JPS583222A - Ion beam accumulation - Google Patents

Abstract

PURPOSE:To form an accumulating layer with good crystal by using energy beams such as electron beams together with ion beams. CONSTITUTION:Relatively moving ion beams 2 are aimed at an accumulated substance 1 placed in a unit chamber. Where, A+s show ions and A a deposit. Energy beams 3 (for example, electron beams, laser beams or the like) are aimed at the ion beams 2 with a previously decided relation to the aiming position to the accumulated substance 1 of the ion beams 2. An accumulating layer 5 formed by accumulating the ions of the ion beams 2 when the energy beams 3 are irradiated is not only annealed or melted but also promotes accumulation by activating the layer 5 and an accumulating layer with good crystal can be obtained.

Description

Detailed Description of the Invention Ion beam deposition method K11tゐ〇 The conventional ion beam deposition method uses the Ij11a electron beam of the present invention and the energy beam of the laser beam to deposit the ions of the ion beam on the object to be deposited. Relatively small diameter (
7.5 amφ or less) is moved relative to the ion beam, and while neutralizing the positive charge of the ion beam, a film of a certain element or metal compound is deposited on the object. At this time, it was a pile of stone with good texture,
In other words, in order to obtain a deposit with material transportability, the deposit must have a small crystal defect density in a crystalline pigeon house, and be dense in an amorphous pigeon house. It was not difficult to heat the deposited body during deposition. However, for the purpose of large quantities of Imamaro, Okuchi 11 (more than 1 Gamφ)
When using a material to be deposited, it is possible to heat the material to a high temperature of over 700 degrees Celsius with a uniform temperature distribution of 1K without causing thermal strain on the material to be deposited, and it has sufficient durability for practical use. There is no mechanism for moving a deposited object that has a suitable electrical connection for applying an ion acceleration voltage to the deposited object. Therefore, in the case of a large-diameter deposited body, deposition is carried out at a certain insufficient temperature to reduce the salt properties of nine elements or compounds to 1.
In order to perform rounding or re-melting/re-solidifying the electrolytic layer after deposition, once the object to be deposited has been kicked out of the ion beam deposition area, the object to be deposited is viewed as 9, and then the electron beam is applied. The deposited elemental metal alloy must be placed in an annealing or melting processing device to cause annealing or melting of the deposited elemental metal. It is not necessary to prepare d or extract separately, but this provides the basis for the intervention of cormorant impurities, so even if the 4kk of the above-mentioned Ryoho Kogyo is a clean l1, when looking at the Ryojoori process as a whole. In this case, it is no longer a clean l1. In addition, since the above two steps are separated, not only the positive charge of the electron beam is neutralized, which is not utilized at all, but also the activation of the solid surface and the deposition Functions other than the heating characteristic of the electron beam that promotes ion beam ion deposition are not effective at all in the deposition of ions.The same is true when using a single laser beam as the energy beam.
It is dangerous that the four functions other than heating are being used.

Reihatsu@shaThis was invented by addressing the drawbacks of the conventional equipment as mentioned above, and its purpose is to effectively utilize the four functions of energy beams other than heating for ion beam ion deposition, and to Deposit it in the evening! - It is an object of the present invention to provide an improved ion beam deposition method in which ion beam deposition can be performed in an atmosphere.

Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a diagram illustrating the method of the present invention in a first solid state, in which the ion beam 2 is moved relative to nine deposited objects IK placed in a single tilter (not shown); FIG. For example, if the ion beam 2 is stationary), the object to be deposited 1 moves to the left as shown by the arrow in the drawing.
move. In the figure, ``mu'' indicates ions and ``mu'' indicates deposits.

The electron beam 3 is irradiated with the energy II (hereinafter referred to as the electron beam) for this ion beam in a predetermined relationship and the irradiation position of the ion beam 2 on the deposited object 1 with a predetermined relationship. do.

This predetermined major relationship welfare Figure 2 0 (2-1'), (2
As shown in -4) and (2-3)K, the electron beam 3 is irradiated with the ion beam 2 in advance of, at the same time as, or following. The electron beam irradiated in this way may be in a pulse format or in an eleven or continuous format. Also, electron beam 3
It is preferable that the electron beam 3 has a size that allows the irradiation surface to overlap with the irradiation surface of the ion beam 2. In addition, the power of the electron beam 3 should be set so that the power of the electron beam 3 is sufficient for annealing the deposit and melting, which will be described later. The value must be sufficient to produce an effect. In addition, when it is necessary to prevent the electrostatic potential of the ion beam 2 from acting on the electron beam 3, which is susceptible to the influence of the electrostatic field, Ka, the electron beam 3 is irradiated with a predetermined irradiation Wt.
A drift tube 4 is arranged relative to the electron beam 3 to ensure drifting.

