JPS5852479A - Vapor depositing device - Google Patents
Vapor depositing deviceInfo
- Publication number
- JPS5852479A JPS5852479A JP14782181A JP14782181A JPS5852479A JP S5852479 A JPS5852479 A JP S5852479A JP 14782181 A JP14782181 A JP 14782181A JP 14782181 A JP14782181 A JP 14782181A JP S5852479 A JPS5852479 A JP S5852479A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- sources
- source
- evaporation
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title abstract 7
- 238000001704 evaporation Methods 0.000 claims abstract description 90
- 238000007740 vapor deposition Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims description 87
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
異なる蒸着物質を各別に蒸発して一緒に蒸着する蒸着装
置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor deposition apparatus that evaporates different vapor deposition substances separately and deposits them together.
従来，上述のような蒸着装置は、特開＠ｑ一ｌｔ３９ダ
ｌ号公報により知られている。その装置は、蒸発温度の
異なるセレン、テルルのそれぞれの蒸発源を隣り合わせ
に設けて、それらの蒸気をＩｉｌり合わせのｇ４璧に近
寄せてそれぞれ蒸発源の上方に設けた開口から各別に放
出させ、それら開口の上方に位置する被蒸着体に混合蒸
着させるものである。この装置は、両蒸発源が完全に区
分されているので、高温蒸発側の蒸気が低温蒸発ＨＫ″
回って凝結するような問題を起すことなく、しかも両蒸
発源が隔壁を介して隣り合っているので、両蒸発源を離
したものより社それぞれの蒸気放出開口を近付けること
ができ、したがって、比較的良好な混合蒸着を得ること
ができる。しかし一方、この装置では、両蒸発源が隔壁
を介して隣９合っているので、高温蒸発源側の温度が低
温蒸発源側に影響して、温度差が太き一場合、特に１低
温蒸発源側の温度および蒸発の制御が難しくなり、一定
した混合比を迅速に安定して得ることが困難となる。Conventionally, the above-mentioned vapor deposition apparatus is known from Japanese Patent Application Laid-Open No. 39-1111. In this device, evaporation sources for selenium and tellurium, which have different evaporation temperatures, are installed next to each other, and the vapors are brought close to a parallel g4 wall and released separately from openings provided above the evaporation sources. , the mixed vapor deposition is carried out on the object to be vaporized located above these openings. In this device, both evaporation sources are completely separated, so the steam on the high-temperature evaporation side becomes the low-temperature evaporation source.
Since both evaporation sources are adjacent to each other with a partition wall between them without causing problems such as spinning and condensation, it is possible to bring the vapor release openings of each company closer together than if the evaporation sources were separated. A well-targeted mixed deposition can be obtained. However, in this device, both evaporation sources are adjacent to each other with a partition wall in between, so the temperature on the high-temperature evaporation source side affects the low-temperature evaporation source side, and when the temperature difference is large, especially one low-temperature evaporation source It becomes difficult to control the temperature and evaporation on the source side, making it difficult to quickly and stably obtain a constant mixing ratio.
また、それぞれの蒸気の放出開口が隔壁の両１１に分れ
ていることは、たとえ両方の開口を近付けても、均一な
混合を得るのに＠度があり、部分的な混合比の変動ある
いは層別蒸着の傾向が現われることを避けることができ
な−。In addition, the fact that each steam release opening is divided into two parts of the partition wall means that even if both openings are placed close to each other, it takes some time to obtain uniform mixing, and partial fluctuations in the mixing ratio or The tendency of layered deposition cannot be avoided.
本発明は、混合蒸着において、上述の問題の生ずること
の々い蒸着装置、すなわち、低温蒸発源が高温蒸発源の
影響を受けることなく温度および蒸発を制（資）され、
均一な混合比が得られて１層別蒸着することもない蒸着
装置を提供するものである。The present invention provides a vapor deposition apparatus in which the above-mentioned problems do not occur in mixed vapor deposition, that is, a low temperature evaporation source is controlled in temperature and evaporation without being affected by a high temperature evaporation source, and
It is an object of the present invention to provide a vapor deposition apparatus in which a uniform mixing ratio can be obtained and there is no need to perform vapor deposition for each layer.
