JPS5842003A - Polarizing plate - Google Patents

Polarizing plate

Info

Publication number
JPS5842003A
JPS5842003A JP56140756A JP14075681A JPS5842003A JP S5842003 A JPS5842003 A JP S5842003A JP 56140756 A JP56140756 A JP 56140756A JP 14075681 A JP14075681 A JP 14075681A JP S5842003 A JPS5842003 A JP S5842003A
Authority
JP
Japan
Prior art keywords
substrate
polarizing plate
grating
film
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56140756A
Other languages
Japanese (ja)
Inventor
Shigeru Oikawa
及川 茂
Toshiaki Tamamura
敏昭 玉村
Hiroshi Murase
村瀬 啓
Bunjiro Tsujiyama
辻山 文治郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56140756A priority Critical patent/JPS5842003A/en
Publication of JPS5842003A publication Critical patent/JPS5842003A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain a transmissive or reflective polaring plate for display, by forming a minute conductive grating pattern on a transparent or semitransparent substrate through an insulating layer and setting grating intervals of the conductive grating pattern to <=1.4mum. CONSTITUTION:Cr is vacuum-deposited onto a silicon substrate 2 whose surface is coated with a silicon oxide, and Au is vapor-deposited onto Cr. A resist film is provided on this substrate 2, and a pattern is exposed, and a conductive grating 1 is obtained by sputter etching. The line width of the grating is 0.15mum, and the pitch is 0.4mum. Thus, a reflective polarizing plate having 1/10 extinction ratio is obtained. If an Au grating pattern 1 is provided on the glass substrate 2 and the grating intervals are set to 0.63m and 1.4m, a transmissive polaring plate having 1/10 and 1/30 extinction ratios are obtained. If an Si2N3 film is stuck to one face by the CVD method, a reflective polarizing plate having ruggedness is obtained. A transparent protection film 3 may be formed by providing the conductive grating 1 on the thin film substrate 2.

Description

【発明の詳細な説明】 本発明は例えば液晶表示装置等に用いられ、透過形はも
ちろん、反射形も可能てToシ、かつ波長特性が平坦で
薄膜化が可能な偏光板に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polarizing plate that can be used in, for example, a liquid crystal display device, and can be of a transmissive type as well as a reflective type, has flat wavelength characteristics, and can be made into a thin film.

従来、偏光板としては0機屈折結晶を用いたニコルプリ
ズム、ダラムトムソンプリズムなど、あるいは■沃紮ン
含むポリビニルアルコール(PVA ’)延伸フィルム
、■2色性色紫を含むノラスチ、クフィルムを延伸した
もの、などが使われていた。
Conventionally, polarizing plates have been used such as Nicol prisms and Durham-Thomson prisms that use zero-order refraction crystals, or stretched films of polyvinyl alcohol (PVA') containing iodine, and stretched films of Norastik and PVA' that contain a dichroic color purple. and so on were used.

しかし、ながら、■の方法では、偏光特性の入射角依存
性が大きく、小形化が難しいこと、経済性に劣ること、
■・■において緯そう大損失が大きく、また波長帯域が
限られていること、更に■においては耐湿性に劣る欠点
を有していた。
However, in method (2), the polarization characteristics are highly dependent on the angle of incidence, making it difficult to miniaturize, and being less economical.
In the case of ■ and ■, the weft loss was large and the wavelength band was limited, and in the case of ■, the moisture resistance was poor.

本発明は、これらの欠点を解決するために、微細な′導
電格子を用いることで偏光板を作製しようとするもので
あシ、以下実施例にしたがって詳細に説明する。
In order to solve these drawbacks, the present invention attempts to manufacture a polarizing plate by using a fine conductive grating, and will be described in detail below with reference to Examples.

