JPS58500683A - 閾値変更可能半導体メモリ−装置 - Google Patents

閾値変更可能半導体メモリ−装置

Info

Publication number: JPS58500683A
Authority: JP; Japan
Prior art keywords: oxide; nitride; memory; charge; current
Prior art date: 1981-05-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP57501921A

Other languages

English (en)

Japanese (ja)

Inventor

トウピツチ・ジエイムズ・アンソニ−

Original Assignee

エヌ・シ−・ア−ル・コ−ポレ−シヨン

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-05-11

Filing date

1982-05-07

Publication date

1983-04-28

1982-05-07 Application filed by エヌ・シ−・ア−ル・コ−ポレ−シヨン filed Critical エヌ・シ−・ア−ル・コ−ポレ−シヨン

1983-04-28 Publication of JPS58500683A publication Critical patent/JPS58500683A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 19
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
229910052581 Si3N4 Inorganic materials 0.000 claims description 26
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
239000000758 substrate Substances 0.000 claims description 20
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
229910052710 silicon Inorganic materials 0.000 claims description 11
239000010703 silicon Substances 0.000 claims description 11
229910052814 silicon oxide Inorganic materials 0.000 claims description 11
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
230000003647 oxidation Effects 0.000 claims description 8
238000007254 oxidation reaction Methods 0.000 claims description 8
229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
150000004767 nitrides Chemical class 0.000 description 58
210000004027 cell Anatomy 0.000 description 26
230000005684 electric field Effects 0.000 description 20
238000010586 diagram Methods 0.000 description 16
238000009825 accumulation Methods 0.000 description 14
230000000694 effects Effects 0.000 description 11
229920005591 polysilicon Polymers 0.000 description 10
230000005641 tunneling Effects 0.000 description 10
230000014759 maintenance of location Effects 0.000 description 9
235000012239 silicon dioxide Nutrition 0.000 description 9
239000000377 silicon dioxide Substances 0.000 description 9
238000000034 method Methods 0.000 description 8
230000008859 change Effects 0.000 description 7
230000007423 decrease Effects 0.000 description 7
238000000151 deposition Methods 0.000 description 7
230000008021 deposition Effects 0.000 description 7
230000006870 function Effects 0.000 description 7
238000012546 transfer Methods 0.000 description 6
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 5
230000004888 barrier function Effects 0.000 description 5
239000001257 hydrogen Substances 0.000 description 5
229910052739 hydrogen Inorganic materials 0.000 description 5
238000003860 storage Methods 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
239000002800 charge carrier Substances 0.000 description 4
238000002347 injection Methods 0.000 description 4
239000007924 injection Substances 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
230000006399 behavior Effects 0.000 description 3
230000008901 benefit Effects 0.000 description 3
239000003990 capacitor Substances 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
230000005669 field effect Effects 0.000 description 3
238000012545 processing Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
230000009471 action Effects 0.000 description 2
238000000137 annealing Methods 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
238000000354 decomposition reaction Methods 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
238000002955 isolation Methods 0.000 description 2
238000011068 loading method Methods 0.000 description 2
230000007774 longterm Effects 0.000 description 2
238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
238000005036 potential barrier Methods 0.000 description 2
229920006395 saturated elastomer Polymers 0.000 description 2
210000002784 stomach Anatomy 0.000 description 2
241001279686 Allium moly Species 0.000 description 1
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
206010024229 Leprosy Diseases 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
230000001154 acute effect Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000637 aluminium metallisation Methods 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
238000013459 approach Methods 0.000 description 1
230000003542 behavioural effect Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000007599 discharging Methods 0.000 description 1
230000009977 dual effect Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
230000005055 memory storage Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
229910000069 nitrogen hydride Inorganic materials 0.000 description 1
239000001272 nitrous oxide Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000002787 reinforcement Effects 0.000 description 1
230000008439 repair process Effects 0.000 description 1
230000004044 response Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
210000003537 structural cell Anatomy 0.000 description 1
238000010998 test method Methods 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

JP57501921A 1981-05-11 1982-05-07 閾値変更可能半導体メモリ−装置 Pending JPS58500683A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US26238081A	1981-05-11	1981-05-11
US262380FREGB		1981-05-11

Publications (1)

Publication Number	Publication Date
JPS58500683A true JPS58500683A (ja)	1983-04-28

Family

ID=22997252

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57501921A Pending JPS58500683A (ja)	1981-05-11	1982-05-07	閾値変更可能半導体メモリ−装置

Country Status (5)

Country	Link
EP (1)	EP0078318A4 (da)
JP (1)	JPS58500683A (da)
DK (1)	DK6283D0 (da)
WO (1)	WO1982004162A1 (da)
ZA (1)	ZA823251B (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59143331A (ja) *	1983-01-31	1984-08-16	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	半導体構造体
JP2755781B2 (ja) *	1990-04-23	1998-05-25	株式会社東芝	半導体記憶装置およびその製造方法
JPH0548115A (ja) *	1991-08-20	1993-02-26	Rohm Co Ltd	半導体不揮発性記憶装置
JP3635681B2 (ja) *	1994-07-15	2005-04-06	ソニー株式会社	バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US6265268B1 (en) *	1999-10-25	2001-07-24	Advanced Micro Devices, Inc.	High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6528845B1 (en) *	2000-07-14	2003-03-04	Lucent Technologies Inc.	Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
US6812517B2 (en)	2002-08-29	2004-11-02	Freescale Semiconductor, Inc.	Dielectric storage memory cell having high permittivity top dielectric and method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS49116982A (da) *	1973-12-14	1974-11-08

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA942641A (en) *	1970-05-25	1974-02-26	Rca Corporation	Semiconductor body of preselected surface potential
DE2723738C2 (de) *	1977-05-26	1984-11-08	Deutsche Itt Industries Gmbh, 7800 Freiburg	Halbleiterspeicherzelle für das nichtflüchtige Speichern elektrischer Ladung und Verfahren zu deren Programmierung
US4131902A (en) *	1977-09-30	1978-12-26	Westinghouse Electric Corp.	Novel bipolar transistor with a dual-dielectric tunnel emitter
US4249191A (en) *	1978-04-21	1981-02-03	Mcdonnell Douglas Corporation	Stripped nitride structure and process therefor
DE2832388C2 (de) *	1978-07-24	1986-08-14	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4242737A (en) *	1978-11-27	1980-12-30	Texas Instruments Incorporated	Non-volatile semiconductor memory elements
WO1981000790A1 (en) *	1979-09-13	1981-03-19	Ncr Co	Silicon gate non-volatile memory device
DE3032364C2 (de) *	1980-08-28	1987-11-12	Philips Patentverwaltung Gmbh, 2000 Hamburg	Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung

1982
- 1982-05-07 JP JP57501921A patent/JPS58500683A/ja active Pending
- 1982-05-07 WO PCT/US1982/000600 patent/WO1982004162A1/en not_active Ceased
- 1982-05-07 EP EP19820901890 patent/EP0078318A4/en not_active Withdrawn
- 1982-05-11 ZA ZA823251A patent/ZA823251B/xx unknown
1983
- 1983-01-10 DK DK0062/83A patent/DK6283D0/da not_active Application Discontinuation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS49116982A (da) *	1973-12-14	1974-11-08

Also Published As

Publication number	Publication date
DK6283A (da)	1983-01-10
WO1982004162A1 (en)	1982-11-25
EP0078318A1 (en)	1983-05-11
ZA823251B (en)	1983-03-30
EP0078318A4 (en)	1983-06-24
DK6283D0 (da)	1983-01-10

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