本発明の蒸着装置は、それぞれ加熱源を有して互に蒸発
温度の異なる蒸着物質を収容する複数の蒸発源を備え、
それら蒸発源の上方に設けた開口から蒸着物質蒸気を放
出させて開口の上方にある被蒸着体に蒸着させる装置で
あって、高い蒸発温度の一発源が上方に、低い蒸発温度
の蒸発源がその下方罠配設されていることを特徴として
）す、かかる構成によって混合蒸着における前述の問題
を解消して−るのである。The vapor deposition apparatus of the present invention includes a plurality of evaporation sources each having a heating source and accommodating vapor deposition substances having different evaporation temperatures,
It is a device that releases vaporized material vapor from an opening provided above the evaporation sources and evaporates it onto the object to be evaporated above the opening. (characterized by its lower trap), such an arrangement eliminates the aforementioned problems in mixed deposition.
以下、本発明を図面に基づいて説明する。Hereinafter, the present invention will be explained based on the drawings.
第１図および第２図は本発明の蒸着装置の一例を示す要
部縦断側面図および部分平面図、第３図および第参図は
それぞれ他の例を示す縦断側面図、第３図は蒸着実施例
に用いた装置の縦断側面図であり、第１図乃至第１図は
いずれも蒸気発生放出部分を示している。1 and 2 are longitudinal sectional side views and partial plan views of main parts showing an example of the vapor deposition apparatus of the present invention, FIG. 3 and FIG. 3 are longitudinal sectional side views showing other examples, and FIG. 1 is a longitudinal sectional side view of the apparatus used in the example, and each of FIGS. 1 to 1 shows a steam generation and discharge portion.
図において、ｉ、ｉ’は高温蒸発源、コは低温蒸発源、
３は高温蒸発源／ 、 ／’の加熱源として内壁面に設
けた抵抗加熱体、参は低温蒸発源２の加熱源、参′は低
温蒸発源コの凝結防止用、あるいはさらに、高温蒸発＠
ｌ、ｔ’の補助加熱用の加熱源、ｊは高温蒸発源ｌの蒸
気放出開口、６は低温蒸発源コの蒸気放出開口、７は高
温蒸発源／、ｌ′と低温蒸発源２に共通の蒸気放出開口
、ｌは低温蒸発源λの突沸防止板、９は低温蒸発１１２
の温度制御用熱電対であ抄、第３図、第ダ図でも温度制
御用熱電対は用いられており、また図示してぃな−が、
高温蒸発源／、ｌ’に対してもそれぞれ温度制御用熱電
対は用いられ−て−る。。In the figure, i, i' are high-temperature evaporation sources, ko is low-temperature evaporation sources,
3 is a resistance heating element provided on the inner wall surface as a heating source for the high temperature evaporation sources /, /';
A heating source for auxiliary heating of 1 and t', j is a vapor discharge opening of high temperature evaporation source 1, 6 is a vapor discharge opening of low temperature evaporation source 7, and 7 is common to high temperature evaporation source/, l' and low temperature evaporation source 2. , l is the bumping prevention plate of the low temperature evaporation source λ, 9 is the low temperature evaporation 112
Temperature control thermocouples are also used in Figures 3 and 3, and are not shown in the figures.
Temperature control thermocouples are also used for the high temperature evaporation sources / and l'. .
本発明の蒸着装置は１図示のように、蒸発温度の高い蒸
着物質Ｈ，Ｈ’をそれぞれ収容する高温蒸発源側、７′
を、被蒸着体に近い上方に配置し、それら■、Ｈ′より
蒸発温度が低い蒸着物質りを収容する低温蒸発源コを、
高温蒸発源／、 、 ／’の下方に配置しているから、
高温蒸発源／ 、 ／’と低温蒸発１ｌｌ−の温度差が
大きくても、高温蒸発ｊｌ ｔ 、 ｔ’の温度が低温
蒸発Ｈコに殆んど影響せず、したがって、高温蒸発源／
、 ／’と低温蒸発源−を、それぞれ迅速正確に、温
度および蒸発制御することができる。そして、第１図に
見るように、高温蒸発源ｌと低温蒸発源２とを完全に区
分して、それぞれの蒸気放出開口ｊとｔを別個に設けた
場合には、低温蒸発Ｒ２の蒸気放出開口６を高温蒸発Ｉ
ＩＩＩｌの蒸気放出開口ｊを挾むように設けることがで
きるし、また、第３図および第参図に見るように、高温
蒸発源ｉ、ｉ’を低温蒸発源コの器壁内に設けたような
場合には、それらの蒸発源に共通に蒸気放出量ロアを設
けることができるから、極めて高い混合状態で混合比の
安定し先混合蒸着を可能にする。すなわち、本発明によ
れば、第３図、第ダ図に示し企ように、高温蒸発Ｒ／、
／’と低温蒸発源側の蒸気放出開口を共通にするようＫ
しても、高温蒸発源／ 、 ／’が共通の蒸気放出量ロ
アに近い位置を占めることＫなるから、高温蒸発Ｒ１，
／′からの蒸気は速かに低温蒸発源λかもの蒸気と共に
放出され、高温蒸発源／ 、 ／’からの蒸気が低温蒸
発源コ側で凝結するような問題を起すことはない。As shown in Figure 1, the vapor deposition apparatus of the present invention includes a high-temperature evaporation source side, 7', which accommodates vapor deposition substances H and H' each having a high evaporation temperature;
A low-temperature evaporation source containing a evaporation material having a lower evaporation temperature than H' is placed near and above the object to be evaporated.