沃素−PVA嫉伸フィルムによる偏光の原理は、以下の
通りとされている。PVA中で沃素は錯体を形成し、延
伸方向に平行な直線状の導電部が形成される・このフィ
ルムに垂直に光が入射スると延伸方向と一致する電界成
分を持つ光はフィルム内に電流を誘起し、ジーール熱を
発生するために吸収されてしまう。一方延伸方向と垂直
な偏光成分を持つ光は、電流を誘起することが−できな
いため、吸収されずに透過してしまう。
The principle of polarization by the iodine-PVA stretched film is as follows. Iodine forms a complex in PVA, forming a linear conductive part parallel to the stretching direction. When light is incident perpendicularly to this film, the light with an electric field component that coincides with the stretching direction is generated within the film. It is absorbed to induce an electric current and generate Zeel heat. On the other hand, light having a polarization component perpendicular to the stretching direction cannot induce an electric current and is therefore transmitted without being absorbed.

二色性色素の場合も一般に分子が細長くなっておシ、こ
の長軸方向に微視的な電流が流れるのであるから、偏光
の原理は、沃素−PVAフィルムの場合と同様である。
In the case of dichroic dyes as well, the molecules are generally elongated and a microscopic current flows in the direction of this long axis, so the principle of polarization is the same as in the case of iodine-PVA film.

したがりて做細な導電格子・9タンは、上記偏光フィル
ムをモデル化したものと考えられ、同様な偏光作用を持
つことが期待できる。
Therefore, the tiny conductive grating 9Tan is considered to be a model of the polarizing film described above, and is expected to have a similar polarizing effect.

格子の巾およびピッチ、特にピッチは使用する光の波長
帯よシも小さいヒとが必要である。
The width and pitch of the grating, especially the pitch, must be as small as the wavelength band of the light used.

ピッチが波長よ〉大きい時は′回折格子としての作用が
強くなる。したがりて可視光領゛域で使う偏光板として
は格子のピッチは0.4μm以下、望ましくは0.2−
以下、さらに望ましくFio、o4μmυ下であること
が好ましい。近年、盛んになっている光通信の領域では
使用波長帯が、1.4μm帯となっているが、こめ領域
で用いるには1.4μm以下、望ましく蝶0.7μm以
下、更にIMましくは0.j4μm以下であることが必
要である。
When the pitch is larger than the wavelength, its action as a diffraction grating becomes stronger. Therefore, for a polarizing plate used in the visible light region, the grating pitch should be 0.4 μm or less, preferably 0.2-μm or less.
Hereinafter, it is more preferable that Fio is less than o4 μmυ. In the field of optical communication, which has become popular in recent years, the wavelength band used is the 1.4 μm band, but for use in the field, it is less than 1.4 μm, preferably less than 0.7 μm, and more preferably IM or less. 0. j It is necessary that it is 4 μm or less.

金属格子による偏光板は、すでに遠赤外領域では、回折
格子の!ラスチッ、クレプリカに、金属を斜め蒸着する
ことで°実現されている。しかしながら、この方法では
基板に回折格子状のものを用いているため、透過光の波
面が乱れること、またピッチを充分に小さ、くできない
ため近赤外、あるいは可視光領域では用いられない。
Polarizing plates with metal gratings can already be used in the far-infrared region as diffraction gratings! This is achieved by diagonally depositing metal onto a plastic replica. However, since this method uses a diffraction grating for the substrate, the wavefront of transmitted light is disturbed, and the pitch cannot be made sufficiently small, so it cannot be used in the near-infrared or visible light region.

1μml[Iあるいは、これより微細なピッチの格子は
、電子mまたはX線リソグラ2イ、あるいは特殊な方法
として、極短波長光を用いた干渉法を用いたリングラフ
ィによシ可能である。
Gratings with a pitch of 1 .mu.ml or finer can be produced by electron or X-ray lithography, or, as a special method, by phosphorography using interferometry using extremely short wavelength light.

導電格子材料としては通常の金輌、金、アルミニウム、
銀、クロムなどの他、カーがン蒸着膜が使用てきる。
Conductive grid materials include ordinary gold, gold, aluminum,
In addition to silver, chromium, etc., carbon vapor deposited films can be used.

