powdered organic tin compound to make it float, and the air flow containing the composition powder is heated to a temperature of 400 to 650°C in advance. By spraying the liquid onto the heated glass substrate surface for a certain period of time, a conductive film mainly composed of indium oxide is formed on the glass substrate surface. The temperature of the glass substrate varies depending on the type 11 compound used, but is preferably 500 to 600°C. Also,
By adjusting the spraying time, any film thickness and surface resistance value can be obtained.
本発明は、簡単な操作で均質かつ、一様な厚みの導電性
被膜を容易に形成し得る導電性被膜の成膜法を提供する
ものであ少、その産業的意義は大きい。The present invention has great industrial significance because it provides a method for forming a conductive film that can easily form a conductive film of uniform thickness and homogeneity with simple operations.
以下、本発明を実施例によシさらに詳しく説明する。た
だし、本発明は下記実施例に限定されるものではない。Hereinafter, the present invention will be explained in more detail using examples. However, the present invention is not limited to the following examples.
実施例１
ホットプレート上に５３Ｘ５ｍのアルカリガラスを置き
ガラスの表面温度を５５０℃に保持した後、５μ以下に
粉砕した乳酸インジウムと乳酸スズとの工ｎ／５ｎ＝Ｉ
Ｖ１の混合組成物中ＶＣ１ｔ／―の速度で空気を吹込み
導管により加熱された前記ガラス基板上にｉｏ分間吹付
けた。Example 1 After placing a 53 x 5 m alkali glass on a hot plate and maintaining the surface temperature of the glass at 550°C, the process of indium lactate and tin lactate, which were ground to 5μ or less, was carried out n/5n=I
In the mixed composition of V1, air was blown at a rate of VC1t/- for io minutes onto the heated glass substrate through a blowing conduit.
得られた被膜は、透明で固く表面抵抗値は（資）Ω／ａ
ｑであった。The obtained film is transparent, hard, and has a surface resistance value of Ω/a.
It was q.
実施例２
粉砕された蓚酸インジウムと蓚酸スズとの工ｎ／５ｎ＝
ｌＯ／１の混合組成物中に１．５ ｔ／―の速度で空気
を吹込み、６００℃の表面温度に加熱されたガラス基板
上に３分間吹付けた。Example 2 Process of pulverized indium oxalate and tin oxalate n/5n=
Air was blown into the mixed composition of 1O/1 at a rate of 1.5 t/- for 3 minutes onto a glass substrate heated to a surface temperature of 600°C.
得られた被膜は透明で固く表面抵抗値は、ωΩ／ｓｑで
あった。The obtained film was transparent and hard, and had a surface resistance value of ωΩ/sq.
出 願 人 日本曹達株式会社
代 理 人 伊 藤 晴 ２同
横 山 吉 集＝２Ｃ。Applicant: Nippon Soda Co., Ltd. Representative: Haru Ito 2nd party
Yokoyama Yoshi collection = 2C.
Claims (1)
有機インノウム化合物と粉末有機スズ化合物とからなる
組成物を接触せしめることを特徴とする導電性被膜の成
膜法。 ２、ガラス基板の表面温度が４００〜６５０℃である特
許請求の範囲第１項記載の成膜法。 ｊ、 スズ′原子のインジウム原子に対する比が０．０
１〜０．３である組成物を用いる特許請求の範囲第１項
記載の成膜法。 ４、組成物を気流中に浮遊分散せしめ、加熱されたガラ
ス基板上に吹付ける特許請求の範囲第１項記載の成膜法
。[Scope of Claims] A method for forming a conductive film, which comprises bringing a composition consisting of a powdered organic innoum compound and a powdered organic tin compound into contact with the surface of a glass substrate i, wi in an air flow. 2. The film forming method according to claim 1, wherein the surface temperature of the glass substrate is 400 to 650°C. j, the ratio of tin' atoms to indium atoms is 0.0
1. The film forming method according to claim 1, which uses a composition having a molecular weight of 1 to 0.3. 4. The film forming method according to claim 1, wherein the composition is suspended and dispersed in an air stream and sprayed onto a heated glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719281A JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11719281A JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5820754A true JPS5820754A (en) | 1983-02-07 |
| JPH0121107B2 JPH0121107B2 (en) | 1989-04-19 |
Family
ID=14705676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11719281A Granted JPS5820754A (en) | 1981-07-28 | 1981-07-28 | Film-forming method of electrically conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5820754A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61194181A (en) * | 1985-01-22 | 1986-08-28 | Nippon Sheet Glass Co Ltd | Indium formate powder for forming thin layer on substrate, more particularly glass and preparation thereof and method for forming layer from powder of this kind |
| JPS627844A (en) * | 1985-07-03 | 1987-01-14 | Nippon Sheet Glass Co Ltd | Treatment of thin metallic oxide or metallic layer to improve characteristic |
| KR100436379B1 (en) * | 2000-04-18 | 2004-06-16 | 인터내셔널 비지네스 머신즈 코포레이션 | Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227165A (en) * | 1975-08-21 | 1977-03-01 | Paper Converting Machine Co | Business form substack processor for making balanced stack |
| JPS5319013A (en) * | 1976-08-05 | 1978-02-21 | Fujitsu Ltd | Writing circuit for magnetic memory apparatus |
| JPS5663844A (en) * | 1979-10-31 | 1981-05-30 | Nippon Sheet Glass Co Ltd | Forming method of metal oxide coat |
-
1981
- 1981-07-28 JP JP11719281A patent/JPS5820754A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5227165A (en) * | 1975-08-21 | 1977-03-01 | Paper Converting Machine Co | Business form substack processor for making balanced stack |
| JPS5319013A (en) * | 1976-08-05 | 1978-02-21 | Fujitsu Ltd | Writing circuit for magnetic memory apparatus |
| JPS5663844A (en) * | 1979-10-31 | 1981-05-30 | Nippon Sheet Glass Co Ltd | Forming method of metal oxide coat |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61194181A (en) * | 1985-01-22 | 1986-08-28 | Nippon Sheet Glass Co Ltd | Indium formate powder for forming thin layer on substrate, more particularly glass and preparation thereof and method for forming layer from powder of this kind |
| JPS627844A (en) * | 1985-07-03 | 1987-01-14 | Nippon Sheet Glass Co Ltd | Treatment of thin metallic oxide or metallic layer to improve characteristic |
| KR100436379B1 (en) * | 2000-04-18 | 2004-06-16 | 인터내셔널 비지네스 머신즈 코포레이션 | Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121107B2 (en) | 1989-04-19 |
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