Because it is located below the high temperature evaporation source /, , /',
Even if the temperature difference between the high-temperature evaporation source /, /' and the low-temperature evaporation 1l- is large, the temperature of the high-temperature evaporation jl t, t' has almost no effect on the low-temperature evaporation H, and therefore the high-temperature evaporation source /
, /' and low-temperature evaporation source can be quickly and precisely controlled for temperature and evaporation, respectively. As shown in FIG. 1, when the high temperature evaporation source l and the low temperature evaporation source 2 are completely separated and their respective vapor release openings j and t are provided separately, the vapor release of the low temperature evaporation R2 is High temperature evaporation I for opening 6
Alternatively, as shown in Fig. 3 and the reference figures, high-temperature evaporation sources i and i' can be provided in the wall of a low-temperature evaporation source. In this case, since a vapor release amount lower can be provided in common for these evaporation sources, the mixing ratio is stabilized in an extremely high mixing state, making it possible to perform pre-mixed evaporation. That is, according to the present invention, as shown in FIGS. 3 and 3, high-temperature evaporation R/,
/' and the vapor release opening on the low-temperature evaporation source side are the same.
Even if the high-temperature evaporation source / , /' occupies a position close to the common vapor emission lower, the high-temperature evaporation R1,
The steam from /' is quickly discharged together with the steam from the low temperature sources λ, without causing problems such as the steam from the high temperature sources / and /' condensing on the low temperature sources λ.
なお、第ダ図は、高温蒸発源／、／’の蒸着物質１（、
Ｈ’が同じ蒸発温度のものである場合も、それらの間に
多少の温度差がある場合も示している。In addition, Fig. D shows the vapor deposition material 1 (,
Both cases in which H' have the same evaporation temperature and cases in which there is some temperature difference are shown.
この第す図から類推されるように、蒸発温度の高ψ蒸着
物質に対して蒸発温度の低い蒸着物質が２ｍ類あって、
しかも、それらの間の温度差はそれ程大きくないような
場合は、例えば第３図で二点鎖線によ抄示したように１
隔壁を設けて低温蒸発源を２個設けてもよい。As can be inferred from this figure, there are 2m types of evaporation materials with low evaporation temperatures compared to ψ evaporation materials with high evaporation temperatures.
Moreover, if the temperature difference between them is not that large, for example, as shown by the two-dot chain line in Figure 3,
A partition wall may be provided to provide two low-temperature evaporation sources.
また、第１図に示したように、高温蒸発源ｌと低温蒸発
源コを完全に区分して、それぞれの蒸気放出開口よと６
が別個に設けられている場合、それら蒸気放出開口ｊ、
Ｇの方向を被蒸着体の表両、あるーはそれよりも手前で
交叉するように設けることは、混合を均一にする上で効
果がある。第１図の高温蒸発［／の蒸気放出開口ｊを挾
んで設けられた低温蒸発［コの蒸気放出開口ぶはそのよ
うか方向を向いている。In addition, as shown in Figure 1, the high-temperature evaporation source 1 and the low-temperature evaporation source 1 are completely separated, and each vapor release opening is 6.
are provided separately, the steam release openings j,
Providing the direction of G so that it intersects on both sides of the object to be deposited, or even in front of it, is effective in making the mixing uniform. The steam discharge openings in the low-temperature evaporator [J], which are provided between the steam discharge openings J in the high-temperature evaporator [/] in FIG. 1, are oriented in that direction.