基板としては通常の透明材料として、ガラス板、石英板
、NaC1板、KCl板など、不透明基板としては、金
、銀ζ銅、鉄、などの金属板、あるいけグラファイト板
、あるいはシリコン、ダルマニウムなどの半導体基板が
用いられる。
Substrates can be made of ordinary transparent materials such as glass plates, quartz plates, NaCl plates, KCl plates, etc.; opaque substrates can be made of metal plates such as gold, silver/copper, iron, graphite plates, silicon, or dalmanium. Semiconductor substrates such as

不透明基板、特に金属、グラファイト板は、それ自体が
導電性を持っているので、絶縁性保賎膜を介して、導電
格子を作る必要がある。
Since opaque substrates, particularly metal and graphite plates, are conductive themselves, it is necessary to create a conductive grid through an insulating film.

透明基板を用いた場合は、透過形、反射形の両方に、不
透明基板を用いた時には反射形として用いられ為。
When using a transparent substrate, it can be used for both transmissive and reflective types, and when using an opaque substrate, it can be used for reflective type.

第1図は、表面が平坦な基板の上に作製した導電性格子
の例であFt、s#i導電格子、2は基板である。これ
を作るには、基板2上に金属薄膜、あるいはカーーン薄
膜を蒸着、あるいはメ、キなどKより作製し、レジスト
を塗付し、−子線、X#、あるいは極紫外線を露光した
彼、現像しこのレジストパタンを保IIJliとして、
工、チングを行い、最終的にレジストを除去することK
よシ導電格子lを作製する。電子線の場合には細く絞っ
たI−ムを走査して露光できるが、X1!!の場合は電
子線を用いて作製したマスクを介して露光する。極紫外
線の場合は、光源としてレーず光を用いて干渉法によっ
て側光することによって微細ノ臂タン奢作製するととが
できる。極紫外のレーザは現在開発されていないので、
YAGレーザなどの高調波を使用する。
FIG. 1 shows an example of a conductive grating fabricated on a substrate with a flat surface. Ft, s#i conductive grating, 2 is the substrate. To make this, a metal thin film or a Kahn thin film is deposited on the substrate 2, or made using a method such as a metal or a metal, coated with a resist, and exposed to ultraviolet light, X#, or extreme ultraviolet light. Develop and save this resist pattern as
process, etch, and finally remove the resist.
A highly conductive grid l is produced. In the case of an electron beam, exposure can be performed by scanning a narrowly focused I-m, but X1! ! In this case, exposure is performed through a mask made using an electron beam. In the case of extreme ultraviolet rays, it is possible to produce minute armpits by using laser light as a light source and side-lighting by interferometry. As extreme ultraviolet lasers have not yet been developed,
Uses harmonics such as YAG laser.

第2図は凹凸を持った導電格子パタンの例である。1は
導電格子、2/ri基板である。これを作るには、基板
上にレジストを塗付し、第1図に示す例と同じように、
露光現像し、この上に金属を蒸着するか、あらかじめ、
凹凸を持った断面形状の基板を作製しておき、加熱して
おいてグラスチ、り基板上に押し付ける仁とで表面形状
を転写することで達成できる。レジストを用いた場合は
、このあと溶剤Kfi!L、てレゾストを除去すれば、
いわゆるリフトオフ法となり第1図と同じ形状にするこ
とも可能である。
FIG. 2 is an example of a conductive grid pattern with unevenness. 1 is a conductive grid and 2/ri substrate. To make this, apply a resist onto the substrate and use the same method as the example shown in Figure 1.
Either expose and develop and then vapor-deposit metal on top of it, or
This can be achieved by preparing a substrate with an uneven cross-sectional shape, heating it, and then transferring the surface shape using a grating or a sheet of paper that is pressed onto the substrate. If a resist is used, then use the solvent Kfi! L, if you remove the resist,
It is also possible to use the so-called lift-off method to form the same shape as in FIG.

蒸着を真上から行えば第2図のような形状になるが、斜
めから蒸着すれば凸部だ妙に′#着されるととKなる。
If the vapor deposition is performed from directly above, the shape shown in Figure 2 will be obtained, but if the vapor deposition is performed from an angle, the convex portions will be strangely deposited.

