JPS5843581A - りん化ガリウム多結晶の製造方法 - Google Patents

りん化ガリウム多結晶の製造方法

Info

Publication number
JPS5843581A
JPS5843581A JP56141296A JP14129681A JPS5843581A JP S5843581 A JPS5843581 A JP S5843581A JP 56141296 A JP56141296 A JP 56141296A JP 14129681 A JP14129681 A JP 14129681A JP S5843581 A JPS5843581 A JP S5843581A
Authority
JP
Japan
Prior art keywords
reduction
hydrogen
reaction
gallium
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56141296A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252945B2 (fr
Inventor
Masayuki Watanabe
正幸 渡辺
Jisaburo Ushizawa
牛沢　次三郎
Tsuguo Fukuda
承生 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56141296A priority Critical patent/JPS5843581A/ja
Priority to US06/336,701 priority patent/US4431476A/en
Priority to EP82100073A priority patent/EP0056586B1/fr
Priority to DE8282100073T priority patent/DE3260469D1/de
Priority to PL1982234725A priority patent/PL137175B1/pl
Priority to DD82236800A priority patent/DD207938A5/de
Publication of JPS5843581A publication Critical patent/JPS5843581A/ja
Publication of JPS6252945B2 publication Critical patent/JPS6252945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP56141296A 1981-01-17 1981-09-08 りん化ガリウム多結晶の製造方法 Granted JPS5843581A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56141296A JPS5843581A (ja) 1981-09-08 1981-09-08 りん化ガリウム多結晶の製造方法
US06/336,701 US4431476A (en) 1981-01-17 1982-01-04 Method for manufacturing gallium phosphide single crystals
EP82100073A EP0056586B1 (fr) 1981-01-17 1982-01-07 Procédé de fabrication de monocristaux en phosphure de gallium
DE8282100073T DE3260469D1 (en) 1981-01-17 1982-01-07 Method for manufacturing gallium phosphide single crystals
PL1982234725A PL137175B1 (en) 1981-01-17 1982-01-15 Method of obtaining monocrystals of galium phosphide
DD82236800A DD207938A5 (de) 1981-01-17 1982-01-15 Verfahren zur herstellung von galliumphosphid-einkristallen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141296A JPS5843581A (ja) 1981-09-08 1981-09-08 りん化ガリウム多結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS5843581A true JPS5843581A (ja) 1983-03-14
JPS6252945B2 JPS6252945B2 (fr) 1987-11-07

Family

ID=15288577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141296A Granted JPS5843581A (ja) 1981-01-17 1981-09-08 りん化ガリウム多結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS5843581A (fr)

Also Published As

Publication number Publication date
JPS6252945B2 (fr) 1987-11-07

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