なお、高温蒸発源と低温蒸発源を完全に区分した場合も
、第１図の例に限らず、低温蒸発源の蒸気放出口を高温
蒸発源の蒸気放出開口の片側だけに設けるようにしても
よい。その場合も、−蒸気放出開口の方向を交叉するよ
うにすることによって 。Note that even when the high-temperature evaporation source and the low-temperature evaporation source are completely separated, the steam discharge port of the low-temperature evaporation source may be provided only on one side of the steam discharge opening of the high-temperature evaporation source, not limited to the example shown in Figure 1. good. In that case too - by making the directions of the vapor release openings cross.
混合均一の効果を上げることができる。The effect of uniform mixing can be improved.
また、第１図は高温蒸発源ｌの蒸気放出開口ｊが円孔の
配列より）す、低温蒸発源コの蒸気放出開口≦がスリッ
ト状よりなる例を示しているが、それに限られるもので
はなく、被蒸着体の形状、あるいは被蒸着体が静止蒸着
されるのか、送り蒸着されるのか郷によっても、変更さ
れ得るものであることは勿論である。Furthermore, although FIG. 1 shows an example in which the vapor discharge openings j of the high-temperature evaporation source l are arranged in circular holes, the vapor discharge openings of the low-temperature evaporation source ≦ are slit-shaped, but the invention is not limited to this. Of course, it can be changed depending on the shape of the object to be vapor-deposited, or whether the object to be vapor-deposited is statically vapor-deposited or vapor-deposited by feeding.
実施例
第５図の蒸着装置すなわち、ペルジャーｌθ内の上方に
、回転軸／／ ［よって回転され、周囲の空隙ｌλに温
水が導入されて一定温度に保持されるドラム状基体１３
を配置し、その下方には、第１図に示した蒸気発生放出
部分を配置した蒸着装置を用い、ペルジャーｌｏ内は、
バルブ／４Ｉを設けた排気路１３を介して、図示しない
真空ポンプにより、／Ｉｆ”〜／ｆ’ ｔｏｒｒの真空
とし、蒸気発生放出部分のアンチモノを仕込んだ高温蒸
発源ｌは、その抵抗加熱体３にｌＯＯ〜コＯＯムの高電
流を流して、アンチモノをＳｔＯ℃で蒸発させ、セレン
を仕込んだ低温蒸発源コは、遠赤外ヒータの加熱源ａ
、ｌによりセレンを３００″Ｃで蒸発させた。ドラム状
基体／ＪＦｉアルミニウム製で、１５ｒｐｍで回転し、
７ｊ’Ｃ［保持された。そして、ドラム状基体１３０表
面ＫｔＯμの厚さでセレン・アセチレンの混合層を蒸着
し、感光体を得た。この感光体を小西六゛写真工業社製
複写機Ｕ−ＢｉｘＵに装着し、複写テストを行った結果
は、１０万回複写においても初回の複写と変らない高品
質の複写像を得ることができた。Embodiment A drum-shaped substrate 13 is mounted above the vapor deposition apparatus of FIG.
A vapor deposition apparatus was used below which the vapor generation and discharge part shown in Fig. 1 was arranged, and inside the Pelger lo,
A vacuum of /If'' to /f' torr is created by a vacuum pump (not shown) through an exhaust path 13 provided with a valve /4I, and the high temperature evaporation source l charged with anti-mono in the vapor generation and discharge portion is heated by its resistance heating element. The low-temperature evaporation source containing selenium is a heating source of a far-infrared heater.
, l was used to evaporate selenium at 300″C. Drum-shaped substrate/made of JFi aluminum, rotating at 15 rpm;
7j'C [Retained. Then, a mixed layer of selenium and acetylene was deposited on the surface of the drum-shaped substrate 130 to a thickness of KtOμ to obtain a photoreceptor. This photoreceptor was installed in a copying machine U-BixU manufactured by Roku Konishi Photo Industry Co., Ltd., and a copying test was conducted.The results showed that even after 100,000 copies, a high-quality copy image that was the same as the first copy could be obtained. Ta.