導電部は凸部、凹部のいずれか、あるいは双方に設けら
れても良いが、それぞ糺が連続せずKM立していること
が必要である。第3図のように基板2の凸部がアンダカ
ットになっている場合は真上からの蒸着で導電格子1を
形成しても良いが、第2図のようにアンダカットがない
か、逆に基部がふくれている場合には斜め蒸着が好まし
い。
The conductive portion may be provided in either the convex portion or the concave portion, or both, but it is necessary that the adhesive is not continuous and is KM standing. If the convex portion of the substrate 2 is undercut as shown in Fig. 3, the conductive grid 1 may be formed by vapor deposition from directly above, but if there is no undercut as shown in Fig. 2, or the conductive grid 1 is If the base is swollen, oblique deposition is preferred.

レジスFを露光する時の光源としてX線、あるいは極紫
外線を用いた場合は、基板は厚くと4良い。しかしなが
ら電子線を用いた場合KFi、基板から、電子線が散乱
されて、レゾスト中に再びはいるため、高解倫度の加工
は困難となる。
When X-rays or extreme ultraviolet rays are used as a light source when exposing the resist F, the substrate should be thicker. However, when an electron beam is used, the electron beam is scattered from the KFi and the substrate and reenters the resist, making it difficult to process with high resolution.

この問題を避けるためには薄膜状の基板を用いれば嵐い
、iI膜基板を用いた時は、電子線の後方散tはなくな
シ、ピッチ間隔の極めて狭い格子を作製することができ
る。薄膜基板用材料としては、通常の有機薄膜あるいは
シリコンウェハ上に窒化シリコンを作製し、後からシリ
コンをエツチングして取り除いたもの勾、どを用いるこ
とができる番薄膜基板の厚さ仁τ士は、1μm以下、好
オしくは0.5励以下が良い。電子線による加工は現状
で厚膜基板で0,4珈程度であるが薄膜基板では約1桁
微細な加工が可能である。
In order to avoid this problem, it is possible to use a thin film substrate. When an iI film substrate is used, there is no back scattering t of the electron beam, and a grating with an extremely narrow pitch interval can be produced. Thin film substrate materials that can be used include ordinary organic thin films or silicon nitride fabricated on a silicon wafer and the silicon removed by etching. , 1 μm or less, preferably 0.5 μm or less. At present, electron beam processing is about 0.4 beams for thick film substrates, but it is possible to process thin film substrates about one order of magnitude finer.

以上のようにして作製した偏光板は、その壕までは、機
械的強度に劣シ、また汚れ劣化などにより特性が変化す
るので、第4図のように透明なプラスチックあるいは無
機薄膜岬の透明保@6!でコーティングするヒとが好ま
しい。コーティングの効果は単に保睦だけでなく透過光
線の波面の乱れを防ぐ効果を持っている。また薄膜基板
を用いた場合は強度が弱いため、これを補強する効果を
持っている。
The polarizing plate produced as described above has poor mechanical strength up to the trenches, and its properties change due to dirt and deterioration, so as shown in Figure 4, transparent plastic or inorganic thin film capes are used to protect the polarizing plate. @6! Preferably, it is coated with aluminum. The effect of the coating is not only to protect the skin, but also to prevent disturbances in the wavefront of transmitted light. Furthermore, since the strength is weak when a thin film substrate is used, this has the effect of reinforcing this.

以上述べた偏光板は多層化することで消光比を向上する
ことができる。また、この場合各層のピッチを広くして
も第5図に示すように全体としてのピッチを狭くするこ
とができるため、製造技術上の困難さが軽減される。特
に電子線リングラフィを用いて基板加工を行う場合、孤
立パタンの作製は容易であるが、ピッチの細いAlタン
の作製は困難であるという欠点を持っているため、多層
化の方法は有効である。各層のピッチは、単層に比べ層
数倍にすることができる。倒し、格子の巾は、単層の場
合に比べて広くすることはできず、各層の格子パタンの
巾は0、7μmυ下である。
The extinction ratio of the polarizing plate described above can be improved by multilayering it. Further, in this case, even if the pitch of each layer is widened, the pitch as a whole can be narrowed as shown in FIG. 5, so that the difficulties in manufacturing technology are reduced. In particular, when substrate processing is performed using electron beam phosphorography, it is easy to create isolated patterns, but it has the disadvantage that it is difficult to create thin-pitch Al layers, so multilayer methods are not effective. be. The pitch of each layer can be multiplied by the number of layers compared to a single layer. In contrast, the width of the grid cannot be made wider than in the case of a single layer, and the width of the grid pattern of each layer is less than 0.7 μmυ.

