JPS5849949A - Electrophotographic receptor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photoreceptor, and more particularly to an electrophotographic photoreceptor that can be custom-made for development.

Conventionally, as a photoreceptor used for Atsuko photography, a functionally separated photoreceptor is known which has good sensitivity even to long wavelength light such as a semiconductor laser as a source for light.
As shown in the figure, the loaded transport layer 1 (aθ), the m load generation layer 2 (
8eTe), 4dL sex magazine board 3. 5 on the front side
Since the eTe layer 2 is made to have a higher Te1i to improve the light sensitivity, the resistance value of this 8eTe layer 2 is lower, and the current bias voltage is effectively added to this 5eTe, 1492. is not sufficiently attached to the surface of the 8eTe layer 2, resulting in clear reproduction 11! j1M! ! was not obtained.

The present invention has been developed to address this problem, and provides a clear reproduced image with excellent 3A image quality! ! An object of the present invention is to provide an electrophotographic photoreceptor that provides the following characteristics.

Preferred embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 2 is a block diagram of one example of pain according to the present invention, in which the same # parts as in FIG. 1 are given the same symbols. In FIG. 2, the reference is the second charge transport layer (insulating layer).

This increase in insulation gain occurs when the resistance is high so that the bias voltage can be effectively applied during the current operation. It is essential that both the former carriers, electrons and holes, be transported efficiently. A material that satisfies these requirements has good energy matching at the interface with the underlying 8eTe layer, has nearly the same electron and hole transport properties, and is sensitive to short wavelength light (wavelength of 550 μm or less). On the other hand, selenium (6e), which has an excellent ability to generate nine charges, is suitable for moths to marry.

FIGS. 3(a) and 3(b) show B, which is the material of the insulating layer 4, respectively.
It shows the photobleaching properties of the e-material layer under positive and negative corona charging. It is clear from the figure that both positive and negative polarities have the same photoconductivity, which means that electrons,
This shows that it has the ability to effectively transport both holes and holes.

Figure 8g4 shows the layer thickness dependence of the half-reduced exposure sensitivity of the insulating layer weight, and the subscript number indicates the layer thickness of the insulating layer 4. As is clear from the figure, when the layer thickness is 5 μm or less, He-N.

If the layer thickness is less than 10 μm, the 4-photosensitive armpit for the semiconductor laser beam will be almost completely lost.Using the photoreceptor shown in FIG. As is clear from the above explanation, the photoreceptor for electrophotography according to the present invention has a high quality reproduced image with no background smear as a result of performing reversal development with negative 111 yen. The charge retention function of the surface layer of the photoconductor to which electricity is applied is superior, and the electrical charges are well preserved on the surface of the insulating layer, which is the first layer of the photoconductor. It is possible to perform reversal development, which reduces optical fatigue of the photoreceptor and shortens the light emission time of the laser light source, which has the advantage of stabilizing repeatability and extending life. .

[Brief explanation of the drawing]

Fig. 1 is a diagram showing the configuration of a conventional photoreceptor, Fig. 2 is a diagram showing the composition of one embodiment of the present invention, and Fig. 3 (ta) and (b) show light under positive and negative corona charging of the selenium layer. Diagram showing wage reduction characteristics, 4th
The figure is a diagram showing the layer thickness dependence of the half-reduced four-photosensitivity of the insulating layer.

Claims (2)

[Claims] (1) In an electrophotographic photoreceptor in which a @l charge transport layer and charge generation layer are laminated on a conductive substrate. A photoreceptor for electrophotography, which is patented in that a second load-transfer layer is provided on the load-completed layer, and only the photosensitive area is electrically conductive at the time of serving. (2) The loading support layer of item 1@1 is formed of selenium (8e), the former m11 charge generation l- is contained in selenium telluride (SθTe), and the second 'unloading layer' is formed of selenium (SθTe). The characteristic i4'F-target range (1st) is made of selenium.
) Electrophotographic photoreceptor written in the soul.