JPS5837689B2 - hand tai souchi no seizou houhou - Google Patents

hand tai souchi no seizou houhou

Info

Publication number
JPS5837689B2
JPS5837689B2 JP50138460A JP13846075A JPS5837689B2 JP S5837689 B2 JPS5837689 B2 JP S5837689B2 JP 50138460 A JP50138460 A JP 50138460A JP 13846075 A JP13846075 A JP 13846075A JP S5837689 B2 JPS5837689 B2 JP S5837689B2
Authority
JP
Japan
Prior art keywords
substrate
hole
seizou
souchi
houhou
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50138460A
Other languages
Japanese (ja)
Other versions
JPS5261966A (en
Inventor
興光 安田
庄治 円谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP50138460A priority Critical patent/JPS5837689B2/en
Publication of JPS5261966A publication Critical patent/JPS5261966A/en
Publication of JPS5837689B2 publication Critical patent/JPS5837689B2/en
Expired legal-status Critical Current

Links

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  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置の製造方法に係わり、特に半導体基
板に感光樹脂を回転塗布法によって塗布する工程の改良
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to an improvement in the process of coating a semiconductor substrate with a photosensitive resin by a spin coating method.

半導体装置の製造に際しては半導体基板の酸化工程、拡
散工程等で起る結晶的歪を抑制するため、1た光食刻工
程において半導体基板の表面に塗布された感光樹脂から
放出されるガスを裏側に排気するために第1図a,bに
示すように半導体基板1の中央部に透孔2を穿設する場
合が多い。
When manufacturing semiconductor devices, in order to suppress crystal distortion that occurs during the oxidation process, diffusion process, etc. of the semiconductor substrate, gas released from the photosensitive resin coated on the surface of the semiconductor substrate in the first photoetching process is removed from the back side. In order to exhaust the air, a through hole 2 is often formed in the center of the semiconductor substrate 1, as shown in FIGS. 1a and 1b.

との透孔の大きさは所望によって決められるが、上記の
効果を得るには約0.5mmφ以上の有効面積が必要と
されている。
Although the size of the through hole is determined according to desire, an effective area of about 0.5 mmφ or more is required to obtain the above effect.

しかしながら、このような透孔付半導体基板を用いた場
合に、光食刻工程で感光樹脂液を基板に塗布するとき、
との透孔の有効面積を小さくしたり、これを塞いだりし
てその効果を低下させることがしばしばある。
However, when using such a semiconductor substrate with through holes, when applying a photosensitive resin liquid to the substrate in the photolithography process,
It is often the case that the effective area of the through hole is reduced or blocked, reducing its effectiveness.

1た透孔を通じて感光樹脂液が基板の裏面に回り込み基
板の平面度が失われて微細パターンの食刻に支障をきた
すおそれがある。
There is a risk that the photosensitive resin liquid will flow around to the back surface of the substrate through the through holes, causing loss of flatness of the substrate and interfering with etching of fine patterns.

このような透孔は半導体基板に感光樹脂液を塗布するに
は一般に回転塗布法が用いられているので、以下これに
適する回転塗布装置の一例について第2図を参照して説
明する。
Since a spin coating method is generally used to coat such a through hole with a photosensitive resin liquid on a semiconductor substrate, an example of a spin coating apparatus suitable for this will be described below with reference to FIG. 2.

中央部に透孔2を有する半導体基板1を吸着支持する吸
着口3を有する頭部4と、この吸着口を真空源に連通さ
せる通気路5を有する回転筒部6からなる回転チャック
にむいて、上記透孔を囲み基板に接合する内側通気部7
を上記吸着口内に設け、真空源に接続された通気路に連
通させるように構成されている。
A rotary chuck consisting of a head 4 having a suction port 3 for suctioning and supporting a semiconductor substrate 1 having a through hole 2 in the center, and a rotary cylindrical portion 6 having an air passage 5 for communicating this suction port with a vacuum source. , an inner ventilation section 7 surrounding the through hole and bonded to the substrate;
is provided in the suction port and is configured to communicate with a ventilation path connected to a vacuum source.

このように構成された回転チャックでは透孔付半導体基
板が吸着口に吸着されると同時に透孔より空気が吹い込
!れるようになる。
In the rotary chuck configured in this way, the semiconductor substrate with through holes is sucked into the suction port, and at the same time air is blown through the through holes! You will be able to do it.