(実施例1) 酸化シリコンを表面にコートしたシリコン基板上に約1
00X厚のクロム、次いで1500X厚の金を真空蒸着
した。クロムは基板と金のロロメチル化ポリーa−メチ
ルスチレン(aM−CN3と略称)をスピンコードし、
135℃で30分間ノリベークしてから電子ビームで露
光したのち、アセトンで現曹、イソプロノ°譬ノールで
リンスした。このあと、50Wの出力でアルゴンガスス
パッタエツチングを10−’Torrで10分間行い、
金のエツチングを行い、線巾0.15−、ピッチ0.4
趣の格子を作製した。辷れはH・−N・レーデの波長(
0,634m )で消光比l/10  の反射属偏光板
となった。
(Example 1) Approximately 1
00X thick chromium was vacuum deposited followed by 1500X thick gold. Chromium spin-coded the substrate and gold lolomethylated poly-a-methylstyrene (abbreviated as aM-CN3);
After baking at 135° C. for 30 minutes and exposing it to an electron beam, it was rinsed with acetone and isopropyl alcohol. After this, argon gas sputter etching was performed at 10-'Torr for 10 minutes with an output of 50W.
Perform gold etching, line width 0.15-, pitch 0.4
I made an interesting grid. The slippage is the wavelength of H・-N・Rede (
0,634 m), resulting in a reflective polarizing plate with an extinction ratio of 1/10.

(実施例2) 芝 酸化シリコン膜付ψタリコン基板上に実施例1と同様1
00X厚のクロムと1500芙厚の金を真空蒸着したー
この上にホトレジス)AZ−2415(シブレイ社#)
を子0001スピンコードし、95℃、30升グリベー
クした。
(Example 2) Same as Example 1, 1
AZ-2415 (Sibley #)
The sample was spin-coded as 0001 and baked at 95°C for 30 liters.

コレにYAGレーザの第9次高調波を二本にわけ、基板
上に異なる角度で照射し、干渉ノ々タンを発生させ、露
光した。現像はAZ2401現像液(シフレ4社製)を
脱イオン水で175に希釈して行い、更に脱イオン水で
リンスした。その後、実施例1と同様にアルデンスI4
ツタエツチングで加工し一金の格子ノ4タンを作製した
。格子間隔は0,16μm1ピツチは0,33μm1面
−往10−角である。消光比は0.63 srsの波長
で11/10が得られた。
The 9th harmonic of the YAG laser was divided into two beams, and the substrate was irradiated at different angles to generate interference waves and exposed. Development was carried out by diluting AZ2401 developer (manufactured by Shifure 4 Co., Ltd.) to 175% with deionized water, followed by rinsing with deionized water. After that, as in Example 1, Ardens I4
I processed it using ivy etching to create a solid gold lattice plate. The lattice spacing is 0.16 .mu.m, and one pitch is 0.33 .mu.m, with 10 squares in each direction. An extinction ratio of 11/10 was obtained at a wavelength of 0.63 srs.

(実施例3) ガラス基板上に実施例1と同様な方法で金の格子ノ苛タ
ンを作製した。消光比は透過形で杓であった。
(Example 3) A gold lattice plate was produced on a glass substrate in the same manner as in Example 1. The extinction ratio was the same for the transmission type.

(実施例4) 実施例3の偏光板の上に厚さ100018102の膜を
蒸着し、さらに同様の導電格子パタンを作製した。消光
比は透過形で1/100であった。
(Example 4) A film having a thickness of 100018102 mm was deposited on the polarizing plate of Example 3, and a similar conductive grid pattern was also produced. The extinction ratio was 1/100 in the transmission type.

