JPS58213482A - 光結合装置 - Google Patents

光結合装置

Info

Publication number
JPS58213482A
JPS58213482A JP57096589A JP9658982A JPS58213482A JP S58213482 A JPS58213482 A JP S58213482A JP 57096589 A JP57096589 A JP 57096589A JP 9658982 A JP9658982 A JP 9658982A JP S58213482 A JPS58213482 A JP S58213482A
Authority
JP
Japan
Prior art keywords
layer
light
receiving element
emitting element
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57096589A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425717B2 (2
Inventor
Masahiro Nonaka
野中　正煕
Fumihiko Sato
文彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP57096589A priority Critical patent/JPS58213482A/ja
Publication of JPS58213482A publication Critical patent/JPS58213482A/ja
Publication of JPH0425717B2 publication Critical patent/JPH0425717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57096589A 1982-06-04 1982-06-04 光結合装置 Granted JPS58213482A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57096589A JPS58213482A (ja) 1982-06-04 1982-06-04 光結合装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57096589A JPS58213482A (ja) 1982-06-04 1982-06-04 光結合装置

Publications (2)

Publication Number Publication Date
JPS58213482A true JPS58213482A (ja) 1983-12-12
JPH0425717B2 JPH0425717B2 (2) 1992-05-01

Family

ID=14169103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57096589A Granted JPS58213482A (ja) 1982-06-04 1982-06-04 光結合装置

Country Status (1)

Country Link
JP (1) JPS58213482A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104823A (en) * 1988-03-31 1992-04-14 Northern Telecom Limited Monolithic integration of optoelectronic and electronic devices
EP0893834A3 (en) * 1993-11-02 1999-05-06 Matsushita Electric Industrial Co., Ltd Semiconductor device comprising an aggregate of semiconductor micro-needles
US6734451B2 (en) 1993-11-02 2004-05-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50150389A (2) * 1974-05-22 1975-12-02
JPS5249787A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Semiconductor light coupling device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50150389A (2) * 1974-05-22 1975-12-02
JPS5249787A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Semiconductor light coupling device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104823A (en) * 1988-03-31 1992-04-14 Northern Telecom Limited Monolithic integration of optoelectronic and electronic devices
EP0893834A3 (en) * 1993-11-02 1999-05-06 Matsushita Electric Industrial Co., Ltd Semiconductor device comprising an aggregate of semiconductor micro-needles
EP0887867A3 (en) * 1993-11-02 1999-05-06 Matsushita Electric Industrial Co., Ltd Semiconductor device comprising an aggregate of semiconductor micro-needles
US6087197A (en) * 1993-11-02 2000-07-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
US6177291B1 (en) 1993-11-02 2001-01-23 Matsushita Electric Industrial Co., Ltd. Method of making aggregate of semiconductor micro-needles
US6489629B1 (en) 1993-11-02 2002-12-03 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
US6734451B2 (en) 1993-11-02 2004-05-11 Matsushita Electric Industrial Co., Ltd. Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0425717B2 (2) 1992-05-01

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