JPS5844725A - 半導体シリコン基板の製造方法 - Google Patents

半導体シリコン基板の製造方法

Info

Publication number
JPS5844725A
JPS5844725A JP56142335A JP14233581A JPS5844725A JP S5844725 A JPS5844725 A JP S5844725A JP 56142335 A JP56142335 A JP 56142335A JP 14233581 A JP14233581 A JP 14233581A JP S5844725 A JPS5844725 A JP S5844725A
Authority
JP
Japan
Prior art keywords
hold time
wafer
silicon substrate
mirror
finished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56142335A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319687B2 (sr
Inventor
Nobuyuki Akiyama
信之 秋山
Mitsuo Kono
光雄 河野
Ryusuke Oota
太田　竜介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP56142335A priority Critical patent/JPS5844725A/ja
Publication of JPS5844725A publication Critical patent/JPS5844725A/ja
Publication of JPH0319687B2 publication Critical patent/JPH0319687B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
JP56142335A 1981-09-11 1981-09-11 半導体シリコン基板の製造方法 Granted JPS5844725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56142335A JPS5844725A (ja) 1981-09-11 1981-09-11 半導体シリコン基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56142335A JPS5844725A (ja) 1981-09-11 1981-09-11 半導体シリコン基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5844725A true JPS5844725A (ja) 1983-03-15
JPH0319687B2 JPH0319687B2 (sr) 1991-03-15

Family

ID=15312958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56142335A Granted JPS5844725A (ja) 1981-09-11 1981-09-11 半導体シリコン基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5844725A (sr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313544A (ja) * 1989-06-09 1991-01-22 Nippon Steel Corp 高Ｍｎ非磁性鉄筋棒鋼の製造方法
JPH03295235A (ja) * 1990-04-12 1991-12-26 Toshiba Corp エピタキシャルウェーハの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5572091B2 (ja) 2008-08-08 2014-08-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313544A (ja) * 1989-06-09 1991-01-22 Nippon Steel Corp 高Ｍｎ非磁性鉄筋棒鋼の製造方法
JPH03295235A (ja) * 1990-04-12 1991-12-26 Toshiba Corp エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
JPH0319687B2 (sr) 1991-03-15

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