(実施例5) 厚さ400μmのシリコン基板上に減圧CVD法で10
001の窒化シリコン膜を片面に付着させ、反対飼から
ホトレジス、トを用い5m角の窓を作製し、40嘔KO
H!I*”t’70℃で4時間エツチングし、窒化シリ
コン薄膜の窓を有するシリコン基板を作製した。仁れに
クロム100X。
(Example 5) 100 μm was deposited on a silicon substrate with a thickness of 400 μm using a low pressure CVD method.
A silicon nitride film of 001 was attached to one side, and a 5 m square window was made using photoresist from the opposite side.
H! Etching was performed at 70°C for 4 hours to produce a silicon substrate with a silicon nitride thin film window.The groove was coated with chromium 100X.

金500Xを蒸着したのち電子線レジストPMMムを1
0001−塗付し、50Xの口径を持った電子ビームを
加速電圧50 kVで無光した。
After evaporating gold 500X, electron beam resist PMM was applied.
0001- was coated, and an electron beam having an aperture of 50X was applied without light at an accelerating voltage of 50 kV.

メチルイソブチルケトンーイソグロビルアルコール1:
1溶液で現像したのち、イングロビルアルコールテリン
スシタ、アルがンスパツタエッチによシ金を工、チング
した。得られた格子の寸法は巾200X、ピッチ400
Xであう九。
Methyl isobutyl ketone-isoglobil alcohol 1:
After developing with 1 solution, the gold was processed and etched using Inglobil alcohol solution and aluminum spatuta etch. The dimensions of the obtained grid are width 200X and pitch 400
Nine met by X.

この偏光板は、波長4000Xで消光比1/30となっ
た。
This polarizing plate had an extinction ratio of 1/30 at a wavelength of 4000X.

以上説明したように本発明による偏光板枠、薄膜化が可
能であり、また透過形はもちろん反射型にすることもで
き、耐湿、耐熱性に優れる利点があり、表示用、各at
芥生学測定用るいは光通信部品用として好適である。
As explained above, the polarizing plate frame according to the present invention can be made into a thin film, can be made into a reflective type as well as a transmission type, and has the advantage of being excellent in moisture resistance and heat resistance.
Suitable for use in biomedical measurements or optical communication parts.

【図面の簡単な説明】[Brief explanation of the drawing]

第1M〜第5図はそれぞれ本発明の実施例を示し、第1
図は表面が平坦な基板上に作製した偏光板、第2図は凹
凸のある基板上に作製した偏光板、第3図は、アンダカ
、トのある凹凸基板上に作製しfc偏光板、第4図は保
験層を設けた偏光板、第5゛図は多層化した偏光板であ
る。 1・・・導電格子、2・・・基板、3・・・透明保睦膜
。 第1図 第2図 第3図 第4図 第5図
1M to 5 each show an embodiment of the present invention.
The figure shows a polarizing plate fabricated on a substrate with a flat surface, FIG. Figure 4 shows a polarizing plate provided with a protection layer, and Figure 5 shows a multilayered polarizing plate. DESCRIPTION OF SYMBOLS 1... Conductive grid, 2... Substrate, 3... Transparent protective film. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5

Claims (1)