When the electron beam 3 as described above is irradiated, the ions of the ion beam 2 are deposited and the deposited layer S is not simply annealed or melted, but the deposited layer 5 is activated. In addition to accelerating the deposition and obtaining a surface deposited layer with good crystallinity, even if the object 1 to be deposited is made of an insulating material, the accumulation of charges (
There is no charge-up), and the deposited layer 5 can be successfully formed on the insulating deposited body l.

Furthermore, since the above deposition is performed in a single chamber, the steps from deposition to annealing or melting KIjAt can be performed in a clean atmosphere.

Therefore, no defects caused by the intervention of impurities occur.

Further, according to the method of the present invention, crystal growth can be caused locally at arbitrary positions on the conductor wafer. With such local treatment, even if distortion occurs there, it can be recovered without adversely affecting the ninth circumference 8, where the distorted snow area is minute. The distortion exerted on is small.

Further, since the position of the hot spot in the current and voltage values of the ion beam and electron beam can be accurately controlled, the above-mentioned effects can be achieved with good controllability. Because of this good controllability, the spot size of the electron beam 3 is not constant, but
It is also possible to change the ratio of covering the irradiation surface of the ion beam 2 by changing the size.

(3-1) and (3-2) in FIG. 3 are obtained by the method of the present invention.
1j) This is a specific example of manufacturing an 80I structure. (3-1) in FIG.
io□ layer 6, and I! 110. The ion beam 9 and the electron beam 3 are irradiated on the mold @ $ 8 formed in 5TA7 company sto, 46, where there is an 81 layer 7 under the layer 6, and the 81 deposited layer 10 is formed from the exposed part of the 81 layer 7. This is an example of growth and formation. 11 is a drift tube. (3-2) in FIG. 3 shows an example similar to (3-1) in FIG. 3, in which the object to be deposited is the sapphire layer 12 shown in FIG.

Moreover, as examples of 10 objects to be deposited, 81. G., Ga.

As, Mut, po, etc., mixed crystal Mu40s -510t a
``sN* is #), while an example of a deposited layer is 81.G.
In addition to @, Ga, and S, mixed crystal ALz05 + 11%02
m 815N$ 1m z4s, Gap available.

In summary, the single INK provides the following effects.

■ Is energy rays being used to activate deposition? , especially when the energy beam is an electron beam,
Ion Beam Deposition OII Accumulated charges can be neutralized by an electron beam, which not only allows for smooth deposition but also facilitates deposition on insulators.

(2) A crystalline deposited layer can be formed by the above activation.

(2) The steps from deposition to annealing X-ray melting can be carried out in a clean atmosphere. Therefore,
There is no room for impurities to intervene.

■ Arbitrary m of the general deposit body oj6's! can be grown into crystals. In this way, even if distortion occurs locally, rI! Since the time is 1 ms, the strain imparted to the object to be deposited, such as a wafer, is small.

(2) The heating mechanism for annealing and melting can be easily converted to AT.

A simple illustration of the 411th page is shown in Figure 1 for explaining the method of the present invention, and (2) in Figure 2.
-1), (2-2), and (2-3) are diagrams showing the positional relationship between the ion beam spot and the electron beam spot.
(3-1) and (3-2) of Il are 410I@II
This is a clear diagram of 012 when the method of the present invention is applied to.

In the figure, 1 is a deposition object, 2 is an ion beam, and 3 is an electron beam.

Patent applicant: Fujitsu Limited Figure 1 Figure 2

Claims (1)

[Scope of Claims] 1) An electron beam is irradiated with an ion beam moving relative to an object to be deposited placed in a single Champal at a predetermined positional relationship with respect to the irradiation position on the object to be deposited. Therefore, an ion beam deposition method 02 in which an energy beam of laser beam 5, etc. is irradiated onto the deposited body and the ions of the ion beam □ are deposited on the deposited body. )
2. The ion beam deposition method according to claim 1, wherein the ion beam and energy beam are applied on the object to be deposited. 3) The ion beam deposition method according to claim 1, wherein the irradiation position of the ion beam on the object to be deposited precedes the irradiation position of the energy beam. 4) The ion beam deposition method according to claim 1, characterized in that the irradiation position of the ion beam on the object to be deposited is shaped so as to follow the irradiation position of the energy beam. ) The ion beam deposition method according to claim 1, wherein the region irradiated with the ion beam includes the region irradiated with the energy beam.