この状態で基板の中央部である透孔に感光樹脂液8を滴
下すると、その液滴は図示のようにその中央部が透孔を
通じて吸い込1れて孔開き形となり、透孔はその面積を
狭められたり、塞がれたりすることはなく々るが、その
際吸い込1れた部分の一部が基板の裏面に回り込み、基
板の平面度を損ない、微細なパターンの食刻形或に支障
をきたすむそれがあった。
In this state, when photosensitive resin liquid 8 is dropped into the through hole at the center of the substrate, the center of the droplet is sucked through the through hole and becomes an open hole, as shown in the figure. Although the area is not narrowed or blocked, part of the suctioned portion wraps around the back side of the board, impairing the flatness of the board, and causing minute etched or blocked patterns. There was something that was causing problems.

そこで透孔の断面形状と基板の裏面に回り込む感光樹脂
の量との関係について研究を重ねたところ次のようZ結
果が認められた。
Therefore, after repeated research on the relationship between the cross-sectional shape of the through hole and the amount of photosensitive resin that wraps around the back surface of the substrate, the following Z results were found.

すなわち第3図に示すように透孔の内側面と基板の裏面
とのなす角θを変化させるとき回り込み量も変化するの
であって、θが鋭角のaのような場合は回り込みがある
が、θを鈍角としたb,cのような場合には回り込みは
見られなかった。
That is, as shown in FIG. 3, when the angle θ between the inner surface of the through hole and the back surface of the substrate is changed, the amount of wraparound also changes, and when θ is an acute angle such as a, wraparound occurs. No wraparound was observed in cases b and c where θ was an obtuse angle.

θの鈍角のものとしては図示のものに限られ々いのはい
う1でもない。
The obtuse angle θ is not limited to the one shown in the drawings.

上記より明らかなように、本発明に釦いてa半導体基板
の透孔をその内側面と基板裏面とのなす角が鈍角となる
ように形成することにより、感光樹脂の回転塗布作業に
おける基板裏面への感光樹脂の回り込みが防止され、パ
ターンの食刻形或作業が順調に行なわれるので、信頼性
の高い半導体装置の製造が可能となる。
As is clear from the above, in the present invention, by forming the through hole in the semiconductor substrate so that the angle between the inner surface and the back surface of the substrate is an obtuse angle, Since the photosensitive resin is prevented from going around and the pattern etching process is carried out smoothly, highly reliable semiconductor devices can be manufactured.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,bは中央部に透孔を有する半導体基板の平面
図、断面図、第2図は透孔付半導体基板に感光樹脂を塗
布するに適する回転塗布装置の縦断面図、第3図a,b
,cは半導体基板に穿設した透孔の形状を示す基板断面
図である。 1・・・・・・半導体基板、2・・・・・・透孔、3・
・・・・・吸着口、4・・・・・・頭部、5・・・・・
・通気路、6・・・・・・回転筒部、7・・・・・・内
部通気路、8・・・・・・感光樹脂。
1A and 1B are a plan view and a sectional view of a semiconductor substrate having a through hole in the center, FIG. Diagrams a, b
, c are substrate cross-sectional views showing the shapes of through holes drilled in the semiconductor substrate. 1...Semiconductor substrate, 2...Through hole, 3.
...Suction port, 4...Head, 5...
- Ventilation path, 6...Rotating tube section, 7...Internal ventilation path, 8...Photosensitive resin.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体基板の中央部に穿設した透孔の内側面と上記
基板の裏面とのなす角を鈍角ならしめて上記基板の表面
に感光樹脂を回転塗布法によって塗布する工程を含むこ
とを特徴とする半導体装置の製造方法。
1. It is characterized by including the step of applying a photosensitive resin to the surface of the substrate by a spin coating method by forming an obtuse angle between the inner surface of a through hole formed in the center of the semiconductor substrate and the back surface of the substrate. A method for manufacturing a semiconductor device.
JP50138460A 1975-11-18 1975-11-18 hand tai souchi no seizou houhou Expired JPS5837689B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50138460A JPS5837689B2 (en) 1975-11-18 1975-11-18 hand tai souchi no seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50138460A JPS5837689B2 (en) 1975-11-18 1975-11-18 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS5261966A JPS5261966A (en) 1977-05-21
JPS5837689B2 true JPS5837689B2 (en) 1983-08-18

Family

ID=15222530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50138460A Expired JPS5837689B2 (en) 1975-11-18 1975-11-18 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS5837689B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190129683A (en) * 2017-03-22 2019-11-20 소니 세미컨덕터 솔루션즈 가부시키가이샤 Imaging Device and Signal Processing Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190129683A (en) * 2017-03-22 2019-11-20 소니 세미컨덕터 솔루션즈 가부시키가이샤 Imaging Device and Signal Processing Device

Also Published As

Publication number Publication date
JPS5261966A (en) 1977-05-21

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