【特許請求の範囲】 (1)  基板上に微細導電格子・母タンが形成されて
いることを%徴とする偏光板。 (2、特許請求の範囲第1項記載の偏光板において、基
板として透明基板を用いることを特徴とする透過形の偏
光板。 (3)特許請求の範囲第1項記載の偏光板において、基
板として不透明基板を用いることを特徴とする反射形の
偏光板。゛ (4)特許請求の勅、囲第1項記載の偏光板において、
基板として薄膜基板を用いることを特徴とする偏光板。 (5)薄膜基板の厚さが1μm以下であることを特徴と
する特許請求の範囲第4項記載の偏光板。 (6)特許請求の範囲第1項記載の偏光板において、基
板として凹凸部を有する基板を用い、該基板の凹部ある
いは凸部のいずれかあるいは両方に金属ノ母タンが形成
されていることを特徴〜 とする偏光板。 (7)特許請求の範囲第1項記載の偏光板において、微
細導電格子・リン白格子間隔が1.4μm以下であるこ
とを特徴とすi偏光板。 (8)微細導電格子ノ4タン上に透明保護膜を有するこ
とを特徴とする特許請求の範囲第1項記載の偏光板。 (9)基板上に微細導電格子ノ4タンが形成され該パタ
ン上に透明保護膜が形成された偏光板上に1さらに微細
導電格子パタンと透明保護膜が、多数回層状に重ねられ
ていることを特徴とする偏光板。 (ト)特許請求の範囲第9項記載の偏光板において、各
一層の微細導電格子パタンの巾が0.7μm以下てあり
、ピッチが1.4×層数以下であることを特徴とする偏
光板。
[Scope of Claims] (1) A polarizing plate characterized by a fine conductive lattice/matrix formed on a substrate. (2. The polarizing plate according to claim 1, which is a transmissive type polarizing plate, characterized in that a transparent substrate is used as the substrate. (3) The polarizing plate according to claim 1, in which the substrate is A reflective polarizing plate characterized in that an opaque substrate is used as the polarizing plate.
A polarizing plate characterized by using a thin film substrate as a substrate. (5) The polarizing plate according to claim 4, wherein the thin film substrate has a thickness of 1 μm or less. (6) In the polarizing plate according to claim 1, a substrate having an uneven portion is used as the substrate, and a metal matrix is formed on either or both of the recesses and the projections of the substrate. Features: Polarizing plate. (7) An i-polarizing plate according to claim 1, characterized in that the fine conductive lattice/phosphorescent lattice spacing is 1.4 μm or less. (8) The polarizing plate according to claim 1, further comprising a transparent protective film on the fine conductive grid. (9) A fine conductive grid pattern is formed on the substrate, and a transparent protective film is formed on the polarizing plate, and a fine conductive grid pattern and a transparent protective film are layered many times on top of the polarizing plate. A polarizing plate characterized by: (g) In the polarizing plate according to claim 9, the width of each layer of fine conductive grid pattern is 0.7 μm or less, and the pitch is 1.4×number of layers or less. Board.
JP56140756A 1981-09-07 1981-09-07 Polarizing plate Pending JPS5842003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56140756A JPS5842003A (en) 1981-09-07 1981-09-07 Polarizing plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56140756A JPS5842003A (en) 1981-09-07 1981-09-07 Polarizing plate

Publications (1)

Publication Number Publication Date
JPS5842003A true JPS5842003A (en) 1983-03-11

Family

ID=15276001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56140756A Pending JPS5842003A (en) 1981-09-07 1981-09-07 Polarizing plate

Country Status (1)

Country Link
JP (1) JPS5842003A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211402A (en) * 1984-04-04 1985-10-23 Tokai Rika Co Ltd Light direction limiting plate
JPH0212023A (en) * 1988-06-30 1990-01-17 Sanyo Electric Co Ltd Infrared-ray control element and infrared-ray detector using same
EP0282086A3 (en) * 1987-03-12 1990-04-25 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Polarizing mirror for optical radiation
JPH0384502A (en) * 1989-08-29 1991-04-10 Shimadzu Corp Grid polarizer
EP0612068A3 (en) * 1993-02-16 1995-12-06 Nec Corp Optical head device and birefringent diffraction grating polarizer and polarizing hologram element used therein.
WO1996025683A1 (en) * 1995-02-16 1996-08-22 Tokin Corporation Optical isolator
WO1998044368A1 (en) * 1997-03-29 1998-10-08 Shojiro Kawakami Three-dimensional periodical structure, its manufacturing method, and method of manufacturing film
US6251297B1 (en) * 1997-12-22 2001-06-26 Tdk Corporation Method of manufacturing polarizing plate
WO2002091044A1 (en) * 2001-04-26 2002-11-14 Nippon Sheet Glass Co., Ltd. Polarizing device, and method for manufacturing the same
JP2003502708A (en) * 1999-06-22 2003-01-21 モックステック Broadband wire grid polarizer for the visible spectrum
JP2003519818A (en) * 2000-01-11 2003-06-24 モックステック Embedded wire grid polarizer for the visible spectrum
JP2008304919A (en) * 2001-03-29 2008-12-18 Seiko Epson Corp Optical equipment using polarizers
JP2009500665A (en) * 2005-07-08 2009-01-08 グラウ,ギュンター Method of forming a polarizing filter, application to a polarization sensitive photosensor, and reproducing apparatus for generating polarized light
EP2264492A4 (en) * 2008-04-08 2011-08-31 Asahi Glass Co Ltd METHOD FOR MANUFACTURING A METALLIC GRID POLARIZER
EP2128667A4 (en) * 2007-02-27 2012-02-01 Zeon Corp Grid polarizer
JP2015222258A (en) * 2011-10-31 2015-12-10 日本精工株式会社 Manufacturing method of optical sensor
US9632223B2 (en) 2013-10-24 2017-04-25 Moxtek, Inc. Wire grid polarizer with side region