第１図および第２図は本発明の蒸着装置の一例を示す要
部縦断側面図および部分平面図、第３図および第ｖ図は
それぞれ他の例を示す縦断側面図、第５図は蒸着実施例
に用いた蒸着装置の縦断側面図である。
／、ｌ′・・・高温蒸発源、 コ・・・低温蒸発源、３
・・・抵抗加熱体、 １，４Ｚ’・・・加熱源、
ｊ、ｔ、７・・・蒸気放出開口、
！・・・突沸防止板、 ９・−・熱電対、１０・・
・ペルジャー、１３・・・ドラム基体、ｌり・・・パル
プｓ ／ｊ・・・排気路、Ｈ，Ｈ’、Ｌ・・・
蒸着物質。
特許出願人 小西六写真工業株式会社
第３図
第４図1 and 2 are longitudinal sectional side views and partial plan views of essential parts showing an example of the vapor deposition apparatus of the present invention, FIGS. 3 and 5 are longitudinal sectional side views showing other examples, and FIG. 5 is a vapor deposition apparatus. FIG. 3 is a longitudinal cross-sectional side view of a vapor deposition apparatus used in an example. /, l′...high temperature evaporation source, ko...low temperature evaporation source, 3
...resistance heating element, 1,4Z'...heating source,
j, t, 7...steam release opening, ! ...Bumping prevention plate, 9...Thermocouple, 10...
・Perger, 13...Drum base, L...Pulp s/j...Exhaust path, H, H', L...
Vapor deposition material. Patent applicant: Konishiroku Photo Industry Co., Ltd. Figure 3 Figure 4
Claims (1)
着物質を収容する複数の蒸発源を備え、それら蒸発源の
上方に設けた開口から蒸着物質蒸気を放出させて開口の
上方にある被蒸着体に蒸着させる装置であって、高−蒸
発温度の蒸発源が上方に、低い蒸発温＊０蒸発源がその
下方に配設されていることを特徴とする蒸着装置。 ２ 前記開口が前記複数の蒸発ｆｆ１Ｋ−ｚ−で共通で
ある特許請求の範囲第１現記戦の蒸着装置。 五 前記開口が前記複数の蒸発源のそれぞれについて設
けられてお９、且つ、それらが互いに近接している特許
請求の範囲第１１［記載の蒸着装置。 ４ 前記ＩＩ数の蒸発源のそれぞれにつ−で設けられた
開口の方向が互いに交叉する方向に向つでいる特許請求
の範囲第３項記載の蒸着装置。 ５ 低い蒸発温度の蒸発源についての開口が高い蒸発温
度の蒸発源についての開口を挾むように設けられている
特許請求の範囲第５項または第４項記載の蒸着装置。[Claims] 1. A plurality of evaporation sources each having a heating source and accommodating evaporation materials having different evaporation temperatures are provided, and the evaporation material vapor is released from an opening provided above the evaporation sources. A vapor deposition apparatus that performs vapor deposition on an object to be vaporized above an opening, characterized in that an evaporation source with a high evaporation temperature is provided above and an evaporation source with a low evaporation temperature *0 is provided below. . 2. The vapor deposition apparatus according to claim 1, wherein the opening is common to the plurality of evaporators ff1K-z-. 5. The vapor deposition apparatus according to claim 11, wherein the opening is provided for each of the plurality of evaporation sources, and the openings are close to each other. 4. The vapor deposition apparatus according to claim 3, wherein the openings provided in each of the II number of evaporation sources face in directions that intersect with each other. 5. The vapor deposition apparatus according to claim 5 or 4, wherein the opening for the evaporation source having a low evaporation temperature is provided so as to sandwich the opening for the evaporation source having a high evaporation temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14782181A JPS5915986B2 (en) | 1981-09-21 | 1981-09-21 | Vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14782181A JPS5915986B2 (en) | 1981-09-21 | 1981-09-21 | Vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5852479A true JPS5852479A (en) | 1983-03-28 |
| JPS5915986B2 JPS5915986B2 (en) | 1984-04-12 |
Family
ID=15438984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14782181A Expired JPS5915986B2 (en) | 1981-09-21 | 1981-09-21 | Vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5915986B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1010720A3 (en) * | 1996-10-30 | 1998-12-01 | Centre Rech Metallurgique | Method and device for the continuous coating of a substrate in movement by means of a metal alloy in vapour phase |
-
1981
- 1981-09-21 JP JP14782181A patent/JPS5915986B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1010720A3 (en) * | 1996-10-30 | 1998-12-01 | Centre Rech Metallurgique | Method and device for the continuous coating of a substrate in movement by means of a metal alloy in vapour phase |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5915986B2 (en) | 1984-04-12 |
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