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211402A (en) * 1984-04-04 1985-10-23 Tokai Rika Co Ltd Light direction limiting plate
EP0282086A3 (en) * 1987-03-12 1990-04-25 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Polarizing mirror for optical radiation
JPH0212023A (en) * 1988-06-30 1990-01-17 Sanyo Electric Co Ltd Infrared-ray control element and infrared-ray detector using same
JPH0384502A (en) * 1989-08-29 1991-04-10 Shimadzu Corp Grid polarizer
EP0612068A3 (en) * 1993-02-16 1995-12-06 Nec Corp Optical head device and birefringent diffraction grating polarizer and polarizing hologram element used therein.
WO1996025683A1 (en) * 1995-02-16 1996-08-22 Tokin Corporation Optical isolator
US5757538A (en) * 1995-02-16 1998-05-26 Tokin Corporation Optical isolator
WO1998044368A1 (en) * 1997-03-29 1998-10-08 Shojiro Kawakami Three-dimensional periodical structure, its manufacturing method, and method of manufacturing film
US6852203B1 (en) 1997-03-29 2005-02-08 Autocloning Technology, Ltd Three-dimensional periodical structure, its manufacturing method, and method of manufacturing film
US6251297B1 (en) * 1997-12-22 2001-06-26 Tdk Corporation Method of manufacturing polarizing plate
JP2003502708A (en) * 1999-06-22 2003-01-21 モックステック Broadband wire grid polarizer for the visible spectrum
JP2011065183A (en) * 1999-06-22 2011-03-31 Moxtek Inc Broadband wire grid polarizer for visible spectrum
JP2011141574A (en) * 1999-06-22 2011-07-21 Moxtek Inc Broadband wire grid polarizer for visible spectrum
JP2003519818A (en) * 2000-01-11 2003-06-24 モックステック Embedded wire grid polarizer for the visible spectrum
JP2008304919A (en) * 2001-03-29 2008-12-18 Seiko Epson Corp Optical equipment using polarizers
WO2002091044A1 (en) * 2001-04-26 2002-11-14 Nippon Sheet Glass Co., Ltd. Polarizing device, and method for manufacturing the same
JP2009500665A (en) * 2005-07-08 2009-01-08 グラウ,ギュンター Method of forming a polarizing filter, application to a polarization sensitive photosensor, and reproducing apparatus for generating polarized light
EP2128667A4 (en) * 2007-02-27 2012-02-01 Zeon Corp Grid polarizer
EP2264492A4 (en) * 2008-04-08 2011-08-31 Asahi Glass Co Ltd METHOD FOR MANUFACTURING A METALLIC GRID POLARIZER
US8445058B2 (en) 2008-04-08 2013-05-21 Asahi Glass Company, Limited Process for producing wire-grid polarizer
JP2015222258A (en) * 2011-10-31 2015-12-10 日本精工株式会社 Manufacturing method of optical sensor
US9726560B2 (en) 2011-10-31 2017-08-08 Nsk Ltd. Optical sensor, method for manufacturing optical sensor, optical encoder, torque detection apparatus, and electric power steering apparatus
US9632223B2 (en) 2013-10-24 2017-04-25 Moxtek, Inc. Wire grid polarizer with side region

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